FEATURES
• SUPER LOW NOISE FIGURE:
0.45 dB TYP at 12 GHz
• HIGH ASSOCIATED GAIN:
12.5 dB TYP at 12 GHz
• GATE LENGTH: LG = 0.20 µ µ
µ µ
µm
• GATE WIDTH: WG = 200 µµ
µµ
µm
NEC's C TO KA BAND
SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ FET CHIP
NE32500
DESCRIPTION
NEC's NE32500 is a Hetero-Junction FET chip that uses the
junction between Si-doped AlGaAs and undoped InGaAs to
create very high mobility electrons. Its excellent low noise figure
and high associated gain make it suitable for commercial
systems and industrial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
PART NUMBER NE32500
PACKAGE OUTLINE 00 (Chip)
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
NF Noise Figure, VDS = 2 V, IDS = 10 mA, f = 12 GHz dB 0.45 0.55
GAAssociated Gain, VDS = 2 V, IDS = 10 mA, f = 12 GHz dB 11.0 12.5
IDSS Saturated Drain Current, VDS = 2 V,VGS = 0 V mA 20 60 90
gmTransconductance, VDS = 2 V, ID = 10 mA mS 45 60
IGSO Gate to Source Leakage Current, VGS = -3 V µA 0.5 10.0
VGS(off) Gate to Source Cutoff Voltage, VDS = 2 V, ID = 100 µA V -0.2 -0.7 -2.0
RTH (CH-C) Thermal Resistance1 (Channel to Case) °C/W 260
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Note:
1. RF performance is determined by packaging and testing 10 chips per wafer.
Wafer rejection criteria for standard devices is 2 rejects per 10 samples.
California Eastern Laboratories
OUTLINE DIMENSIONS (Units in µm)
CHIP
49.5 43
25
13
76.5
350
100.5
89
25
21
13
25
5.5
36.5
13
25
66
58
38
68
60
46.5
350
Source
Source
Drain
Gate
66
Thickness = 140 µm
Bonding Area
NE32500
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS PARAMETERS UNITS RATINGS
VDS Drain to Source Voltage V 4.0
VGS Gate to Source Voltage V -3.0
IDS Drain Current mA IDSS
PTTotal Power Dissipation2mW 200
TCH Channel Temperature °C 175
TSTG Storage Temperature °C -65 to +175
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Ambient Temperature, TA (°C)
Total Power Dissipation, P
T
(mW)
Noise Figure, NF (dB)
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Note:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. Chip mounted on Alumina heatsink (size: 3 x 3 x 0.6t)
Noise Figure, NF (dB)
Associated Gain, G
A
(dB)
Associated Gain, G
A
(dB)
Drain Current, I
D
(mA)
NOISE FIGURE AND ASSOCIATED GAIN
vs. FREQUENCY
Drain Current, ID (mA)
Frequency, f (GHz)
NOISE FIGURE AND ASSOCIATED GAIN
vs. DRAIN CURRENT
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage, VDS (V)
VDS = 2 V
f = 12 GHz GA
NF
2.0
1.5
1.0
0.5
010 20 30
14
13
12
11
10
VGS = 0 V
-0.2 V
-0.4 V
-0.8 V
-0.6 V
100
80
60
40
20
01.5 3.0
1.0
0.5
0
12 468
10 14 20 30
24
20
16
12
8
4
G
A
NF
V
DS
= 2 V
I
D
= 10 mA
250
200
150
100
50
0
0 50 100 150 200 250
60
40
20
0
-2.0 -1.0 0
V
DS
= 2 V
Gate to Source Voltage, VGS (V)
Drain Current, I
D
(mA)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
1-32
PART IDSS SELECTION (mA)
NE32500 20 to 90 (Standard)
NE32500N 0 to 60
NE32500M 50 to 90
ORDERING INFORMATION
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
NE32500
VDS = 2 V, IDS = 10 mA
FREQUENCY S11 S21 S12 S22
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
0.5 0.999 -4 4.34 177 0.006 82 0.564 -3
1.0 0.998 -7 4.33 174 0.012 84 0.562 -6
2.0 0.996 -14 4.28 168 0.025 81 0.559 -11
3.0 0.992 -20 4.24 163 0.037 76 0.557 -17
4.0 0.976 -28 4.169 158 0.048 71 0.551 -23
5.0 0.962 -36 4.11 152 0.060 66 0.546 -29
6.0 0.962 -42 4.06 148 0.070 62 0.539 -34
7.0 0.943 -48 3.95 143 0.079 58 0.533 -40
8.0 0.928 -55 3.83 139 0.087 55 0.526 -44
9.0 0.920 -60 3.73 134 0.095 51 0.519 -49
10.0 0.900 -67 3.58 129 0.104 47 0.508 -54
11.0 0.881 -72 3.46 126 0.109 43 0.503 -58
12.0 0.869 -77 3.334 122 0.114 40 0.494 -62
13.0 0.856 -82 3.23 118 0.120 37 0.488 -66
14.0 0.839 -86 3.11 115 0.123 34 0.483 -69
15.0 0.831 -91 3.01 112 0.127 32 0.476 -72
16.0 0.818 -96 2.88 108 0.131 29 0.472 -76
17.0 0.804 -99 2.78 105 0.134 27 0.468 -79
18.0 0.796 -103 2.68 103 0.137 24 0.464 -81
19.0 0.784 -106 2.59 100 0.0141 22 0.460 -84
20.0 0.782 -111 2.49 96 0.142 20 0.456 -88
Note:
1. Gain Calculation:
MAG = |S
21
|
|S
12
|K - 1 ).
2
(K ± ∆ = S
11
S
22
- S
21
S
12
When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S
21
|
|S
12
|, K = 1 + | ∆ | - |S
11
| - |S
22
|
222
2 |S
12
S
21
|
,
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE32500
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
6/21/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
