HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200211
Issued Date : 2000.08.01
Revised Date : 2002. 05.08
Page No. : 1/3
HMJE13003T HSMC Produc t Specification
HMJE13003T
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMJE13 00 3 T is designe d for high voltage. Hig h spe ed switching
inductive circuits and amplifier applications.
Features
• High Speed Switching
• Low Saturation Voltage
• High Reliab ility
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temper ature............................................................................................ -50 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).................................................................................... 3.5 W
Total Power Dissipation (Tc=25°C)..................................................................................... 30 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 600 V
BVCEO Collector to Emitter Voltage.................................................................................. 400 V
BVEBO Emitter to Base Voltage............................................................................................ 8 V
IC Collector Current (DC)...................................................................................................... 1 A
IC Collector Current (Pulse) .................................................................................................. 2 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 600 - - V IC=1mA, IE= 0
BVCEO 400 - - V IC=10mA, IB=0
BVEBO 8 - - V IE=1mA, IC=0
ICBO - - 10 uA VCB=600V, IE=0
IEBO - - 10 uA VBE=9V, IC=0
*VCE(sat)1 - - 0.8 V IC=0.1A, IB=10mA
*VCE(sat)2 - - 0.9 V IC=0.3A, IB=30mA
*VBE(sat)1 - - 1.2 V IC=0.1A, IB=10mA
*VBE(sat)2 - - 1.8 V IC=0.3A, IB=30mA
*hFE1 10 - 50 IC=0.3A, VCE= 5V
*hFE2 10 - - IC=0.5A, VCE= 5V
*hFE3 6 - - IC=1A, VCE=5V
*Pulse Test: Pulse Width ≤380us, Dut y Cycle≤2%
TO-126
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200211
Issued Date : 2000.08.01
Revised Date : 2002. 05.08
Page No. : 2/3
HMJE13003T HSMC Produc t Specification
Characteristics Curve
Curren t Gain & Collect or Curren t
1
10
100
0.1 1 10 100 1000 10000
Collector Curren t-I
C
(mA)
hFE
25
o
C
75
o
C125
o
C
hFE @ V
CE
=2V
Satur ati on Voltage & Collector Current
10
100
1000
1 10 100 1000 10000
Collector Cur r e nt-I
C
(mA)
Saturation Voltage (mV)
25oC
75oC
125oC
VCE(sat) @ IC=3IB
Satur ati on Voltage & Collector Current
10
100
1000
10000
1 10 100 1000 10000
Collec tor Current-I
C
(mA)
Saturation Volta ge (mV)
125
o
C
75
o
C
25
o
C
V
CE(sat)
@ I
C
=4I
B
Satur ation Voltage & Collector Current
10
100
1000
10000
1 10 100 1000 10000
Collector Curren t-I
C
(mA)
Saturation Vpltage (mV)
25oC
125oC
75oC
VCE(sat) @ IC=5IB
Satur ation Voltage & C ollect or Cur rent
100
1000
10000
1 10 100 1000 10000
Collector Curren t-I
C
(mA)
Saturation Voltage (mV)
125oC
25oC
75oC
VBE(sat) @ IC=4IB
Satur ation Voltage & C ollect or Cur rent
100
1000
10000
1 10 100 1000 10000
Collec tor Current-I
C
(mA)
Sat u r ation Volt ag e ( mV)
25
o
C
75
o
C
125
o
C
V
BE(sat)
@ I
C
=5I
B
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200211
Issued Date : 2000.08.01
Revised Date : 2002. 05.08
Page No. : 3/3
HMJE13003T HSMC Produc t Specification
TO-126 Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.
α1-*3°-*3°F 0.0280 0.0319 0.71 0.81
α2-*3°-*3°G 0.0480 0.0520 1.22 1.32
α3-*3°-*3°H 0.1709 0.1890 4.34 4.80
α4-*3°-*3°I 0.0950 0.1050 2.41 2.66
A 0.1500 0.1539 3.81 3.91 J 0.0450 0.0550 1.14 1.39
B 0.2752 0.2791 6.99 7.09 K 0.0450 0.0550 1.14 1.39
C 0.5315 0.6102 13.50 15.50 L - *0.0217 - *0.55
D 0.2854 0.3039 7.52 7.72 M 0.1378 0.1520 3.50 3.86
E 0.0374 0.0413 0.95 1.05
Notes: 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controll i ng dimensi on: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any questi on with packi ng specifi cation or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 All oy; solder pl ating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any cons equence of cust om er product design, infringement of patents, or applicat ion assistance.
Head Office And Factory:
• Head Office (Hi-Sincerit y Mic roel ectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industri a l Park Hsi n-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax: 886-3-5982931
A
B
C
F
DE
H
123
KJ I
α3
α4
L
M
α1
α2
G
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-126 Plastic Package
HSMC Packa
g
e Code: T
Marking:
HSMC Logo
Part Number
Date Code
Product Series
Ink Marking
