© 2009 IXYS CORPORATION, All Rights Reserved DS100222(12/09)
High Voltage
Power MOSFET
N-Channel Enhancement Mode
(Electrically Isolated Tab)
IXTF1N250 VDSS = 2500V
ID25 = 1A
RDS(on) ≤≤
≤≤
≤ 40ΩΩ
ΩΩ
Ω
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 2500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ2500 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 1 A
IDM TC= 25°C, Pulse Width Limited by TJM 6A
PDTC= 25°C 110 W
TJ- 55 ... +150 °C
TJM 150 °C
Tstg - 55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Force 20..120 / 4.5..27 Nm/lb.in.
VISOL 50/60Hz, 1min 2500 V~
Weight 5 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250µA 2500 V
VGS(th) VDS = VGS, ID = 250µA 2.0 4.0 V
IGSS VGS = ±20V, VDS = 0V ±100 nA
IDSS VDS = 0.8 • VDSS, VGS= 0V 25 µA
Note 2, TJ = 125°C 25 µA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 40 Ω
1 = Gate 5 = Drain
2 = Source
ISOPLUS i4-PakTM
Isolated Tab
1
5
2
Features
zSilicon Chip on Direct-Copper Bond
(DCB) Substrate
zIsolated Mounting Surface
z2500V Electrical Isolation
zMolding Epoxies meet UL 94 V-0
Flammability Classification
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zHigh Voltage Power Supplies
zCapacitor Discharge
zPulse Circuits
Advance Technical Information
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTF1N250
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 50V, ID = 0.5 • ID25, Note 1 1.0 1.8 mS
Ciss 1660 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 77 pF
Crss 23 pF
td(on) 69 ns
tr 25 ns
td(off) 132 ns
tf 39 ns
Qg(on) 41 nC
Qgs VGS = 10V, VDS = 600V, ID = 0.5 • ID25 8 nC
Qgd 16 nC
RthJC 1.13 °C/W
RthCS 0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 1.5 A
ISM Repetitive, pulse width limited by TJM 6 A
VSD IF = 1A, VGS = 0V, Note 1 1.5 V
trr IF = 1A, -di/dt = 100A/µs, VR = 200V 2.5 µs
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = ID25
RG = 5Ω (External)
ISOPLUS i4-PakTM (HV) Outline
Pin 1 = Gate
Pin 2 = Source
Pin 3 = Drain
Tab 4 = Isolated
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Notes 1. Pulse test, t ≤ 300µs, duty cycle, d ≤ 2%.
2. Device must be heatsunk for high-temp IDSS
measurement to avoid thermal runaway.
© 2009 IXYS CORPORATION, All Rights Reserved
IXTF1N250
Fig. 1. Output Characteristics @ TJ = @ 25ºC
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 5 10 15 20 25 30 35 40 45
VDS - Volts
ID - Amperes
VGS
= 10V
4V
5V
Fig. 2. Output Characteristics @ TJ = 125ºC
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0 5 10 15 20 25 30 35 40 45
VDS - Volts
ID - Amperes
VGS
= 10V
5V
4V
Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
RDS(on) - Normalized
VGS
= 10V
I D = 1A
I D = 0.5A
Fig. 3. RDS(on) Normalized to ID = 0.5A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
ID - Amperes
RDS(on) - Normalized
VGS
= 10V
TJ = 125ºC
TJ = 25ºC
Fig. 6. Input Admittance
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0
VGS - Volts
ID - Amperes
TJ
= 125ºC - 40ºC 25ºC
Fig. 5. Maximum Drain Current vs.
Case Temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTF1N250
IXYS REF: T_1N250 (5P)12-17-09-B
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.10
1.00
10.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - ºC / W
Fig. 11. Maximum Transient Thermal Impedance
yufgfuy
3.00
Fig. 7. Transconductance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
ID - Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSD - Volts
IS - Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 9. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45
QG - NanoCoulombs
VGS - Volts
V
DS
= 600V
I
D
= 500mA
I
G
= 10mA
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
VDS - Volts
Capacitance - PicoFarads
f
= 1MHz
Ciss
Crss
Coss
