B120/B - B160/B
Document number: DS13002 Rev. 16 - 2 1 of 5
www.diodes.com September 2010
© Diodes Incorporated
B120/B - B160/B
1.0A SURFACE MOUNT SCHOTT KY BA R RIER RE CTIFIER
Features
Guard Ring Die Construction for Transient Protect ion
Ideally Suited for Automated Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 30A Peak
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
Lead Free Finish/RoHS Compliant (Note 1)
Green Molding Compound (No Halogen and Antimony)
(Note 2)
Mechanical Data
Case: SMA/SMB
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Lead Free Plating (Matte Tin Finish). Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
Weight: SMA 0.064 grams (approximate)
SMB 0.093 grams (approximate)
Ordering Information (Note 3)
Part Number Case Packaging
B1XX-13-F SMA 5000/Tape & Reel
B1XXB-13-F SMB 3000/Tape & Reel
*xx = Device Type, e.g. B120-13-F (SMA Package); B120B-13-F (SMB Package).
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
2. Product manufactured with Data Code 0924 (week 24, 2009) and newer are built with Green Molding Compound.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Top View Bottom View
Green
B1X0 = Product type marking code, ex: B120 (SMA package)
B1X0B = Product type marking code, ex: B160B (SMB package)
= Manufacturers’ code marking
YWW = Date code marking
Y = Last digit of year (ex: 2 for 2002)
WW = Week code (01 to 53)
YWW
B1X0(B)
B120/B - B160/B
Document number: DS13002 Rev. 16 - 2 2 of 5
www.diodes.com September 2010
© Diodes Incorporated
B120/B - B160/B
Maximum Ratings @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol B120/B B130/B B140/B B150/B B160/B Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR 20 30 40 50 60 V
RMS Reverse Voltage VR
(
RMS
)
14 21 28 35 42 V
Average Rectified Output Current @ TT = 130°C IO 1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load IFSM 30 A
Thermal Characteristics
Characteristic Symbol B120/B B130/B B140/B B150/B B160/B Unit
Typical Thermal Resistance Junction to Terminal (Note 4) R
θ
JT 20 °C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop B120/B, B130/B, B140/B
B150/B, B160/B VF -
- -
- 0.5
0.7 V IF = 1.0A
IF = 1.0A
Leakage Current (Note 5) IR -
- -
- 0.5
10 mA @ Rated VR, TA = 25°C
@ Rated VR, TA = 100°C
Total Capacitance CT - - 110 pF VR = 4V, f = 1MHz
Notes: 4. Thermal Resistance: Junction to terminal, unit mounted on PC board with 5.0 mm 2 (0.013 mm thick) copper pads as heat sink.
5. Short duration pulse test used to minimize self-heating effect.
0.1
1.0
10
0.2 0.4 0.6 0.8 1.0 1.2
I, I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typi cal Forward C haracter istics - B12 0/ B thr u B 140/B
F
T = +25C
A
°
T = +75C
A
°
T = +125 C
A
°
T = -25C
A
°
0.01
0.1
1.0
10
0 0.2 0.4 0.6 0.8 1.0
I, INS
T
AN
T
ANE
O
U
S
F
O
R
WA
R
D
C
U
R
R
EN
T
(A)
F
V , INST A NTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics - B150/B thru B160/B
F
I Pulse Width = 300 ms
F
T = 125ºC
A
T = 25ºC
A
B120/B - B160/B
Document number: DS13002 Rev. 16 - 2 3 of 5
www.diodes.com September 2010
© Diodes Incorporated
B120/B - B160/B
100
10
1
0.1
0.01
1,000
10,000
020 40
V , INSTANTANEOUS REVERSE VOL TAGE (V)
Fig. 3 Typical Reverse Characteristics, B120/B thru B140/B
R
10 30 50
I , INST ANTANEOUS REVERSE CURRENT (µA)
R
100
10
1
0.1
1,000
10,000
02040 60 70
V , INSTANT ANEOUS REVERSE VOLT AGE (V)
Fig. 4 Typical Reverse Characteristics, B150/B thru B160/B
R
10 30 50
I , INST ANTANEOUS REVERSE CURRENT (µA)
R
10
100
1,000
0.1 1 10 100
C
,
T
O
T
AL
C
A
P
A
C
I
T
AN
C
E (p
F
)
T
V , DC REVERSE VOLTAGE (V)
Fig. 5 Total Capacitance vs. Reverse Voltage
R
0
0.5
1.0
25 50 75 100 125 150
I AVE
R
A
G
E
R
E
C
T
I
F
IED
C
U
R
R
E
N
T
(A)
O,
T , TERMINAL TEMPERATURE (ºC)
Fig. 6 Forward Current Derating Curve
T
10
20
30
40
0110 100
I,
P
EAK
F
O
R
WA
R
D S
U
R
G
E
C
U
R
R
E
N
T
(A)
FSM
Fig. 7 Max Non-Repetitive Peak Forward Surge Current
NUMBER OF CYCLES AT 60 Hz
Single Half Sine-Wave
B120/B - B160/B
Document number: DS13002 Rev. 16 - 2 4 of 5
www.diodes.com September 2010
© Diodes Incorporated
B120/B - B160/B
Package Outline Dimensions
Suggested Pad Layout
SMA
Dim Min Max
A 2.29 2.92
B 4.00 4.60
C 1.27 1.63
D 0.15 0.31
E 4.80 5.59
G 0.05 0.20
H 0.76 1.52
J 2.01 2.30
All Dimensions in mm
SMB
Dim Min Max
A 3.30 3.94
B 4.06 4.57
C 1.96 2.21
D 0.15 0.31
E 5.00 5.59
G 0.05 0.20
H 0.76 1.52
J 2.00 2.50
All Dimensions in mm
SMA
Dimensions Value (in mm)
Z 6.5
G 1.5
X 1.7
Y 2.5
C 4.0
SMB
Dimensions Value (in mm)
Z 6.7
G 1.8
X 2.3
Y 2.5
C 4.3
A
B
C
D
G
H
E
J
B120/B - B160/B
Document number: DS13002 Rev. 16 - 2 5 of 5
www.diodes.com September 2010
© Diodes Incorporated
B120/B - B160/B
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