©2003 Fairchild Semiconductor Corporation
A ugust 2003
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH20N6S2, FGP20N6S2, FGB20N6S2, are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge and plateau voltage and high
avalanche capability (UIS). These LGC devices shorten
delay times, and reduce the power requirement of the gate
drive. These devices are ideally suited for high voltage
switched mode power supply applications where low
conduction loss, f ast switching times and UIS capability are
essential. SMPS II LGC devices have been specially
designed for :
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
Formerly Developmental Type TA49330.
Features
• 100kHz Operation at 390V, 7A
• 200kHZ Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . 85ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 30nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
• Low Conduction Loss
•Low E
on
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol Parameter Ratings Units
BVCES Collector to Emitter Breakdown Voltage 600 V
IC25 Collect or Current Continuous , TC = 25°C 28 A
IC110 Collect or Current Continuous, TC = 110°C 13 A
ICM Collector Current Pulsed (Note 1) 40 A
VGES Gate to Emitter Voltage Continuous ±20 V
VGEM Gate to Emitter Voltage Pulsed ±30 V
SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2 35 at 600V A
EAS Pulsed Avalanche Energy, ICE = 7.0A, L = 4mH, VDD = 50V 100 mJ
EARV Pulsed Avalanche Energy, ICE = 7.0A, L = 4mH, VDD = 50V 100 mJ
PDPower Dissipation Total TC = 25°C 125 W
Power Dissipation Derating TC > 25°C 1.0 W/°C
TJOperating Junction Temperature Range -55 to 150 °C
TSTG Storage Junction Temperature Range -55 to 150 °C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width l imi ted by maximum junct ion t em perat ure.
Package Symbol
C
E
G
TO-247 ECGTO-263AB
TO-220AB ECG
E
G
COLLECTOR
(Flange)
COLLECTOR
(Back-Metal)
©2003 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
Package Marking and Ordering Information
Electrical Characteristics TJ = 25°C unless otherwise noted
Off State Characteristics
On State Charac t eris ti cs
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
20N6S2 FGH20N6S2 TO-247 Tube N/A 30 Units
20N6S2 FGP20N6S2 TO-220AB Tube N/A 50 Units
20N6S2 FGB20N6S2 TO-263AB Tube N/A 50 Units
20N6S2 FGB20N6S2T TO-263AB 330mm 24mm 800 Units
Symbol Parameter Test Conditions Min Typ Max Units
BVCES Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0 600 - - V
BVECS Emitter to Collector Breakdown Voltage IC = -10mA, VGE = 0 20 - - V
ICES Collector to Emitter Leakage Current VCE = 600V TJ = 25°C - - 250 µA
TJ = 125°C--2.0mA
IGES Gate to Emitter Leakage Current VGE = ± 20V - - ±250 nA
VCE(SAT) C ollector to Emitter Saturation Voltage IC = 7.0A,
VGE = 15V TJ = 25°C-2.22.7V
TJ = 125°C-1.92.2V
QG(ON) Gate Charge IC = 7.0A,
VCE = 300V VGE = 15V - 30 36 nC
VGE = 20V - 38 45 nC
VGE(TH) Gate to Emitter Threshol d Voltage IC = 250µA, VCE = 600V 3.5 4.3 5.0 V
VGEP Gate to Emitter Plateau Voltage IC = 7.0A, VCE = 300V - 6.5 8.0 V
SSOA Switching SOA TJ = 150°C, RG = 25Ω, VGE =
15V , L = 0.5mH, Vce = 600V 35 - - A
td(ON)I Current Turn-On Delay Time IGBT and Diode at TJ = 25°C,
ICE = 7A,
VCE = 390V,
VGE = 15V,
RG = 25Ω
L = 0.5mH
Test Circuit - Figure 20
-7.7-ns
trI Current Rise Time - 4.5 - ns
td(OFF)I Current Turn-Off Delay Time - 87 - ns
tfI Current Fall Time - 50 - ns
EON1 Turn-On Energy (Note 1) - 25 - µJ
EON2 Turn-On Energy (Note 1) - 85 - µJ
EOFF Turn-Off Energy (Note 2) - 58 75 µJ
td(ON)I Current Turn-On Delay Time IGBT and Diode at TJ = 125°C,
ICE = 7A,
VCE = 390V,
VGE = 15V,
RG = 25Ω
L = 0.5mH
Test Circuit - Figure 20
-7-ns
trI Current Rise Time - 4.5 - ns
td(OFF)I Current Turn-Off Delay Time - 120 145 ns
tfI Current Fall Time - 85 105 ns
EON1 Turn-On Energy (Note 1) - 20 - µJ
EON2 Tur n -On Energy (Note 1) - 125 140 µJ
EOFF Turn-Off Energy (Note 2) - 135 180 µJ
RθJC Ther mal Resistance Junction-Case - - 1.0 °C/W
NOTE:
1. Values for two Turn-O n loss c onditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss
of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ
as the IGBT. The diode type is specified in figure 20.
2. Tu r n-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss star ting at the trailing edge of
the input pulse and ending at the point where the collector cur rent equals zero (ICE = 0A). All devices were tested per
JEDEC Standard No . 24-1 Method for Measurement of P ower De vice Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.
©2003 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
Typical Performance Curves
Figure 1. DC Collector Current vs Case
Temperature Figure 2. Minimum Switching Safe Operating Area
Figure 3. Operating Frequency vs Collector to
Emitter Current Figure 4. Short Circuit Withstand Time
Figure 5. Collector to Emitter On-State Vo ltage Figure 6. Collector to Emitter On-State Voltage
TC, CASE TEMPERATURE (oC)
ICE, DC COLLECTOR CURRENT (A)
50
5
0
10
25 75 100 125 150
30
20
15
25
VGE = 15V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
7000
ICE, COLLECTOR TO EMITTER CURRENT (A)
300 400200100 500 600
0
20
30
15
40 TJ = 150oC, RG = 25Ω, V GE = 15V, L = 500µH
5
10
35
25
fMAX, OPERATING FREQUENCY (kHz)
1
ICE, COLLECTOR TO EMITTER CURRENT (A)
20
400
2010
700
100
TJ = 125oC, RG = 25Ω, L = 500µH, VCE = 390V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RØJC = 0.27oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON2 + EOFF)
VGE = 15V
TC = 75oC
VGE = 10V
VGE, GATE TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
tSC, SHORT CIRCUIT WITHSTAND TIME (µs)
91112
10
6
90
150
13 14
12
8
60
120
180
210
10 15
4
2
tSC
ISC
VCE = 390V, RG = 25Ω, TJ = 125oC
0.50 1.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
2
4
1.25 2.0 2.25
8
6
14
TJ = 25oC
0.75
TJ = 150oC
12
1.5 1.75
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 15V
TJ = 125oC
10
2.5 2.75
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0.50 1.0 1.5 2.0 2.50.75
TJ = 150oC
1.751.25
TJ = 25oC
2.25
0
2
4
8
6
14
12
10
TJ = 125oC
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 10V
©2003 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current Figure 12. Fall Time vs Collector to Emitter
Current
Typical Performance Curves (Continued)
EON2, TURN-ON ENERGY LOSS ( µJ)
150
ICE , COLLECTOR TO EMITTER CURRENT (A)
100
200
0
400
246810 140
300
250
350
50
TJ = 25oC, TJ = 125oC, VGE = 10V
12
TJ = 25oC, TJ = 125oC, VGE = 15V
RG = 25Ω, L = 500µH, VCE = 390V
EOFF TURN-OFF ENERGY LOSS (µJ)
ICE, COLLECTOR TO EMITTER CURRENT (A)
TJ = 125oC, VGE = 10V, VGE = 15V
TJ = 25oC, VGE = 10V, VGE = 15V
246810 14012
150
100
200
0
350
300
250
50
RG = 25Ω, L = 500µH, VCE = 390V
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(ON)I, TURN-ON DELAY TIME (ns)
6
7
8
9
10
2 4 6 8 10 140
TJ = 25oC, TJ = 125oC, VGE = 15V
TJ = 25oC, TJ = 125oC, V GE = 10V
11
12
13
12
RG = 25Ω, L = 500µH, VCE = 390V
ICE, COLLECTOR TO EMITTER CURRENT (A)
trI, RISE TIME (ns)
TJ = 25oC, TJ = 125oC, VGE = 10V
TJ = 25oC, TJ = 125oC, VGE =15V
2 4 6 8 10 14012
0
5
10
15
20
25
30
35 RG = 25Ω, L = 500µH, VCE = 390V
80
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(OFF)I, TURN-OFF DELAY TIME (ns)
140
120
100
VGE = 10V, VGE = 15V, TJ = 25oC
VGE = 10V, VGE = 15V, TJ = 1 2 5oC
2 4 6 8 10 14012
RG = 25Ω, L = 500µH, VCE = 390V
ICE, COLLECTOR TO EMITTER CURRENT (A)
tfI, FALL TIME (ns)
TJ = 25oC, VGE = 10V or 15V
TJ = 125oC, VGE = 10V or 15V
2 4 6 8 10 14012
60
40
120
100
80
RG = 25Ω, L = 500µH, VCE = 390V
©2003 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
Figure 13. Transfer Characteristic Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage Figure 18. Collector to Emitter On-State V oltage vs
Gate to Emitter Voltage
Typical Performance Curves (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
20
40
VGE, GATE TO EMITTER VOLTAGE (V)
60
120
TJ = 125oC
TJ = -55oC
100
80
TJ = 25oC
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VCE = 10V
6 8 10 12 14 164
VGE, GATE TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
IG(REF) = 1mA, RL = 42.6Ω, TJ = 25oC
VCE = 200V
VCE = 600V
VCE = 400V
5 10152025 35030
6
4
8
0
16
12
10
14
2
TC, CASE TEMPERATURE (oC)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
RG = 25Ω, L = 500µH, VCE = 390V, VGE = 15V
ICE = 14A
ETOTAL = EON2 + EOFF
ICE = 7A
ICE = 3A
0.2
0
0.8
0.6
0.4
5025 75 100 125 150
RG, GATE RESISTANCE (Ω)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ETOTAL = EON2 + EOFF
TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V
0.1
0.05
10
1ICE = 14A
1 10 100 1000
ICE = 7A
ICE = 3A
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
CRES
0 1020304050
0.0
0.4
1.2
0.8
FREQUENCY = 1MHz
COES
CIES
60 70 80 90 100
0.2
0.6
1.0
VGE, GATE TO EMITTER VOLTAGE (V)
6
2.0 9
2.2
2.6
2.4
8101112 16
2.8
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250µs, TJ = 25oC
3.6
7131415
DUTY CYCLE < 0.5%
ICE = 14A
5
ICE = 3A
ICE = 7A
3.0
3.2
3.4
©2003 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
Figure 19. IGBT Normalized Transient Therm al Impe danc e, Junc tion to Case
Typical Performance Curves (Continued)
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
JC
, NORMALI Z ED T HERMAL RESPO NSE
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.10
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
SINGLE PULSE
0.50
0.20
0.05
0.02
0.01
Test Circuit and Waveforms
Figure 20. Inductive Switching Test Circuit Figure 21. Switching T est Wav eform s
R
G
= 25
Ω
L = 500
µ
H
V
DD
= 390V
+
-
FGH20N6S2D
DIODE TA49469
FGH20N6S2
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
©2003 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
Handling Precautions for IGBTs
Insulate d G at e Bi polar Transi s to rs are su sceptible to
gate-ins ul at ion damag e by the electrostat ic
discharge of energy through the devices. When
handling these devices, care should be exer cised to
assure that t he st at i c ch arge built in the handler’s
body capacitance is not discharge d th ro ugh the
device. With proper handling an d applicatio n
procedu res, however, IGBTs are currently be in g
extensively used in prod uct ion by numerous
equipment manufacturers in military, industrial and
consumer appli cations, with virtually no da m age
problems due to el ectrost atic di scharge. IGBTs can
be handle d safely if the followin g ba si c pr ecautions
are taken:
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conduc-
tive material such as “ECCOSORBD™ LD26” or
equivalent.
2. When de v ices are re mo v ed b y ha nd fr om th eir
carriers, the hand being used should be
grounded by any suitable me ans - for example,
with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should ne ver be inserted into or removed
from circu its w it h power on.
5. Gate Voltage Rating - Never exceed the gate-
voltage rating of VGEM. Exceeding the rated V GE
can result in permanent damage to the oxide
la yer in the gate region.
6. Gate Termination - The gates of these devices
are essentially c apa cit ors . Circuits th at leave the
gate open-circuited or floating should be avoided.
These conditions can result in turn-on of the
device due to voltage buildup on the i nput
capacitor due to le akage cur re nt s or pickup.
7. Gate Pr otecti on - These devices do not have an
inter nal monolithic Zener di ode from ga te to
emitter. If gate protection is req ui re d an external
Zener is re co mmended.
Operating Frequency Information
Operating fr equ ency information for a typical device
(Figure 3) is presented as a guide for estimating
device performanc e for a specifi c ap pl i cati on. Othe r
typica l fre quency vs colle ct or current (ICE) plots are
possible usin g the i nformation show n for a typical
unit in Figur es 5, 6, 7, 8, 9 and 1 1. The operating
frequency plot (Figure 3) of a typical device shows
fMAX1 or fMAX2; whichever is smaller at each point.
The informat i on i s ba sed on mea surement s of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(t d(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held
to 10 % of the o n-state ti me for a 50% d u ty factor.
Other definitions are possible. td(OFF)I and td(ON)I are
defined in Figure 21. Device turn- of f de lay can
establish an ad ditional freq uency limi ting condition
f or an appli catio n oth er than TJM. td(OFF)I is impo rtant
when con t ro lling output r i pple und er a ligh tly loaded
condition.
fMAX2 is defi ned by f MAX2 = (PD - PC)/(EOFF + EON2).
The allo wab le di ssipation (PD) is d efin e d b y
PD=(T
JM -T
C)/RθJC. The sum of device switching
and conduction losses must not exceed PD. A 5 0%
duty factor was used (Figure 3) and the conduction
losses (PC) are approxi mated by PC=(V
CE xI
CE)/2.
EON2 and EOFF are defined in the switchin g
waveforms shown in Figure 21. EON2 is the integral
of the instantaneo us power loss (ICE x VCE) during
turn-on and EOFF is the integral of the instantaneous
power loss (ICE xV
CE) during turn-off. All tail losses
are includ ed in the calcul ation for EOFF; i.e., th e
collecto r c urrent equa ls zero (ICE = 0)
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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Across the board. Around the world.™
The Power Franchise™
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