ON Semiconductor Plastic Medium Power NPN Silicon Transistor BD159 . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 20 WATTS * Suitable for Transformerless, Line-Operated Equipment * Thermopad Construction Provides High Power Dissipation Rating for High Reliability IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII IIIII IIII IIIIIIIIIIIIIIIIIII IIIII IIII IIIII IIII IIIIIIIIIIIIIIIIIII IIIII IIII IIIII IIII IIIIIIIIIIIIIIIIIII IIIII IIII IIIII IIII IIIIIIIIIIIIIIIIIII IIIII IIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII IIIII IIII IIIIIIIIIIIIIIIIIII IIIII IIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII IIIII IIII IIIIIIIIIIIIIIIIIII IIIII IIII IIIII IIII MAXIMUM RATINGS Rating Symbol Max Unit VCEO 350 Vdc Collector-Base Voltage VCB 375 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current -- Continuous Peak IC 0.5 1.0 Adc Base Current IB 0.25 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 20 0.16 Watts W/C TJ, Tstg -65 to +150 C Symbol Max Unit JC 6.25 C/W Collector-Emitter Voltage Operating and Storage Junction Temperature Range STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case CASE 77-09 TO-225AA TYPE ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit BVCEO 350 -- Vdc Collector Cutoff Current (At rated voltage) ICBO -- 100 Adc Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO -- 100 Adc hFE 30 240 -- OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0) ON CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) Semiconductor Components Industries, LLC, 2002 April, 2002 - Rev. 3 1 Publication Order Number: BD159/D BD159 PD, POWER DISSIPATION (WATTS) 25 1.0 V, VOLTAGE (VOLTS) 20 15 10 0.8 VBE @ IC/IB = 10 0.6 VBE @ VCE = 10 V 0.4 VCE(sat) @ IC/IB = 10 0.2 IC/IB = 5.0 5.0 0 20 40 60 80 100 120 140 0 160 10 20 TC, CASE TEMPERATURE (C) Figure 1. Power-Temperature Derating Curve IC, COLLECTOR CURRENT (AMPS) TJ = +25C 1.0 0.7 0.5 500 s TJ = 150C 0.3 dc 0.2 500 Figure 2. "On" Voltages The Safe Operating Area Curves indicate IC - VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below, the maximum TJ, power-temperature derating must be observed for both steady state and pulse power conditions. 10 s 1.0 ms 0.1 0.07 0.05 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 0.03 0.02 0.01 30 50 100 200 300 IC, COLLECTOR CURRENT (mA) 10 20 30 50 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 300 Figure 3. DC Safe Operating Area 300 VCE = 10 V VCE = 2.0 V hFE, DC CURRENT GAIN 200 TJ = 150C 100 + 100C 70 50 + 25C 30 20 10 - 55C 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IC, COLLECTOR CURRENT (mAdc) Figure 4. Current Gain http://onsemi.com 2 70 100 200 300 500 BD159 PACKAGE DIMENSIONS CASE 77-09 TO-225AA TYPE ISSUE W -B- U F Q -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE http://onsemi.com 3 MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- BD159 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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