28K 593 Mat GaAs-N-FET-d VHF/UHF, SV, 50mA, fdss=15...50mA, Up<4V 25(G-DS) - ~S07-103 - F<5/Gp=8dB(800MHz) 2 SK 595 Say N-FET =2SK506: SMD =35t - 2 SK 596 Say N-FET C-Mic, 20V, Idss=0,1...0,8mA, Up<1,5V 4te - 28K597 = Say NET Oe =2SK596 ee : a 2sk600 =sCWHKt 'MOS-N-FET-e VFET, 60/15V, 250, 75W, on<0,055Q 7p ssT0-220, _ BUZ 21, IRF 540...543, 25K942, 2SK11154+ 2SK601 Mat _. MOS-N-FET- SMD, VET, 80/20V, 0,5/1A, 1W, <40(0,5A), 15/20ns___39b sor89,~=;;;C_ BST BO, 2SKIN7B... 1079, 2SK1593, 2SK2110 2 SK 602 Mat MOS-N-FET-e VFET, 800/20V, 1A, 40W, on<8Q 47 SOT-186 BUZ 78, 2SK537 2 SK 603 Mat MOS-N-FET-e VFET, 800/20V, 3A, SOW, on<5s2 16c(p) (TOP-3F) BUZ 307, 2SK726, 2SK954, 2SK1339,++ 28K604 ss Mat MOS-N-FET-e _VFET, 800/20V, 5A, 80W, 0n<3,52 tele _{TOP-3F) - _ _ _BUZ355...57, 2SK695, 25K793, 2SK1461,++ 2 SK 606 Mat N-FET FM Tuner, 30V, 20mA, Idss=0,5...20mA, Up<3V__ TO-92 2SK193, 28K195 F<4/Gp=25dB(100MHz} 2 SK 607 Mat N-FET =2SK606: 40d 28K193, 2SK195 2SK608 Mat N-FET __=2SK606: SMD. ___ 35 SOT-23 8 _ 8SK968 ee 2 SK 609 Nec GaAs-N-FET-d UHEC...Ku-Band, 6V, 120mA, Idss=20...120mA 51(SGSD) SOT-173 : . . _ . Bp=0,...3,5V, Fet /Gp=10dB2GHz) ee . _ . 2Sk6i0 Mat MOS-N-FET-e _VFET, 400/20V, 3A, 80W, on<4Q / ~_-i6cip) ss (TOP-3F), ss tiC#C#@MUZ 207, 2SK415,2SK635,2SK954 00 2 SK 611(2) Nec MOS-N-FET-e VET, 100/20V, +1/3A, 10W, on<52(0.5A), 12/15ns 30p TO-251 28K468, 28K2014 Z: 10-252 2 SK 612(2) Nec MOS-N-FET-e VFET, 100/20V, +2/8A, 20W, on<0,4562(1A), 30/100ns 30p TO-251/252 ; 25K468, 2SK429...430, 2SK699, 2SK1283 2 SK 613 Son N-FET SMD, Camera, 15V, 50mA, Idss=13,4...42mA 35f SOT-23 : ee _ _. Up=0,65...2V,F=1,8/Gp=14dB(100MHz) oe ee 2 Sk 614 Mat MOS-N-FET-e VFET, 80/20V, 0,5/1A, 0,75W, on<4Q(0,5A), 15/20ns 7c T0-92 "BST 70, 2SK423, 2SK940...941, 2SKI729,44 2SK615 __Mat MOS-N-FET-e =2SK614:1W ee ee BST 70, 2SK423, 2SK940...941, 2SK1729,4+ 28k616 Fd -FET-e VFET, 200/20V, 22A, 125W, on<0,12Q 1s CTOSPO __BUZ 350, 28K 1491, 2SK2007, 2SK2058,4+ 2SK617, ss Matt _MOS-N-FET-e VEET, 800/20, 1A, 40W, on<8Q _ CC ee 2 SK 618 Tos GaAs-N-FET-d SMD, VHF/UHF, 10V, 80mA, Idss=20,,.80mA, Up<4V ss 35e SOT-23 - ae a Fe2,5/Gp=19dB(1GHz) ee oe 2 SK 619 Hit MOS-N-FET-* VFET, HF, Video, 70/+9/-6V, 0,3/0,5A, 10W 14f(S=case 70-126 ; : 2 SK 620 Mat MOS-N-FET-e SMD, VFET, int. Diode($G), 50/8V, 0,1/0,2A 3a SOT-23 - on<$022(20mA), 10/20ns 2 SK 621 Mat MOS-N-FET-e SMD,VFET, int. Di+R(S G), 20/8V, 0,1/0,2A, <1/1us 35a SOT-23 - oo . ne _--~;-ONeS0Q(20mA), Ro/Rgs=1/50_ . a oe ce a _ 2 SK 622 Hit MOS-N-FET-e* VFET, 150/20V, 20/80A, 120W, <75mi2(10A), 225/360ns 18p TO-3P ~~ BUZ 350, 2SK1267, 25K1491, 2SK2007,++ 28K623 sHit_ _MOS-N-FET-e* VEET, 250/20V, 20/80A, 120W, <0,15(10A), 225/360ns 18p__ JOSP 2 SK1491, 2SK2007, 25K2058, 25K2075,44 28k624 Mat = SN-FET. LF Inp in, C-Mic, 20V, 2mA, Idss=95...385,A 400 a 28K625 =SsTos N-FET SMD, C-Mic, 20V, Idss=0,06...0,5mA, Up=0,15...0,8V 35f_ ss SOT-23 ee - oe 2 SK 626 Mat MOS-N-FET-e FET, 30V, 20A, 80W, on<0,072 16c(p} (TOP-3F) BUZ 350, 2SK1267 2 SK 627 Mat MOS-N-FET-e =2SK626: 50V : 16c(p) (TOP-3F) ; . BUZ 350, 2SK1267 28K628 Mat MOS-N-FET-e _VFET, 100V, 5A, 40W, on<0,40__ ee ie SOT 186 _ ___ BUK442-100, BUK542-100, 2SK992, 2SK1260+ 28K629 Mat: = MOS-N-FET-. VFET, 100V, 200, 80Wonc019si(ts*~~*iC(YSCC(TOP-SF) ee -28K622, 28K 2ski267 2 SK 630 Mat MOS-N-FET-e VFET, SP, 160V, 5A, 40W, on<0,50 16c(p) (TOP-3F) 2SK631 ss Mat)~= ss MOS-N-FET-e_VFET, 160V, 10A, 80W,on<0,20 AB fp)(TOP-SF) CS KBB, 2EK1SZ9 _ 2 SK 632 Mat MOS-N-FET-e VFET, 200V, 5A, 40W, on<t,202 16c(p} (TOP-3F} 28K633_ ss Mat_=MOS-N-FET- | VFET, 200, 10A, 80W, on<0,250 16 e(p) (TOP-3F) _ 8K. 28K634 Mat NE 4 LL Mo(p) TOP-3F) BU 828, BUZ 951, 2SKE 2 SK 635 Mat MOS-NLFET-e VFET, S00V 3A, 40W. one4.50 16c(p) (TOP-3F) BUZ 307, 28K415, 2SK954 2 SK 636 Mat MOS-N-FET-e FET, 500V, 8A, 80W, on<1,4Q 16c(p) (TOP-3F) IRFPC 50 16p BUZ 330...331, BUZ 353...354 2SK637, Mat MOS-N-FET-e VFET, 500V, 104, 80W, onc 40 1c(p) ___(TOP-3F)_sIRFPC50 ss 16p = SKS57, 29KG44, 2SK1488, 2SK1753,44 2SK638 Mat VFET, 800V, 3A, 80W, on<5Q - __ 18p TO8P __________ BUZ 307, 2SK538, 2SK603, 25K726, 25K1339__ 2 SK 641 Hit MOS-N-FET-e* VFET, 450/15V, 10/30A, 100W, on<0,802(5A), 70/160ns 18p TO-3P IRFPC 50 16p BUZ 339, 2SK896, 2SK1488, 2SK1752,++ 2Sk642, sit, = MOS-N-FET-e* =25K041: 500/15, on<1Q(5A) 18 _TO3P _sIRFPC5O_ =p __BUZ 339, 2SK896, 2SK1488, 2SK1753.44 2 SK 643 Tos MOS-N-FET-e VFET, 450/20V, 10/404, 125W, on<0,802(5A),50/200ns (8p TO-3P BUZ 329, 29K896, 29K1488, 28K1752,+4 28K644 Tos __MOS-N-FET-e =2SK643: 500/20V, <1Q(5A) 18 = TO-3P _____., BUZ 339, 25K896, 25K1488, 2SK1753,44 28K645 Tos sN-FET* C-Mic, 15V, id=100...315pA, Zin>200MQ, Ur<4OmV | - -_ _ _ oe | 2 SK 646 Hit MOS-N-FET-e VET, 1200/20V, 4A, 125W, on<4Q, 80/350ns 23a iT _ _ 7 28K 835 - 2 SK 647 Mat GaAs-N-FET GaAsSB, UHF, 6V, 120mA, \dss=20...120mA 51(SGSD) SOT-173 - Up=0,5...3,5V, F<t,8dB(12GHz) 2 SK 648 Mat GaAs-N-FET GaAsSB, UHF, 6V, 120mA, Idss=20...120mA 51(SGSD) SOT-173 : Up=0,5...3,5V, F<2,3dB(12GHz} 2 SK 649 Mat GaAs-N-FET GaAsSB, Ku-Band, 6V, 0,1A, Idss=40,..80mA 51(SGSD) SOT-173 - Up=1,5<3,5V, F=4,5d8(12GHz) 2 Sk 650 Mat GaAs-N-FET GaAsSB, UHF. 6V, 120mA, Idss=20...120mA 25(GSDS) ~SOT-103 - Up=0,3...3,5V, F<2dB(4GHz) 2. SK 651 Mat GaAs-N-FET GaAsSB, UHF. 6V, 150mA, Idss=40...150mA 25(GSDS} =SOT-103 - Up=1...3,5V, F<4dB(4GHz) / - - / _ ; 28Kk652. 0 Mat FET, =O8K301 40e ; ee SKB 2 SK 653 Mat ~ GaAs-N-FET GaAsSB, SMD, UHF, 5V, 70mA, [dss=15...70mA 44 SOT-143 - en . __._Up=0,5...3V, Fe3dB(800MHz) i a 2 SK 654(Z) Nec MOS-N-FET-e FET, 100/15V, +1/3A, 10W, on<302(0,5A), 12/15ns =-30p T0-251 28K468, 2SKB11...612, 25K2014 ee _ _. 2 eo So a 2 SK 655 Mat MOS-N-FET-e =28K620: 40b : 2 SK 856 Mat MOS-N-FET-e =2SK621: 40b - 2 SK 657 Mat MOS-N-FET-e =2SK620: 9c : 2 SK 658 Mat MOS-N-FET- =2SK621: 9c - 28K 659 __ Nec ss MOS-N-FET-e_VFET, LogL, 60/20V, 12/60A, 35W, on<75mQ(6A)_ 1c SONG _ 28K 1093, 2SK1256, 2SK1344, 2SK1895,++ 2SK 660 __ Nec __ NEFET. C-Mic, 20V, 10mA, dss=0,06...0,5mA, Up<1V, Ur<sSHA 40a (SST) Do _ ce 2 SK 662 Mat N-FET =28K198: : 35e(2mm) SOT-323 - 2SK663 __ Mat N-FET = =2SK374: __ 88af2mm) $0323 ee oe 2 SK 664 Mat MOS-N-FET-e =2SK620: 35a(2mm) SOT-323 : 2SK665 = s__s Mat __MOS-N-FET-e =2SK621: ee _____88a(2mm) SOT-323 - ee ee 2 SK 666 Hit GaAs-N-FET VHF/UHF, 4V, 150mA, ldss=20...80mA 25(GSDS) SOT-103 - . F<3,5/Gp=8dB(900MHz) ; ; ; : ; 2 SK 667 Mat MOS-N-FET- VFET, 400/20V, 8A, 8OW, on<1,50 6c(p) ss (TOP-3F) ; ___ BUZ330...31, BUZ353...54, 28K1488, 25K2361 2SK668 Hit == GaAs-N-FET = =2SK457; _ 44(SDSG) SOT-143 ee ee 2Sk669 Sy _MOS-N-FET-e__ VFET, Analog S, 50/12V, 0,1A, 0,2W, 200 _ a a BSS 100,28K1398 2 SK 671 Son GaAs-N-FET UHEX-Band, 5,5V, 120mA, Idss=35...95mA, Up=1...3,5V 25 =S0T-103 ae ___F3,5/Gp=9dB(12GH2) ee oe _ 2 SK 672 Tos MOS-N-FET-e VFET, 60/20V, 10/40A, 40W, on<0,262(5A), 35/55ns 17p T0-220 ~ BUZ 20, IRF 532...533, 2SK918, 2SK1114,4+ 2 SK 673 Tos MOS-N-FET-e VFET, 60/20V, 15/60A, 75W, on<0,112(8A), 45/100ns 17p TO-220 BUZ 21, IRF 530...531, 2SK971, 2SK1416,++ 28k674 ss Tos, =~ MOS-N-FET-2. VFET, 60/20V, 25/100, 100W, <60mQ(15A), 100/165ns 17p T0-220 ___ BUK 555-60, 28K1291, 28K1296, 2SK2411 2 SK 676 Son GaAs-N-FET UHF, K-Band, 5V, 70mA, Idss=10...70mA, Up=0,2...3V 52(SGSD) SOT-100 - F<1,4/Gp=11dB(12GHz)