PMF170XP,115 - NEXPERIA

PMF170XP

20 V, 1 A P-channel Trench MOSFET

29 October 2013 Product data sheet

1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small

Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

•Low RDSon

•Very fast switching

•Trench MOSFET technology

3. Applications

•Relay driver

•High-speed line driver

•High-side loadswitch

•Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage - - -20 V

VGS gate-source voltage

Tj = 25 °C

-12 - 12 V

IDdrain current VGS = -4.5 V; Tamb 25 °C [1] - - -1 A

Static characteristics

RDSon drain-source on-state

resistance

VGS = -4.5 V; ID = -1 A; Tj = 25 °C - 175 200 mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm2.

Nexperia PMF170XP

20 V, 1 A P-channel Trench MOSFET

PMF170XP All information provided in this document is subject to legal disclaimers.

Product data sheet 29 October 2013 2 / 15

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate

2 S source

3 D drain

1 2

SC-70 (SOT323)

017aaa094

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

PMF170XP SC-70 plastic surface-mounted package; 3 leads SOT323

7. Marking

Table 4. Marking codes

Type number Marking code

[1]

PMF170XP XD%

[1] % = placeholder for manufacturing site code

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - -20 V

VGS gate-source voltage

Tj = 25 °C

-12 12 V

VGS = -4.5 V; Tamb 25 °C [1] - -1 AIDdrain current

VGS = -4.5 V; Tamb = 100 °C [1] - -0.7 A

IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -4 A

[2] - 290 mWTamb = 25 °C

[1] - 360 mW

Ptot total power dissipation

Tsp = 25 °C - 1670 mW

Tjjunction temperature -55 150 °C

Nexperia PMF170XP

20 V, 1 A P-channel Trench MOSFET

PMF170XP All information provided in this document is subject to legal disclaimers.

Product data sheet 29 October 2013 3 / 15

Symbol Parameter Conditions Min Max Unit

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

Source-drain diode

ISsource current Tamb = 25 °C [1] - -0.4 A

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm2.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Tj(°C)

- 75 17512525 75- 25

017aaa123

120

Pder

(%)

Fig. 1. Normalized total power dissipation as a

function of junction temperature

Tj(°C)

- 75 17512525 75- 25

017aaa124

120

Ider

(%)

Fig. 2. Normalized continuous drain current as a

function of junction temperature

Nexperia PMF170XP

20 V, 1 A P-channel Trench MOSFET

PMF170XP All information provided in this document is subject to legal disclaimers.

Product data sheet 29 October 2013 4 / 15

017aaa300

VDS (V)

-10 -1 -10 2

-10- 1

- 1

-10 -1

-10

(A)

-10 -2

(1)

(2)

(3)

(4)

(5)

Limit RDSon = VDS/ID

IDM = single pulse

(1) tp = 1 ms

(2) tp = 10 ms

(3) DC; Tsp = 25 °C

(4) tp = 100 ms

(5) DC; Tamb = 25 °C; drain mounting pad 6 cm2

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

[1] - 377 430 K/WRth(j-a) thermal resistance

from junction to

ambient

in free air

[2] - 305 350 K/W

Rth(j-sp) thermal resistance

from junction to solder

point

- 65 75 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.

Nexperia PMF170XP

20 V, 1 A P-channel Trench MOSFET

PMF170XP All information provided in this document is subject to legal disclaimers.

Product data sheet 29 October 2013 5 / 15

017aaa301

tp (s)

10- 3 102103

10110- 2 10- 1

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33 0.25

0.2

0.1

0.05 0.02

0.01 0

FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

017aaa302

tp (s)

10-3 102103

10110-2 10-1

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33 0.25

0.2

0.1

0.05 0.02

0.01 0

FR4 PCB, mounting pad for drain 6 cm2

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source

breakdown voltage

ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V

VGSth gate-source threshold

voltage

ID = -250 A; VDS = VGS; Tj = 25 °C -0.65 -0.9 -1.15 V

VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µAIDSS drain leakage current

VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -10 µA

Nexperia PMF170XP

20 V, 1 A P-channel Trench MOSFET

PMF170XP All information provided in this document is subject to legal disclaimers.

Product data sheet 29 October 2013 6 / 15

Symbol Parameter Conditions Min Typ Max Unit

VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nAIGSS gate leakage current

VGS = 12 V; VDS = 0 V; Tj = 25 °C - - -100 nA

VGS = -4.5 V; ID = -1 A; Tj = 25 °C - 175 200 mΩ

VGS = -4.5 V; ID = -1 A; Tj = 150 °C - 250 284 mΩ

RDSon drain-source on-state

resistance

VGS = -2.5 V; ID = -1 A; Tj = 25 °C - 240 300 mΩ

gfs forward

transconductance

VDS = -5 V; ID = -1 A; Tj = 25 °C - 1.9 - S

Dynamic characteristics

QG(tot) total gate charge - 2.6 3.9 nC

QGS gate-source charge - 0.63 - nC

QGD gate-drain charge

VDS = -10 V; ID = -1 A; VGS = -4.5 V;

Tj = 25 °C

- 0.53 - nC

Ciss input capacitance - 280 - pF

Coss output capacitance - 43 - pF

Crss reverse transfer

capacitance

VDS = -10 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

- 30 - pF

td(on) turn-on delay time - 10 - ns

trrise time - 16 - ns

td(off) turn-off delay time - 31 - ns

tffall time

VDS = -10 V; ID = -1 A; VGS = -4.5 V;

RG(ext) = 6 Ω; Tj = 25 °C

- 13 - ns

Source-drain diode

VSD source-drain voltage IS = -0.4 A; VGS = 0 V; Tj = 25 °C - -0.7 -1.2 V

Nexperia PMF170XP

20 V, 1 A P-channel Trench MOSFET

PMF170XP All information provided in this document is subject to legal disclaimers.

Product data sheet 29 October 2013 7 / 15

VDS (V)

0 - 4- 3- 1 - 2

017aaa303

- 2

- 1

- 3

- 4

(A)

VGS = - 3.5 V

- 4.5 V

- 3.0 V

- 2.5 V

- 1.8 V

- 2.0 V

- 1.5 V

Tj = 25 °C

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

017aaa129

VGS (V)

0.0 - 1.5- 1.0- 0.5

- 10- 4

- 10- 5

- 10- 3

(A)

- 10- 6

(2)(1) (3)

Tj = 25 °C; VDS = -3 V

(1) minimum values

(2) typical values

(3) maximum values

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

ID (A)

-2.0 -4.0-3.5-2.5 -3.0

017aaa304

200

300

100

400

500

RDSon

(mΩ)

(1)

(2)

(3)

(4)

(5)

Tj = 25 °C

(1) VGS = -2.5 V

(2) VGS = -3.0 V

(3) VGS = -3.5 V

(4) VGS = -4.0 V

(5) VGS = -4.5 V

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

VGS (V)

0 - 6- 4- 2

017aaa305

200

400

600

RDSon

(mΩ)

(1)

(2)

ID = -1 A

(1) Tj = 150 °C

(2) Tj = 25 °C

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

Nexperia PMF170XP

20 V, 1 A P-channel Trench MOSFET

PMF170XP All information provided in this document is subject to legal disclaimers.

Product data sheet 29 October 2013 8 / 15

017aaa306

VGS (V)

0 - 3- 2- 1

- 2

- 1

- 3

- 4

(A)

(1)

(2)

VDS > ID × RDSon

(1) Tj = 25 °C

(2) Tj = 150 °C

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Tj (°C)

-60 1801200 60

017aaa307

1.0

1.2

0.8

1.4

1.6

0.6

Fig. 11. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

Tj(°C)

- 60 1801200 60

017aaa134

- 0.8

- 0.4

- 1.2

- 1.6

VGS(th)

(V)

0.0

(1)

(2)

(3)

ID = -0.25 mA; VDS = VGS

(1) maximum values

(2) typical values

(3) minimum values

Fig. 12. Gate-source threshold voltage as a function of

junction temperature

017aaa308

VDS (V)

-10-1 -102

-10-1

102

103

(pF)

Ciss

Coss

Crss

f = 1 MHz; VGS = 0 V

(1) Ciss

(2) Coss

(3) Crss

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

Nexperia PMF170XP

20 V, 1 A P-channel Trench MOSFET

PMF170XP All information provided in this document is subject to legal disclaimers.

Product data sheet 29 October 2013 9 / 15

017aaa309

QG (nC)

0 321

- 2

- 3

- 1

- 4

- 5

VGS

(V)

ID = -1.0 A; VDS = -10 V; Tamb = 25 °C

Fig. 14. Gate-source voltage as a function of gate

charge; typical values

017aaa137

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

QGS

VGS(pl)

Fig. 15. Gate charge waveform definitions

017aaa310

VSD (V)

0.0 -1.2-0.8-0.4

-1.0

-0.5

-1.5

-2.0

(A)

0.0

(1) (2)

VGS = 0 V

(1) Tj = 150 °C

(2) Tj = 25 °C

Fig. 16. Source current as a function of source-drain voltage; typical values

Nexperia PMF170XP

20 V, 1 A P-channel Trench MOSFET

PMF170XP All information provided in this document is subject to legal disclaimers.

Product data sheet 29 October 2013 10 / 15

11. Test information

006aaa812

duty cycle δ =

Fig. 17. Duty cycle definition

12. Package outline

04-11-04Dimensions in mm

0.45

0.15

1.1

0.8

2.2

1.8

2.2

2.0

1.35

1.15

1.3

0.4

0.3

0.25

0.10

1 2

Fig. 18. Package outline SC-70 (SOT323)

Nexperia PMF170XP

20 V, 1 A P-channel Trench MOSFET

PMF170XP All information provided in this document is subject to legal disclaimers.

Product data sheet 29 October 2013 11 / 15

13. Soldering

solder lands

solder resist

occupied area

solder paste

sot323_fr

2.65

2.35 0.6

(3×)

0.5

(3×)

0.55

(3×)

1.325

1.85

1.3

Dimensions in mm

Fig. 19. Reflow soldering footprint for SC-70 (SOT323)

sot323_fw

3.65 2.1

1.425

(3×)

4.6

(2×)

2.575

1.8

solder lands

solder resist

occupied area

preferred transport

direction during soldering

Dimensions in mm

Fig. 20. Wave soldering footprint for SC-70 (SOT323)

Nexperia PMF170XP

20 V, 1 A P-channel Trench MOSFET

PMF170XP All information provided in this document is subject to legal disclaimers.

Product data sheet 29 October 2013 12 / 15

14. Revision history

Table 8. Revision history

Data sheet ID Release date Data sheet status Change notice Supersedes

PMF170XP v.2 20131029 Product data sheet - PMF170XP v.1

Modifications: •Figure 13 corrected

PMF170XP v.1 20110902 Product data sheet - -

Nexperia PMF170XP

20 V, 1 A P-channel Trench MOSFET

PMF170XP All information provided in this document is subject to legal disclaimers.

Product data sheet 29 October 2013 13 / 15

15. Legal information

15.1 Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nexperia.com.

15.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

Nexperia does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local Nexperia

sales office. In case of any inconsistency or conflict with the

short data sheet, the full data sheet shall prevail.

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Limited warranty and liability — Information in this document is believed

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Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

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Applications — Applications that are described herein for any of these

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and the products or of the application or use by customer’s third party

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

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No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

Nexperia PMF170XP

20 V, 1 A P-channel Trench MOSFET

PMF170XP All information provided in this document is subject to legal disclaimers.

Product data sheet 29 October 2013 14 / 15

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

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Nexperia accepts no liability for inclusion and/or use of non-

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In the event that customer uses the product for design-in and use in

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between the translated and English versions.

15.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

Nexperia PMF170XP

20 V, 1 A P-channel Trench MOSFET

PMF170XP All information provided in this document is subject to legal disclaimers.

Product data sheet 29 October 2013 15 / 15

16. Contents

1 General description ............................................... 1

2 Features and benefits ............................................1

3 Applications ........................................................... 1

4 Quick reference data ............................................. 1

5 Pinning information ............................................... 2

6 Ordering information .............................................2

7 Marking ................................................................... 2

8 Limiting values .......................................................2

9 Thermal characteristics .........................................4

10 Characteristics .......................................................5

11 Test information ................................................... 10

12 Package outline ................................................... 10

13 Soldering .............................................................. 11

14 Revision history ...................................................12

15 Legal information .................................................13

15.1 Data sheet status ............................................... 13

15.2 Definitions ...........................................................13

15.3 Disclaimers .........................................................13

15.4 Trademarks ........................................................ 14

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Date of release:

29 October 2013