3
1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switch
applications requiring high voltages. Sourced from Process 74.
BSS63
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 100 V
VCBO Collector-Base Voltage 110 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
C
E
B
SOT-23
Mark: T3
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics T A = 25°C unless otherwise noted
Symbol Characteristic Max Units
*BSS63
PDTotal Device Dissipati on
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
BSS63
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
PNP (Is=21.48f Xti=3 Eg=1.1 1 V af=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2 Isc=0
Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p Itf=0
Vtf=0 Xtf=0 Rb=10)
Typical Characteristics
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 100
µ
A, IB = 0 100 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10
µ
A, IE = 0 110 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 1.0
µ
A, IC = 0 6.0 V
ICBO Collector-Cutoff Current VCB = 90 V, IE = 0
VCB = 90 V, IE = 0, TA = 150°C100
50 nA
µ
A
IEBO Emi t t er-Cutoff Current VEB = 6.0 V, IC = 0 200 nA
ON CHARACTERISTICS
hFE DC Current Gain IC = 10 mA, VCE = 1.0 V
IC = 25 mA, VCE = 1.0 V 30
30
VCE(sat)Collector-Emitter Saturation Voltage IC = 25 mA, IB =2.5 mA 0.25 V
VBE(sat)Base-Emitter Saturation Voltage IC = 25 mA, IB =2.5 mA 0.9 V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Ba ndwidth Product IC = 25 mA, VCE = 5.0,
f = 35 MHz 50 MHz
Spice Model
PNP (Is=21.48f Xti=3 Eg=1.1 1 V af=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2 Isc=0
Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p Itf=0
Vtf=0 Xtf=0 Rb=10)
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typ ical Pulsed Curr ent Gai n
vs Collector Cur rent
0.0001 0.001 0.01 0.1 1
0
50
100
150
200
I - COLLE CTOR CURRENT (A)
h - TYPICAL PULSED CURRENT GAI N
FE
- 40 °C
25 °C
C
V = 5V
CE
125 °C
Co llector-Emitter Satu r ati on
Vo ltage vs C o ll e ctor Cu r rent
0.1 1 10 100
0
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V - COLLE CTOR-EMI TTER VOLTAGE (V)
CESAT
C
β= 10
125 °C
- 40 °C
25 °C
PNP General Purpose Amplifier
(continued)
BSS63
3
Typical Characteristics
PNP General Purpose Amplifier
(continued)
C o ll ector- E mitte r Br ea kd own
Voltage wi t h Resistan ce
Betwee n Emitter -Ba se
0.1 1 10 100 1000
170
180
190
200
210
220
RESISTANCE (k )
BV - BREAKDOWN VOLTAGE (V)
Ω
CER
Input and Out put Capacitance
vs Reverse Voltage
0.1 1 10 100
0
20
40
60
80
V - REVERSE BIAS VOLTAGE(V)
CAPA CITAN CE ( p F )
C
f = 1.0 M H z
R
C
cb
eb
BSS63
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
SOT-23
Base-Emitter ON Voltage vs
Co llector Cur rent
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - C OLLECTOR CURRENT (mA)
V - BASE- EMIT TER O N VOLTAGE ( V )
BE(ON)
125 °C
- 40 °C
25 °C
C
V = 5 V
CE
B ase-Emitter Satu ration
Voltage vs C o llec tor C u rren t
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - C OLLE CTOR CURRENT (mA)
V - BA SE-EMITTER VOLTAGE (V)
BESAT
C
β= 10
125 °C
- 40 °C
25 °C
Co llector-Cu to ff Cur rent
vs Amb ient Temperatur e
25 50 75 100 125 150
0.1
1
10
100
T - AM BIE NT TEMPE RATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 100V
CB
°
CBO
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not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF F AIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
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OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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