DO) =|2 VIOS EE IRF242,243 FIELD EFFECT POWER TRANSISTOR | _ ,cosMrenes 200, 150 VOLTS RDS(ON) = 0.22 0 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear 0.845(21.47) N-CHANNEL CASE STYLE TO-204AE (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) . . gs MAX. =- .358(9.09) MAX applications such as audio amplifiers and servo motors. 065( 68) DIA. D Features 7 TT SEATING PLANE Wi rT + pet 0.063(1.60) O18 ~f fe ES .426(10.82) MIN Polysilicon gate Improved stability and reliability 0.057(1.48) e No secondary breakdown Excellent ruggedness Ultra-fast switching Independent of temperature Voltage controlled High transconductance Low input capacitance Reduced drive requirement Excellent thermal stability Ease of paralleling CASE TEMP. REFERENCE POINT .20(5.00) SOURCE DRAIN 0.182(4.09) oA, 0.16(3.84) 2 HOLES 1,050(26,68) MAX.""| 0.678(17.18) 0.650(16.51) 0.440(11.18) 0.420( 10.67) 1,197(30.40) 1,177(28.90) | 1,873(38.96) MAX, Lge 0:228(5.72) ORAIN 0.208(5.21) (CASB) maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF242 IRF243 UNITS Drain-Source Voltage Vpss 200 150 Volts Drain-Gate Voltage, Ras = MQ VpGrR 200 150 Volts Continuous Drain Current @ To = 25C Ip 16 16 A To = 100C 10 10 A Pulsed Drain Current lom 64 64 A Gate-Source Voltage Ves +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 125 125 Watts Derate Above 25C 1.0 1.0 Ww Operating and Storage Junction Temperature Range Ty, Tsta -55 to 150 ~55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Resc 1.00 1.00 C/W Thermal Resistance, Junction to Ambient Rava 30 30 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds Th 260 260 C (1) Repetitive Rating: Puise width limited by max. junction temperature. 143 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC |sYmMBOL | MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRF242 | BVpss 200 _ Volts (Vgs = OV, Ip = 250 uA) IRF243 150 _ _ Zero Gate Voltage Drain Current Ipss (Vps = Max Rating, Vgg = OV, Tc = 25C) _ 250 uA (Vps = Max Rating, 0.8, Vag = OV, Tc = 125C) 1000 Ca SO tee Current less _ _ +100 nA on characteristics Gate Threshold Voltage To = 26C | Vestn) 2.0 4.0 Volts (Vos = V@s. Ip = 250 wA) On-State Drain Current | 16 _ _ A (Vas = 10V, Vps = 10V) D(ON) Static Drain-Source On-State Resistance (Vgg = 10V, Ip = 10A) Rps(ON) _ 0.18 0.22 Ohms Forward Transconductance (Vps = 10V, Ip = 10A) Ofs 48 6.0 _ mhos dynamic characteristics Input Capacitance Ves = OV Ciss _ 1400 1600 pF Output Capacitance Vos = 25V Coss _ 310 750 pF Reverse Transfer Capacitance f=1MHz Crss _ 65 300 pF switching characteristics Turn-on Delay Time Vos = 90V ta(on) _ 20 _ ns Rise Time Ip = 10A, Ves = 15V tr _ 40 _ ns Turn-off Delay Time RGeEN = 509, Reg = 12.50 | taiofty _ 60 ns Fail Time (Res (EQuIv.) = 10) tt _ 30 ns source-drain diode ratings and characteristics* Continuous Source Current Is _ _ 16 A Pulsed Source Current Ism _ _ 64 A Diode Forward Voltage _ 1.0 1 Volt (To = 25C, Vas = OV, Is = 16A) Vsp 9 ous Reverse Recovery Time ter _ 330 _ ns (lg = 18A, dl,/dt = 100A/usec, Tc = 125C) Orr 3.5 _ uC *Pulse Test: Pulse width <= 300 ys, duty cycle = 2% 800 600 400 200 Ip, ORAIN CURRENT (AMPERES) OPERA IN THIS AREA MAY BE LIMITED BY Rogion) | i SINGLE PULSE T= 26C 1 2 4 6 810 20 40 60 80100 Vos, ORAIN-~-SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA IRF243 IRF 242 1Oms 200 CONDITIONS: DS(ON) CONDITIONS: Ip = 10 A, Vgg = 10V V@S(TH) CONDITIONS: Ip = 250uA, Vag = Vag Rosiony AND Vegrru) NORMALIZED 0 400 600 1000 ~40 0 40 80 420 160 Ty, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rogjon, AND Vegitu) VS. TEMP. 144