T4-LDS-0056-2, Rev. 1 (121223) ©2012 Microsemi Corporation Page 1 of 8
JANS 2N3501UB
compliant
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/366
Qualified Levels:
JANSM, JANSD,
JANSP, JANSL, an d
JANSR
DESCRIPTION
This family of JANS 2N3501, epitaxial, planar transistors are military qualified in five RHA
(Radiation Hardness Assurance) levels for high-reliability applications. These devices are
also available in TO-5 and low profile TO-39 packaging. Microsemi also offers numerous
other transistor products to meet higher and lower power ratings with various switching speed
requirements in both through-hole and surface-mount packages.
UB Package
Also available in:
TO-5 package
(long-leaded)
2N3498L – 2N3501L
TO-39 (TO-205AD)
package
(leaded)
2N3498 – 2N3501
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• Surface mount equivalent of JEDEC regist ered 2N 350 1 number.
• RHA level JAN qualifications per MIL-PRF-19500/366 (see part nomenclature for all options).
• RoHS compliant by design.
APPLICA TIONS / BENEFITS
• General purpose transistors for medium power applications requiring high frequency switching.
• Low profile ceramic package.
• Lightweight.
• Military and other high-reliability applicat ions.
MAXIMUM RATINGS @ TC = +25 ºC unless otherwise noted
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage
V
CEO
150
V
Collector-Base Voltage VCBO 150 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current
I
C
300
mA
Thermal Resi stan ce Jun cti on-to-Ambient
R
ӨJA
325
oC/W
Total Power Dissipation
@ TA = +25 °C
(1)
@ TSP = +25 °C (2) PT 0.5
1.5 W
Operating & Storage Junction Temperature Range
T
J
, T
stg
-65 to +200
°C
Notes: 1. See figure 1.
2. See figure 2.
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JANS 2N3501UB
MECHANICAL and PACKAGING
• CASE: Ceramic.
• TERMINALS: Gold plating over nickel under plate.
• MARKING: Part number, date code, manufacturer’s ID.
• TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities.
• WEIGHT: < 0.04 Grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JANSM 2N3501 UB
Reliability Level
JANSM = 3K Rads (Si)
JANSD = 10K Rads (Si)
JANSP = 30K Rads (Si)
JANSL = 50K Rads (Si)
JANSR = 100K Rads (Si)
Surface Mount pack ag e
JEDEC type number
SYMBOLS & DEFINITIONS
Symbol
Definition
Cobo
Common-base open-circuit output capacitance
ICEO
Collector cutoff current, base open
ICEX
Collector cut of f curr ent, circuit bet ween bas e and emitter
IEBO
Emitter cutoff current, collector open
hFE
Common-emitter static forward current transfer ratio
VCEO
Collector-emitter voltage, base open
VCBO
Collector-emitter voltage, emitter open
VEBO
Emitter-base voltage, collector open
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JANS 2N3501UB
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
Parameter s / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mA, pulsed
V
(BR)CEO
150
V
Collector-Base Cutoff Current
VCB = 75 V
VCB = 150 V
ICBO
50
10
nA
µA
Emitter-Base Cutoff Current
VEB = 4.0 V
VEB = 6.0 V
IEBO
25
10
nA
µA
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 0.1 mA, VCE = 10 V
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V
IC = 300 mA, VCE = 10 V
hFE
35
50
75
100
20
300
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 150 mA, IB = 15 mA
VCE(sat)
0.2
0.4
V
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 150 mA, IB = 15 mA
VBE(sat)
0.8
1.2
V
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
IC = 20 mA, VCE = 20 V, f = 100 MHz |hfe| 1.5 8.0
Output Capac ita nc e
VCB = 10 V, IE = 0,
100 kHz < f < 1.0 MHz
Cobo
8.0
pF
Input Capacitance
VEB = 0.5 V, IC = 0, 100 kHz < f < 1.0 MHz
Cibo
80
pF
(1) Pulse Test: pulse width = 300 µs, duty cycle < 2.0%.
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JANS 2N3501UB
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time
VEB = 5 V; IC = 150 mA; IB1 = 15 mA ton
115
ns
Turn-Off Time
IC = 150 mA; IB1 = IB2 = 15 mA toff
1150
ns
SAFE OPERATING AREA (See SOA figure and reference MIL-STD-750 method 3053)
DC Tests
TC = +25 oC, tr > 10 ns; 1 Cycle, t = 1.0 s
Test 1
VCE = 10 V, IC = 113 mA
Test 2
VCE = 50 V, IC = 23 mA
Test 3
VCE = 80 V, IC = 14 mA
Clamped Switching
TA = +25 oC
Test 1
IB = 50 mA, IC = 300 mA
Collector to Emitter Voltage VCE (Volts)
Maximum Safe Operating Area
Collector Current I
C
(Milliamperes)
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JANS 2N3501UB
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
POST RADIATION ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
IC = 10 mA
V(BR)CEO
150
V
Collector-Base Cutoff Current
ICBO
V
CB
= 150 V
VCB = 75 V
20
100
µA
nA
Collector to Emitter Cutoff
ICEO
2 µA
VCE = 120 V
Emitter-Base Cutoff Current
IEBO
nA
µA
V
EB
= 4.0 V
VEB = 6.0 V
50
20
Collector-Emitter Saturation
Voltage
VCE(sat)
0.23 V
IC = 10 mA, IB = 1.0 mA
Base-Emitter Saturation Voltage
VBE(sat)
V
I
B
= 10 mA, I
B
= 1.0 mA
IB = 150 mA, IB = 15 mA
0.92
1.38
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JANS 2N3501UB
GRAPHS
Tc (°C) (Case)
FIGURE 1
Derating for all devices (RθJSP) H
Tc (°C) (Case)
FIGURE 2
Derating for all devices (RθJA)
DC Operation Maximum Rating (W)
DC Operation Maximum Rating (W)
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JANS 2N3501UB
GRAPHS
Time (s)
FIGURE 3
Thermal impedance graph (RθJSP)
Theta (oC/W)
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JANS 2N3501UB
PACKAGE DIMENSIONS
Symbol
Dimensions
Note
Symbol
Dimensions
Note
Inch
Millimeters
Inch
Millimeters
Min
Max
Min
Max
Min
Max
Min
Max
BH
.046
.056
1.17
1.42
LS1
.036
.040
0.91
1.02
BL
.115
.128
2.92
3.25
LS2
.071
.079
1.80
2.01
BW
.085
.108
2.16
2.74
LW
.016
.024
0.41
0.61
CL
.128
3.25
r
.008
0.20
CW
.108
2.74
r1
.012
0.31
LL1
.022
.038
0.56
0.97
r2
.022
0.56
LL2
.017
.035
0.43
0.89
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metallized areas.
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
Lid
