T4-LDS-0295, Rev. 1 (130278) ©2013 Microsemi Corporation Page 1 of 5
1N4942 – 1N4946
Available on
commercial
versions
Voidless Hermetically Sealed
Fast Recovery Glass Rectifiers
Qualified per MIL-PRF-19500/359
Quali f i ed Lev els:
JAN, JAN TX,
and JANTXV
DESCRIPTION
Thi s Ser ies of industry recognized voidless, hermeti cally sealed fast r eco very gl ass rec tifiers
are mil i tary quali fied to M IL-PRF-19500/359 and are ideal for high-reliability ap plica tion s where
a failure cannot be t olerated. They provide a working peak r everse volt age s election from 200
to 600 Volts with a 1.0 amp current rating. They are ver y robust in hard-g l ass construction and
als o us e an intern al metallurgic al bond identified as "Categ or y 1" for high-reliability
applications. These devices are similar in ratings to the 1N5615 through 1N5619 seri es wher e
surfac e mount MELF package configu r ations are also available by adding a “U S” su ffix (see
separate d ata sheet s).
“A” Package
Important: For the latest information, visit our we bsit e http://www.microsemi.com.
FEATURES
• Popular JEDEC registered 1N4942 through 1N4946 number series.
• Voidless hermetically sealed glass package.
• Triple-layer passivation.
• Internal “Category 1 ” metallurgical bonds.
• Working peak reverse voltage 200 to 600 volts.
• JAN, JANTX, and JANTXV qualifications are available per M IL-PRF-19500/359.
• RoHS com pliant versions available (commercial grade only).
APPLICATIONS / BENE FITS
• Fast recovery 1 amp recti fiers 200 to 600 V.
• Military and other high reliability applications.
• General rectifier applications including bridges, half-bridges, catch diodes, etc.
• High forward surge current capability.
• Extremely robust construction.
• Low thermal construction.
• Controlled avalanche with peak power capability.
• Inherently radiation hard as described in Microsemi “Micr oNote 050 ”.
MAXIMUM RATINGS @ TA= 25 oC u nless otherwise sp ecified
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +175
oC
Thermal Resistance Junction-to-Lead
(Lead length = .375 in) also see Figure 1
RӨJL 38
o
C/W
Thermal Resistance @ 10 ms heating time
RӨJX
115
ºC/W
Average Rectified Forward Current @ TA = +55°C
@ TA = +100°C
IO 1.0
(1 ) (2 )
0.750
(2)
Amps
Working Peak Reverse Vol tage 1N4942
1N4944
1N4946
VRWM 200
400
600
V
Maximum Forward Surge Current
@ tp = 8.3 ms, IO = .750 A, TA = +55 ºC
I
FSM
15
Amps
Solder Temperature @ 10 s
TSP
260
oC
Notes: 1. Derate linearly from 1.0 A at TA = +5 5 °C to 0.75 A at +100 °C. Derate l inearly from 0.75 A to 0 A
between +100 °C and +175 °C.
2. For the 1 amp rating at 55 °C ambient or 0.75 amp rating at 100 °C ambient, these IO ratings are for
thermal (PC boards or other) mountin g methods where thermal resistance from m ounting point to
ambient is still sufficiently controlled where TJ(MAX) in 1.3 is not exceeded. This equates to RθJX
≤ 115 ºC/W as shown.
T4-LDS-0295, Rev. 1 (130278) ©2013 Microsemi Corporation Page 2 of 5
1N4942 – 1N4946
M ECHANICAL an d PACKAGING
• CASE: Hermetically seal ed voidless hard glass with tung sten slug s.
• TERMINALS: Tin/lead or RoHS compliant matte/tin (commercial grade only) over nickel plate over copper.
• MARKING: Body painted with part number.
• POLARITY: Cathode indicated by band.
• TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
• WEIGHT: Approximately 340 milligrams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 1N4942 (e3)
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
JEDEC type number
(See Electrical Characteristics
table)
SYMBOL S & DEFI NITIONS
Symbol
Definition
C
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
IR
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhi bit at a specified current.
V(BR)
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM
Working Peak Reverse Vol tage: The maximum peak voltage that can be applied over the operating temperature range
excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV.
C
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
ELECTRI CAL CHARACTERISTICS
TYPE
MAXIMUM
FORWARD
VOLTAGE
VFM
@ I FM = 1A
MINIMUM
BREAKDOWN
VOLTAGE
V(BR)
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
MAXIMUM
JUNCTION
CAPACITANCE
CJ @ VR = 12 V
MAXIMUM
REVERSE
RECOVERY
(NOTE 2)
trr
Volts
Volts
µA
pF
ns
25°C
150°C
25°C
150°C
1N4942
1N4944
1N4946
0.6 – 1.3
0.6 – 1.3
0.6 – 1.3
0.6 – 1.5
0.6 – 1.5
0.6 – 1.5
220
440
660
1.0
1.0
1.0
200
200
200
45
35
25
150
150
250
NOTE 1: TA = 100 °C, 8.3 ms surges
NOTE 2: IF = 0.5 A, IRM = 1 A, IR(REC) = 0.250 A
T4-LDS-0295, Rev. 1 (130278) ©2013 Microsemi Corporation Page 3 of 5
1N4942 – 1N4946
GRAPHS
Heating Time (sec)
FIGURE 1
Max i mum Th er mal Imped anc e
IO (A)
FIGURE 2
Rectifier Power vs IO (Average Forward Current)
Theta (oC/W)
P
O
(W)
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1N4942 – 1N4946
GRAPHS (continued)
P ad Area (s q in)
FIGURE 3
Thermal Resistance vs F R 4 Pad Ar ea At Ambient
PCB horizontal (for each pad) with 1, 2, and 3 oz copp er
VF (V)
FIGURE 4
Forward Volt age vs Forward Current
I
F
(V)
Thermal Resistance (oC/W)
T4-LDS-0295, Rev. 1 (130278) ©2013 Microsemi Corporation Page 5 of 5
1N4942 – 1N4946
PACKAGE DIM ENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters equivalents are given for general information only.
3. Dimension BD shall be measured at the largest diameter.
4. Dimension BL shall include the entire body including slugs and
sections of the lead over which the diameter is uncontrolled. This
uncontrolled area is defined as the zone between the edge of the
diode body and extending .050 inch (1.27 mm) onto the leads.
5. In accordance with ASME Y14.5M, diam eters are equivalent to Φx
symbology.
DIMENSIONS
Ltr
INCH
MILLIMETERS
Notes
Min
Max
Min
Max
BD
0.065
0.150
1.65
3.81
3, 4
BL
0.140
0.250
3.56
6.35
4
LD
0.027
0.033
0.69
0.84
LL
1.00
1.50
25.4
38.1