©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
KST2907A
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
* Pulse T est: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
ICCollector Current -600 mA
PCCollector Power Dissipation 350 mW
TSTG Storage Temperature 150 °C
Symbol Parameter Test Condition Mi n. Max. Units
BVCBO Collector-Base Breakdown Voltage IC= -10µA, IE=0 -60 V
BVCEO * Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -60 V
BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V
ICBO Collector Cut-off Current VCB= -50V, IE=0 -0.01 µA
hFE DC Current Gain VCE= -10V, IC= -0.1mA
VCE= -10 V, IC= -1.0mA
VCE= -10 V, IC= -10mA
*VCE= -10V, IC= -150mA
*VCE= -10V, IC= -500mA
75
100
100
100
50 300
VCE (sat) * Collector-Emitt er Saturation Voltage IC= -150mA, IB= -15mA
IC= -500mA, IB= -50mA -0.4
-1.6 V
V
VBE (sat) * Base-Emitter Saturation Voltag e IC= -150mA, IB= -15mA
IC= -500mA, IB= -50mA -1.3
-2.6 V
V
fTCurrent Gain Bandwidth Product IC= -50mA, VCE= -20V
f=100MHz 200 MHz
Cob Output Capacitanc e VCB= -10 V, IE=0, f=1.0 MH z 8 pF
tON Tu r n On Time V CC= - 30V, IC= -150mA
IB1= -15mA 50 ns
tOFF Tu rn O f f Time VCC= - 6V, IC= -150mA
IB1=IB2= -15mA 110 ns
KST2907A
General Purpose Transistor
2F
Marking
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
©2002 Fairchild Semiconductor Corporation
KST2907A
Rev. A2, November 2002
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 3 . Output Capacitance Figur e 4. Current Gai n Bandwidth Product
-1 -10 -100 -1000
10
100
1000 VCE = 10V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-1 -10 -100 -1000
-0.01
-0.1
-1
-10
VCE(sat)
VBE(sat)
IC = 10 IB
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-1 -10 -100
0
2
4
6
8
10
12
IE = 0
f = 1MHz
Cob [pF], CAPACITANCE
VCB [V], COLLECTOR-BASE VOLTAGE
-1 -10 -100 -1000
10
100
1000
VCE = -20V
fT[MHz],
CURRENT GAIN BANDWIDT H PRODUCT
IC[mA], COLLECTOR CURRENT
0.96~1.14
0.12
0.03~0.10
0.38 REF
0.40 ±0.03
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03 0.508REF
0.97REF 1.30 ±0.10 0.45~0.60
2.40 ±0.10
+0.05
–0.023
0.20 MIN
0.40 ±0.03
SOT-23
Package Dimensions
KST2907A
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. I1
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CORPORATION.
As used herein:
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when properly used in accordance with instructions for use
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2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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