Parameter Max. Units
VDS Drain- Source Voltage 20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 7.0
ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 5.5 A
IDM Pulsed Drain Current 28
PD @TA = 25°C Power Dissipation 2.0
PD @TA = 70°C Power Dissipation1.3
Linear Derating Factor 16 mW/°C
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
07/09/08
Absolute Maximum Ratings
W
www.irf.com 1
IRF7331
HEXFET® Power MOSFET
VDSS RDS(on) max (mW) ID
20V 30@VGS = 4.5V 7.0A
45@VGS = 2.5V 5.6A
SO-8
These N-Channel HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Description
lUltra Low On-Resistance
lDual N-Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
45
6
7
Symbol Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead ––– 42
RθJA Junction-to-Ambient ––– 62.5 °C/W
Thermal Resistance
PD - 94225A
IRF7331
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 2.0A, VGS = 0V
trr Reverse Recovery Time ––– 31 47 ns TJ = 25°C, IF = 2.0A
Qrr Reverse Recovery Charge ––– 15 23 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
A
28



2.0

Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.013 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 30 VGS = 4.5V, ID = 7.0A
––– ––– 45 VGS = 2.5V, ID = 5.6A
VGS(th) Gate Threshold Voltage 0.6 ––– 1.2 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 14 ––– ––– S VDS = 10V, ID = 7.0A
––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V
QgTotal Gate Charge ––– 13 20 ID = 7.0A
Qgs Gate-to-Source Charge ––– 3.7 ––– nC VDS = 10V
Qgd Gate-to-Drain ("Miller") Charge ––– 2.1 ––– VGS = 4.5V
td(on) Turn-On Delay Time ––– 7.6 ––– VDD = 10V
trRise Time ––– 22 ––– ID = 1.0A
td(off) Turn-Off Delay Time ––– 110 ––– RG = 53Ω
tfFall Time ––– 50 ––– VGS = 4.5V
Ciss Input Capacitance ––– 1340 ––– VGS = 0V
Coss Output Capacitance ––– 170 ––– pF VDS = 16V
Crss Reverse Transfer Capacitance ––– 120 ––– ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
mΩ
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
S
D
G
IRF7331
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
1.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
1.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
1
10
100
1.5 2.0 2.5 3.0
V = 15V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
4.5V
7.0A
IRF7331
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
0 4 8 12 16 20
0
2
4
6
8
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D7.0A
V = 10V
DS
110 100
VDS, Drain-to-Source Voltage (V)
0
400
800
1200
1600
2000
2400
C, Capacitance(pF)
Coss
Crss
Ciss
VGS
= 0V, f = 1 MHZ
Ciss
= C
gs + C
gd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds
+ C
gd
0.1 1 10 100
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
IRF7331
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0.0
2.0
4.0
6.0
8.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
IRF7331
6www.irf.com
Fig 13. Typical On-Resistance Vs.
Drain Current
Fig 12. Typical On-Resistance Vs.
Gate Voltage
Fig 14b. Gate Charge Test Circuit
Fig 14a. Basic Gate Charge Waveform
QG
QGS QGD
VG
Charge
VGS
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
2.0 4.0 6.0 8.0
VGS, Gate -to -Source Voltage (V)
0.01
0.02
0.03
0.04
0.05
RDS(on), Drain-to -Source On Resistance (Ω)
ID = 7.0A
0 5 10 15 20 25 30
ID , Drain Current (A)
0.00
0.02
0.04
0.06
0.08
0.10
0.12
RDS (on) , Drain-to-Source On Resistance (Ω)
VGS = 4.5V
VGS = 2.5V
IRF7331
www.irf.com 7
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
Fig 16. Typical Power Vs. Time
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
VGS(th) Gate threshold Voltage (V)
ID = 250µA
0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000
Time (sec)
0
10
20
30
40
50
60
Power (W)
IRF7331
8www.irf.com
SO-8 Package Outline(Mosfet & Fetky)
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Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
IRF7331
www.irf.com 9
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2008
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/