SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE BVceEo hee Vce(saT) fr Ch @10V, Pr Device Type @10mA Typical 1 MHz @ 25C (Vv) Min.-Max. @ 1,Vc_(V) |(V) Max. @ Ic, Ig (MHz) Typical (Pf) (mW) 2N2711 2N2712 2N2713 2N2714 2N2923 soon 2N2924 2N2925 2N2926 2N3390 2N3391 DADAOG ~~ NS NS SI OS 2N3391A 2N3392 2N3393 2N3394 2N3395 DHHAOAD ~~ NSN 2N3396 2N3397 2N3398 2N3402 2N3403 aann ws 2N3404 2N3405 2N3414 2N3415 2N3416 oooag o 2N3417 2N3662 2N3663 2N3843 2N3843A NNwoOoM 2N3844 2N3844A 2N3845 2N3845A 2N3854 SNM NN = 2N3854A 2N3855 2N3855A 2N3856 2N3856A NANNN 2N3858 2N3858A 2N3859 2N3859A 2N3860 2N3877 2N3877A 2N3900 2N3900A 2N3901 www MN NNNNN 101 SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE BVcEO hee NE (v) Min.-Max. @1,Vce(V) (db) 2N3391A 5.0 . 2N3844 \ : " 10.2 2N3844A , : 8.5 2N3845 ae 10.2 2N3845A 8.5 Conditions Device Type 2N3900A 2N3901 2N5232A 2N5249A 2N5306A 2N5308A 2N5309 2N5310 2N5311 SILICON SIGNAL LOW NOISE AMPLIFIERS T0-92 PACKAGE BVcEO here NF Device Type (V) Min.-Max. @ Ico, VcE{V) (db) Conditions GES5827A GESS828A GES6000 GES6001 WWwon GES6004 GES6005 GES6010 GES6011 GES6014 WoW WwW GES6015 GES929 GES930 GES5306A GES5308A D3881-4 D38S87 D38S8-10 D38W8-10 D38W 13-14 GES6012 GES6013 GES6016 GES6017 109 Silicon a GG Transistors 2N3901 The General Electric 2N3901 is an NPN silicon planar transistor characterized for general industrial low signal level application. It features high current gain and ft, and low leakage current and collector capacitance. The planar construc- tion assures excellent parameter stability with life. absolute maximum ratings (25C) unless otherwise specified 205 _ Voltages A958 Collector to Emitter Vero 18 V 190 Emitter to Base Veo 5 V fe 165 Collector to Base Veo 18 V NOTE 1: Lead diameter is controlled in the om f zone between .070 and .250 from the seat- SEE Current ing plane. Between 250 and end of lead a 0 265 Collector (Steady State) Te 100 mA __ max of 021 is held. 308 Dissipation IP (F A ye Pp Ww | 500 SEATING otal Power (Free Air @ 25 Tr 3860 m Total Power (Free Air @ 55C) P 250 mW ALLDIMEN: IN INCHES AND ARE /'() [] [] | MIN PLANE |-| }-|.050+ .005 Temperature 1 ft Storage Tate 55to+125 C + J | 100+ .005 Operating T; 55to+125 C 3 LEAs p05 Lead Soldering, , + , Ti +260 C corr +002 - from case for 10 seconds max. (NOTE 1) 14 10 I Determined from power limitations due to saturation voltage at this current. t__. Derate 2.67 mw/C increase in ambient temperature above 25C. electrical characteristics (25C) unless otherwise specified Min. Typ. Max. Collector Cutoff Current (Vos = 15V) Tczo 0.2 10 nA (Vos = 15V, Ts = 100C) Tcso 013 10 wA Emitter Cutoff Current (Vis = 5V) Lazo 01 pA Forward Current Transfer Ratio (Ves = 4.5V, Ic = 2 mA) hre 350 700 SMALL SIGNAL CHARACTERISTICS Forward Current Transfer Ratio (Vea = 4.5V, Ic = 2mA, f = 1 kHz) hee 350 Output Capacitance (Ves = 10V, Iz = 0, f = 1 MHz) Con 4.5 7 10 pF Gain Bandwidth Product (Ic = 4mA, Ves = 5V) f, 200 MHz NOISE 7 1+ en/Rg + i. Rg NF =~ 10 logio ( 4KTB where: en, in are transistor noise voltage and noise current as obtained in Fig. 8 B is the bandwidth in cycles 4 KT = 1.66 x 10 en Optimum generator resistance for minimum noise, Rope = -_ To 10% LTPD 395 h PARAMETERS NORMALIZED TO 25 nN wu 4 o 20 PTI dtd h PARAMETERS VS TEMPERATURE i] re Vc = 10V Toth fe 1g = Ima 13 T te4Ke A td oe Lt Lo 4 Noe eon} a hei = 17 Kohms L ny tH hog 52 mhos fe a 2 tre LA hye = 1 X109 hie hee = 540 it -40 -30 -20 -0 0 10 20 30 40 50 60 70 80 90 100 NORMALIZED heg NORMALIZED hee Nee NORMALIZED TO 2mo, 25C Veg *4.5V T.25C Oma Zeno IN NANO AMPS TEMPERATURE INC Fig. 6 Iguo VS TEMPERATURE Vep * 18V TEMPERATURE INC fig. 4 h PARAMETERS NORMALIZED TO 0.Ima A PARAMETERS AT Ic Rig 120K OHMS: hee * 26 5 MHOS bre 74 xOF tite = 420 h PARAMETERS V3 Ic Vee tr f =1KC Ths 28% 2O.lma Tg Wma Fig. 7 396 Cip AND Cep IN pF ty ve \ 1 a Pgt Her e)] Ap 7 xo (C+ C,)~68pt pa 028 56 I 04 06 0801 tgs ma Fig. 2 Cib AND Cop VS VOLTAGE t=IMC T,225C 2 4 6 4 0 20 Vee of Vog IN VOLTS Fig. 5 NOISE. VOLTAGE & CURRENT on 2 VS Ig FOR 2N3390-Vg28 ZN3S90 BONS, 2uIB00 ENSBI-10070 2N35SO, 203901 (Oh Ty eee eo c2N3301 J ra s Woy oe Ey X10 VOLTA 6 oe Va Sl ; oe SZ 7 A a i of he poe on <a - " - a < od oo + wo woo Teena Fig. 8 Ty Ps x10 LAS