Advance Technical Information High Voltage Power MOSFET IXTF1N250 VDSS = 2500V ID25 = 1A RDS(on) 40 N-Channel Enhancement Mode (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VDSS TJ = 25C to 150C 2500 V VDGR TJ = 25C to 150C, RGS = 1M 2500 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 1 A IDM TC = 25C, Pulse Width Limited by TJM 6 A PD TC = 25C 110 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 C C 20..120 / 4.5..27 Nm/lb.in. z 2500 V~ z 5 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Force VISOL 50/60Hz, 1min Maximum Ratings Weight 1 2 5 1 = Gate 2 = Source Isolated Tab 5 = Drain Features z z Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V Electrical Isolation Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages z Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 2500 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = 0.8 * VDSS, VGS= 0V Note 2, TJ = 125C RDS(on) VGS = 10V, ID = 0.5 * ID25, Note 1 (c) 2009 IXYS CORPORATION, All Rights Reserved z z Easy to Mount Space Savings High Power Density V 4.0 V 100 nA 25 25 A A 40 Applications z z z High Voltage Power Supplies Capacitor Discharge Pulse Circuits DS100222(12/09) IXTF1N250 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 50V, ID = 0.5 * ID25, Note 1 1.0 Ciss Coss 1.8 mS 1660 pF VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = ID25 RG = 5 (External) Qg(on) Qgs ISOPLUS i4-PakTM (HV) Outline 77 pF 23 pF 69 ns 25 ns 132 ns 39 ns 41 nC 8 nC 16 nC VGS = 10V, VDS = 600V, ID = 0.5 * ID25 Qgd Pin 1 = Gate Pin 2 = Source Pin 3 = Drain Tab 4 = Isolated 1.13 C/W RthJC RthCS C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, pulse width limited by TJM VSD IF = 1A, VGS = 0V, Note 1 trr IF = 1A, -di/dt = 100A/s, VR = 200V Notes 2.5 1.5 A 6 A 1.5 V s 1. Pulse test, t 300s, duty cycle, d 2%. 2. Device must be heatsunk for high-temp IDSS measurement to avoid thermal runaway. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTF1N250 Fig. 2. Output Characteristics @ T J = 125C Fig. 1. Output Characteristics @ T J = @ 25C 1.0 0.50 VGS = 10V 0.9 0.8 0.40 5V 4V 0.35 ID - Amperes 0.7 ID - Amperes VGS = 10V 5V 0.45 0.6 0.5 0.4 0.3 0.30 0.25 0.20 0.15 0.10 0.2 4V 0.1 0.05 0.00 0.0 0 5 10 15 20 25 30 35 40 0 45 5 10 15 20 Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs. Junction Temperature 30 35 40 45 Fig. 3. RDS(on) Normalized to ID = 0.5A Value vs. Drain Current 2.6 2.4 VGS = 10V 2.2 1.8 R DS(on) - Normalized 2.2 R DS(on) - Normalized 25 VDS - Volts VDS - Volts I D = 1A 1.4 I D = 0.5A 1.0 TJ = 125C 2.0 1.8 VGS = 10V 1.6 1.4 1.2 0.6 TJ = 25C 1.0 0.8 0.2 -50 -25 0 25 50 75 100 125 0.0 150 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 ID - Amperes TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 0.9 1.2 0.8 0.7 0.8 ID - Amperes ID - Amperes 1.0 0.6 0.6 0.5 0.4 25C TJ = 125C - 40C 0.3 0.4 0.2 0.2 0.1 0 0.0 -50 -25 0 25 50 75 TC - Degrees Centigrade (c) 2009 IXYS CORPORATION, All Rights Reserved 100 125 150 2.8 3.0 3.2 3.4 3.6 3.8 4.0 VGS - Volts 4.2 4.4 4.6 4.8 5.0 IXTF1N250 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 3.0 3.0 TJ = - 40C 2.5 2.5 2.0 2.0 IS - Amperes g f s - Siemens 25C 125C 1.5 1.5 TJ = 125C 1.0 1.0 0.5 0.5 0.0 TJ = 25C 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.3 0.4 0.5 0.6 ID - Amperes Fig. 9. Gate Charge 0.8 0.9 Fig. 10. Capacitance 10 10,000 9 f = 1MHz VDS = 600V I D = 500mA 8 Capacitance - PicoFarads I G = 10mA 7 VGS - Volts 0.7 VSD - Volts 6 5 4 3 2 Ciss 1,000 Coss 100 1 Crss 0 10 0 5 10 15 20 25 QG - NanoCoulombs 30 35 40 45 0 5 10 Fig. 11. Maximum Transient Thermal Impedance 15 20 25 30 35 40 VDS - Volts 10.00 Fig. 11. Maximum Transient Thermal Impedance yufgfuy 3.00 Z(th)JC - C / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_1N250 (5P)12-17-09-B