D45H8 / NZT45H8 PNP Power Amplifier Description This device is designed for power amplifier, regulator, and switching circuits where speed is important. Sourced from process 5Q. C B E C E C SOT-223 TO-220 Figure 1. D45H8 Device Package B Figure 2. NZT45H8 Device Package Ordering Information Part Number Marking Package Packing Method D45H8 D45H8 TO-220 3L Rail NZT45H8 45H8 SOT-223 4L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol VCEO IC TJ, TSTG Value Unit Collector-Emitter Voltage Parameter -60 V Collector Current - Continuous -8 A -55 to +150 C Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. (c) 1997 Fairchild Semiconductor Corporation D45H8 / NZT45H8 Rev. 2.2 www.fairchildsemi.com D45H8 / NZT45H8 -- PNP Power Amplifier April 2015 Values are at TA = 25C unless otherwise noted. Symbol PD Max. Parameter Unit D45H8 NZT45H8 Total Device Dissipation 60.0 1.5 W Derate Above 25C 480 12 mW/C RJC Thermal Resistance, Junction-to-Case 2.1 RJA Thermal Resistance, Junction-to-Ambient 62.5 C/W C/W 83.3 Notes: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25C unless otherwise noted. Symbol V(BR)CEO Parameter Conditions Collector-Emitter Breakdown Voltage IC = -100 mA, IB = 0 Min. Max. Unit -60 V ICBO Collector Cut-Off Current VCB = -60 V, IE = 0 -10 A IEBO Emitter Cut-Off Current VEB = -5.0 V, IC = 0 -100 A hFE DC Current Gain -1.0 V VCE(sat) IC = -2.0 A, VCE = -1.0 V 60 IC = -4.0 A, VCE = -1.0 V 40 Collector-Emitter Saturation Voltage IC = -8.0 A, IB = -0.4 A VBE(sat) Base-Emitter Saturation Voltage IC = -8.0 A, IB = -0.8 A VBE(on) Base-Emitter On Voltage IC = -10 mA, VCE = -2.0 V -0.54 Current Gain - Bandwidth Product IC = -500 mA, VCE = -10 V 40 fT (c) 1997 Fairchild Semiconductor Corporation D45H8 / NZT45H8 Rev. 2.2 -1.5 V -0.65 V MHz www.fairchildsemi.com 2 D45H8 / NZT45H8 -- PNP Power Amplifier Thermal Characteristics(3) VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN 200 Vce = 5V 180 160 0.8 125 C 140 120 25 C 125 C 80 60 0.2 - 40 C 40 0.01 0.02 0.05 0.1 0.2 0.5 1 2 I C - COLLECTOR CURRENT (A) 5 10 = 10 1.4 1.4 1 I C - COLLECTOR CURRENT (A) 10 15 VCE = 5V 1.2 1.2 1 - 40 C 0.8 25 C 1 - 40 C 0.8 125 C 0.6 0.4 0.1 - 40 C 0 0.1 Figure 4. Collector-Emitter Saturation Voltage vs. Collector Current VBE(ON)- BASE-EMITTER ON VOLTAGE (V) 1.6 25 C 0.4 100 VBESAT- BASE-EMITTER VOLTAGE (V) = 10 0.6 Figure 3. Typical Pulsed Current Gain vs. Collector Current 25 C 0.6 1 I C - COLLECTOR CURRENT (A) 125 C 0.4 0.1 10 1 I C - COLLECTOR CURRENT (A) 10 Figure 6. Base-Emitter On Voltage vs. Collector Current Figure 5. Base-Emitter Saturation Voltage vs. Collector Current ICBO- COLLECTOR CURRENT (nA) 1 100 V CB = 50V 10 1 0.1 0.01 25 50 75 100 125 T A - AMBIENT TEMPERATURE (C) 150 Figure 8. Safe Operating Area TO-220 Figure 7. Collector Cut-Off Current vs. Ambient Temperature (c) 1997 Fairchild Semiconductor Corporation D45H8 / NZT45H8 Rev. 2.2 www.fairchildsemi.com 3 D45H8 / NZT45H8 -- PNP Power Amplifier Typical Performance Characteristics Figure 10. Maximum Power Dissipation vs. Ambient Temperature PD - POWER DISSIPATION (W) Figure 9. Maximum Power Dissipation vs. Case Temperature 1.5 1.25 1 SOT-223 0.75 0.5 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 Figure 11. Power Dissipation vs. Ambient Temperature Figure 12. Thermal Response in TO-220 Package (c) 1997 Fairchild Semiconductor Corporation D45H8 / NZT45H8 Rev. 2.2 www.fairchildsemi.com 4 D45H8 / NZT45H8 -- PNP Power Amplifier Typical Performance Characteristics (Continued) D45H8 / NZT45H8 -- PNP Power Amplifier Physical Dimensions Figure 13. TO-220, MOLDED, 3-LEAD, JEDEC VARIATION AB (c) 1997 Fairchild Semiconductor Corporation D45H8 / NZT45H8 Rev. 2.2 www.fairchildsemi.com 5 D45H8 / NZT45H8 -- PNP Power Amplifier Physical Dimensions (Continued) Figure 14. MOLDED PACKAGE, SOT-223, 4-LEAD (c) 1997 Fairchild Semiconductor Corporation D45H8 / NZT45H8 Rev. 2.2 www.fairchildsemi.com 6 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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