BCR08PN
Nov-29-20011
NPN/PNP Silicon Digital Transistor Array
Switching circuit, inverter, interface circuit,
driver circuit
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Built in bias resistor (R1=2.2k
, R2=47k
)
Tape loading orientation
VPS05604
6
3
1
54
2
EHA07193
123
456
W1s
Direction of Unreeling
Top View Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
EHA07176
654
321
C1 B2 E2
C2B1E1
1
R
R2
R1
R2
TR1 TR2
Type Marking Pin Configuration Package
BCR08PN WFs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 50 V
Collector-base voltage VCBO 50
Emitter-base voltage VEBO 5
Input on Voltage Vi(on) 10
DC collector current IC100 mA
Total power dissipation, TS = 115 °C Ptot 250 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
140 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BCR08PN
Nov-29-20012
Electrical Characteristics at T
A
=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0 V(BR)CEO 50 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0 V(BR)CBO 50 - -
Collector cutoff current
VCB = 40 V, IE = 0 ICBO - - 100 nA
Emitter cutoff current
VEB = 5 V, IC = 0 IEBO - - 164 µA
DC current gain 1)
IC = 5 mA, VCE = 5 V hFE 70 - - -
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA VCEsat - - 0.3 V
Input off voltage
IC = 100 µA, VCE = 5 V Vi(off) 0.4 - 0.8
Input on Voltage
IC = 2 mA, VCE = 0.3 V Vi(on) 0.5 - 1.1
Input resistor R11.5 2.2 2.9 k
Resistor ratio R1/R20.042 0.047 0.052 -
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz fT- 170 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz Ccb - 2 - pF
1) Pulse test: t < 300
s; D < 2%
BCR08PN
Nov-29-20013
NPN Type
DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)
10 -1 10 0 10 1 10 2
mA
IC
0
10
1
10
2
10
3
10
-
h
FE
Collector-Emitter Saturation Voltage
VCEsat = f (IC), hFE = 20
0.0 0.1 0.2 0.3 V0.5
VCEsat
0
10
1
10
2
10
mA
I
C
Input on Voltage Vi(on) = f (IC)
VCE = 0.3V (common emitter configuration)
10 -1 10 0 10 1 10 2
V
Vi(on)
-1
10
0
10
1
10
2
10
mA
I
C
Input off voltage Vi(off) = f (IC)
VCE = 5V (common emitter configuration)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V1.0
Vi(off)
-3
10
-2
10
-1
10
0
10
1
10
mA
I
C
BCR08PN
Nov-29-20014
PNP Type
Collector-Emitter Saturation Voltage
VCEsat = f (IC), hFE = 20
0.0 0.1 0.2 0.3 V0.5
VCEsat
0
10
1
10
2
10
mA
I
C
DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)
10 -1 10 0 10 1 10 2
mA
IC
0
10
1
10
2
10
3
10
-
h
FE
Input off voltage Vi(off) = f (IC)
VCE = 5V (common emitter configuration)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V1.0
Vi(off)
-3
10
-2
10
-1
10
0
10
1
10
mA
I
C
Input on Voltage Vi(on) = f (IC)
VCE = 0.3V (common emitter configuration)
10 -1 10 0 10 1 10 2
V
Vi(on)
-1
10
0
10
1
10
2
10
mA
I
C
BCR08PN
Nov-29-20015
Total power dissipation Ptot = f (TS)
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
mW
300
Ptot
Permissible Pulse Load RthJS = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
