Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 4 1Publication Order Number:
2N6504/D
2N6504 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
•Glass Passivated Junctions with Center Gate Fire for Greater
Parameter Uniformity and Stability
•Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
•Blocking Voltage to 800 Volts
•300 A Surge Current Capability
•Device Marking: Logo, Device Type, e.g., 2N6504, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
*Peak Repetitive Off–State Voltage (Note 1.)
(Gate Open, Sine Wave 50 to 60 Hz,
TJ = 25 to 12 5°C) 2N6504
2N6505
2N6507
2N6508
2N6509
VDRM,
VRRM
50
100
400
600
800
Volts
On-State RMS Current
(180° Conduction Angles; TC = 85°C) IT(RMS) 25 A
Average On-State Current
(180° Conduction Angles; TC = 85°C) IT(AV) 16 A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 100°C) ITSM 250 A
Forward Peak Gate Power
(Pulse Width ≤1.0 µs, TC = 85°C) PGM 20 Watts
Forward Average Gate Power
(t = 8.3 ms, TC = 85°C) PG(AV) 0.5 Watts
Forward Peak Gate Current
(Pulse Width ≤1.0 µs, TC = 85°C) IGM 2.0 A
Operating Junction Temperature Range TJ–40 to
+125 °C
Storage Temperature Range Tstg –40 to
+150 °C
*Indicates JEDEC Registered Data
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SCRs
25 AMPERES RMS
50 thru 800 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
2N6504 TO220AB 500/Box
2N6505 TO220AB
2N6507 TO220AB
http://onsemi.com
500/Box
500/Box
K
G
A
TO–220AB
CASE 221A
STYLE 3
123
4
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4Anode
2N6508 TO220AB 500/Box
2N6509 TO220AB 500/Box
MARKING
DIAGRAM
YY WW
650x
x = 4, 5, 7, 8 or 9
YY = Year
WW = Work Week
2N6504 Series
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2
*THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.5 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C
TJ = 125°C
IDRM, IRRM –
––
–10
2.0 µA
mA
ON CHARACTERISTICS
*Forward On–State Voltage (Note 2.)
(ITM = 50 A) VTM – – 1.8 Volts
*Gate Trigger Current (Continuous dc) TC = 25°C
(VAK = 12 Vdc, RL = 100 Ohms) TC = –40°CIGT –
–9.0
–30
75 mA
*Gate Trigger Voltage (Continuous dc)
(VAK = 12 Vdc, RL = 100 Ohms, TC = –40°C) VGT – 1.0 1.5 Volts
Gate Non-Trigger Voltage
(VAK = 12 Vdc, RL = 100 Ohms, TJ = 125°C) VGD 0.2 – – Volts
*Holding Current TC = 25°C
(VAK = 12 Vdc, Initiating Current = 200 mA,
Gate Open) TC = –40°C
IH–
–
18
–
40
80
mA
*Turn-On Time
(ITM = 25 A, IGT = 50 mAdc) tgt – 1.5 2.0 µs
Turn-Off Time (VDRM = rated voltage)
(ITM = 25 A, IR = 25 A)
(ITM = 25 A, IR = 25 A, TJ = 125°C)
tq–
–15
35 –
–
µs
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage
(Gate Open, Rated VDRM, Exponential Waveform) dv/dt – 50 – V/µs
*Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2N6504 Series
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3
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol Parameter
VDRM Peak Repetitive Off State Forward Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage
IHHolding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode –
Forward Blocking Region
IRRM at VRRM
(off state)
C
T , MAXIMUM CASE TEMPERATURE ( C)°
dc180°
16
12
0
80
90
10
0
110
13
0
60°
α = 30°
0 4.0 8.0 12 20
α = CONDUCTION ANGLE
IT(AV), ONSTATE FORWARD CURRENT (AMPS)
α
90°
P , AVERAGE POWER (WATTS)
(AV)
180°
90°
24
0
8.0
16
32
TJ = 125°C
dc
60°
α = 30°
IT(AV), AVERAGE ONSTATE FORWARD CURRENT (AMPS)
160 4.0 8.0 12 20
α = CONDUCTION ANGLE
α
Figure 1. Average Current Derating Figure 2. Maximum On–State Power Dissipation
2N6504 Series
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4
1.0
0.02
0.03
0.05
0.07
0.1
100
0.2
0.3
0.5
0.7
0.2 0.3 0.5 1.0 2.0
25°C
125°C
0.4
0.1
ZθJC(t) = RθJC • r(t)
1 CYCLE
1.0
200
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
TC = 85°C
f = 60 Hz
NUMBER OF CYCLES
225
250
275
300
20
2.0 3.0 4.0 6.0 8.0 10
0.1
0
0.01
t, TIME (ms)
3.0 5.0
175
0.2
0.3
0.5
0.7
7.0
5.0
1.0
2.0
10
50
3.0
20
30
70
vF, INSTANTANEOUS VOLTAGE (VOLTS)
1.2 2.01.6 2.4 2.80.8
30 50 100 200 300 500 2.0 k10 3.0 k 5.0 k 10 k1.0 k
I , PEAK SURGE CURRENT (AMP)
TSM
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) F
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
Figure 3. Typical On–State Characteristics Figure 4. Maximum Non–Repetitive Surge Current
Figure 5. Thermal Response
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5
TYPICAL TRIGGER CHARACTERISTICS
Figure 6. Typical Gate Trigger Current
versus Junction Temperature Figure 7. Typical Gate Trigger Voltage
versus Junction Temperature
Figure 8. Typical Holding Current
versus Junction Temperature
10
1
100
125110806550355-10-25 20
TJ, JUNCTION TEMPERATURE (°C)
IGT, GATE TRIGGER CURRENT (mA)
-40 95
VGT
125110958050355-40
0.8
-10-25 20
TJ, JUNCTION TEMPERATURE (°C)
0.6
0.4
0.2
, GATE TRIGGER VOLTAGE (VOLTS)
1.0
65
0.9
0.7
0.5
0.3
I , HOLDING CURRENT (mA)
H
TJ, JUNCTION TEMPERATURE (°C)
100
10
1
125110958050355-40 -10-25 20 65
2N6504 Series
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6
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–07
ISSUE AA
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.022 0.36 0.55
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
A
K
L
V
GD
N
Z
H
Q
FB
123
4
–T– SEATING
PLANE
S
R
J
U
TC
2N6504 Series
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7
Notes
2N6504 Series
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8
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