LME49740
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SNAS377B FEBRUARY 2007REVISED APRIL 2013
LME49740 Quad High-Performance, High-Fidelity Audio Operational Amplifier
Check for Samples: LME49740
1FEATURES DESCRIPTION
The LME49740 is part of the ultra-low distortion, low
2 Easily Drives 600Loads noise, high slew rate operational amplifier series
Optimized for Superior Audio Signal Fidelity optimized and fully specified for high-performance,
Output Short Circuit Protection high-fidelity applications. Combining advanced
leading-edge process technology with state-of-the-art
PSRR and CMRR Exceed 120dB (Typ) circuit design, the LME49740 audio operational
SOIC and PDIP Packages amplifiers deliver superior audio signal amplification
for outstanding audio performance. The LME49740
APPLICATIONS combines extremely low voltage noise density
(2.7nV/HZ) with vanishingly low THD+N (0.00003%)
Ultra High-Quality Audio Amplification to easily satisfy the most demanding audio
High-Fidelity Preamplifiers applications. To ensure that the most challenging
High-Fidelity Multimedia loads are driven without compromise, the LME49740
has a high slew rate of ±20V/μs and an output current
State-of-the-Art Phono Pre Amps capability of ±26mA. Further, dynamic range is
High-Performance Professional Audio maximized by an output stage that drives 2kloads
High-Fidelity Equalization and Crossover to within 1V of either power supply voltage and to
Networks within 1.4V when driving 600loads.
High-Performance Line Drivers The LME49740's outstanding CMRR (120dB), PSRR
High-Performance Line Receivers (120dB), and VOS (0.1mV) give the amplifier excellent
operational amplifier DC performance.
High-Fidelity Active Filters The LME49740 has a wide supply range of ±2.5V to
KEY SPECIFICATIONS ±17V. Over this supply range the LME49740’s input
circuitry maintains excellent common-mode and
Power Supply Voltage Range: ±2.5V to ±17V power supply rejection, as well as maintaining its low
THD+N (AV= 1, VOUT = 3VRMS, fIN = 1kHz) input bias current. The LME49740 is unity gain
RL= 2k: 0.00003% (typ) stable. The Audio Operational Amplifier achieves
outstanding AC performance while driving complex
RL= 600: 0.00003% (typ) loads with values as high as 100pF.
Input Noise Density: 2.7nV/Hz (typ) The LME49740 is available in 14-lead narrow body
Slew Rate: ±20V/μs (typ) SOIC and 14-lead PDIP. Demonstration boards are
Gain Bandwidth Product: 55MHz (typ) available for each package.
Open Loop Gain (RL= 600): 140dB (typ)
Input Bias Current: 10nA (typ)
Input Offset Voltage: 0.1mV (typ)
DC Gain Linearity Error: 0.000009%
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 2007–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
-
+
-
+
LME49740
-
+
-
+
10pF
+
+
INPUT
OUTPUT
Note: 1% metal film resistors, 5% polypropylene capacitors
47 k:
3320:
150:
909:
26.1 k:
3.83 k:
100:
150:
22 nF//4.7 nF//500 pF
3320:
47 nF//33 nF
LME49740
LME49740
SNAS377B FEBRUARY 2007REVISED APRIL 2013
www.ti.com
TYPICAL APPLICATION
Figure 1. Passively Equalized RIAA Phono Preamplifier
CONNECTION DIAGRAM
Figure 2. 14-Lead SOIC (D Package)
14-Lead PDIP (NFF Package)
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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ABSOLUTE MAXIMUM RATINGS(1)(2)(3)
Power Supply Voltage
(VS= V+- V-) 36V
Storage Temperature 65°C to 150°C
Input Voltage (V-) - 0.7V to (V+) + 0.7V
Output Short Circuit(4) Continuous
Power Dissipation Internally Limited
ESD Susceptibility(5) 2000V
ESD Susceptibility(6) 200V
Junction Temperature 150°C
Thermal Resistance
θJA (MA) 107°C/W
θJA (NA) 74°C/W
Temperature Range
TMIN TATMAX –40°C TA85°C
Supply Voltage Range ±2.5V VS± 17V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
(2) Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured
specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
Some performance characteristics may degrade when the device is not operated under the listed test conditions.
(3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(4) Amplifier output connected to GND, any number of amplifiers within a package.
(5) Human body model, 100pF discharged through a 1.5kresistor.
(6) Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage and then
discharged directly into the IC with no external series resistor (resistance of discharge path must be under 50).
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ELECTRICAL CHARACTERISTICS(1)(2)
The following specifications apply for VS= ±15V, RL= 2k, fIN = 1kHz, and TA= 25C, unless otherwise specified.
LME49740 Units
Symbol Parameter Conditions (Limits)
Typical(3) Limit(4)(5)
AV= 1, VOUT = 3VRMS % (max)
THD+N Total Harmonic Distortion + Noise RL= 2k0.00003 % (max)
RL= 6000.00003 0.00009
AV= 1, VOUT = 3VRMS
IMD Intermodulation Distortion 0.00005 % (max)
Two-tone, 60Hz & 7kHz 4:1
GBWP Gain Bandwidth Product 55 45 MHz (min)
SR Slew Rate ±20 ±15 V/μs (min)
VOUT = 1VP-P, –3dB
FPBW Full Power Bandwidth referenced to output magnitude 10 MHz
at f = 1kHz
AV= 1, 10V step, CL= 100pF
tsSettling time 0.1% error range 1.2 μs
Equivalent Input Noise Voltage fBW = 20Hz to 20kHz 0.34 0.65 μVRMS
enf = 1kHz 2.7 4.7 nV/Hz
Equivalent Input Noise Density f = 10Hz 6.4 nV/Hz
f = 1kHz 1.6 pA/Hz
inCurrent Noise Density f = 10Hz 3.1 pA/Hz
VOS Offset Voltage ±0.1 ±0.7 mV (max)
Average Input Offset Voltage Drift vs
ΔVOS/ΔTemp 40°C TA85°C 0.2 μV/°C
Temperature
Average Input Offset Voltage Shift vs
PSRR ΔVS= 20V(6) 120 110 dB (min)
Power Supply Voltage fIN = 1kHz 118 dB
ISOCH-CH Channel-to-Channel Isolation fIN = 20kHz 112 dB
IBInput Bias Current VCM = 0V 10 72 nA (max)
Input Bias Current Drift vs
ΔIOS/ΔTemp –40°C TA85°C 0.1 nA/°C
Temperature
IOS Input Offset Current VCM = 0V 11 65 nA (max)
+14.1 (V+)–2.0 V (min)
VIN-CM Common-Mode Input Voltage Range –13.9 (V-)+2.0 V (min)
CMRR Common-Mode Rejection –10V<VCM<10V 120 110 dB (min)
Differential Input Impedance 30 k
ZIN Common Mode Input Impedance –10V<VCM<10V 1000 M
–10V<VOUT<10V, RL= 600140 dB (min)
AVOL Open Loop Voltage Gain –10V<VOUT<10V, RL= 2k140 dB (min)
–10V<VOUT<10V, RL= 10k140 125 dB (min)
RL= 600±13.6 ±12.5 V (min)
VOUTMAX Maximum Output Voltage Swing RL= 2k±14.0 V (min)
RL= 10k±14.1 V (min)
IOUT Output Current RL= 600, VS= ±17V ±26 ±23 mA (min)
+30 mA
IOUT-CC Short Circuit Current –38 mA
fIN = 10kHz
ROUT Output Impedance Closed-Loop 0.01
Open-Loop 13
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
(2) Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured
specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
Some performance characteristics may degrade when the device is not operated under the listed test conditions.
(3) Typical specifications are specified at +25ºC and represent the most likely parametric norm.
(4) Tested limits are specified to AOQL (Average Outgoing Quality Level).
(5) Datasheet min/max specification limits are specified by design, test, or statistical analysis.
(6) PSRR is measured as follows: VOS is measured at two supply voltages, ±5V and ±15V. PSRR = |20log(ΔVOS/ΔVS)|.
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ELECTRICAL CHARACTERISTICS(1)(2) (continued)
The following specifications apply for VS= ±15V, RL= 2k, fIN = 1kHz, and TA= 25C, unless otherwise specified.
LME49740 Units
Symbol Parameter Conditions (Limits)
Typical(3) Limit(4)(5)
CLOAD Capacitive Load Drive Overshoot 100pF 16 %
ISTotal Quiescent Current IOUT = 0mA 18.5 20 mA (max)
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TYPICAL PERFORMANCE CHARACTERISTICS
THD+N vs Output Voltage THD+N vs Output Voltage
VCC = 15V, VEE = –15V, RL= 2kVCC = 17V, VEE = –17V, RL= 2k
Figure 3. Figure 4.
THD+N vs Frequency THD+N vs Frequency
VCC = 15V, VEE = –15V, RL= 2k, VOUT = 3VRMS VCC = 17V, VEE = –17V, RL= 2k, VOUT = 3VRMS
Figure 5. Figure 6.
THD+N vs Frequency THD+N vs Frequency
VCC = 15V, VEE = –15V, RL= 600, VOUT = 3VRMS VCC = 17V, VEE = –17V, RL= 600, VOUT = 3VRMS
Figure 7. Figure 8.
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FREQUENCY (Hz)
CMRR (dB)
10 100 10k 100k1k
-130
-120
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
20 100 1k 10k 20k
-160
-150
-140
-130
-120
-110
-100
-90
-80
-70
-60
PSRR (dB)
FREQUENCY (Hz)
20 100 1k 10k 20k
-160
-150
-140
-130
-120
-110
-100
-90
-80
-70
-60
PSRR (dB)
FREQUENCY (Hz)
0.00002
0.00005
0.0002
0.0005
0.002
0.005
0.00001
0.0001
0.001
0.01
VRMS
IMD (%)
10m 100m 110 20
0.00002
0.00005
0.0002
0.0005
0.002
0.005
0.00001
0.0001
0.001
0.01
VRMS
IMD (%)
10m 100m 1 10 20
LME49740
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SNAS377B FEBRUARY 2007REVISED APRIL 2013
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
IMD vs Output Voltage IMD vs Output Voltage
VCC = 15V, VEE = –15V, RL= 2kVCC = 17V, VEE = –17V, RL= 2k
Figure 9. Figure 10.
PSRR+ vs Frequency PSRR- vs Frequency
VCC = 15V, VEE = –15V, VCC = 15V, VEE = –15V, RL= 2k
RL= 2k, VRIPPLE = 200mVpp RL= 2k, VRIPPLE = 200mVpp
Figure 11. Figure 12.
CMRR vs Frequency Crosstalk vs Frequency
VCC = 15V, VEE = –15V, RL= 2kVCC = 15V, VEE = –15V, RL= 2k
Figure 13. Figure 14.
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10
1
100
FREQUENCY (Hz)
VOLTAGE NOISE (nV/ Hz)
1 10 100 100k1k 10k
VS = 30V
VCM = 15V
FREQUENCY (Hz)
GAIN (dB), PHASE LAG (q
10k
1k
100 100k 1M 10M
10
0
180
20
40
60
80
100
120
140
160
LME49740
SNAS377B FEBRUARY 2007REVISED APRIL 2013
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Output Voltage vs Supply Voltage Output Voltage vs Load Resistance
RL= 2k, THD+N = 1% THD+N = 1%
Figure 15. Figure 16.
Supply Current vs Supply Voltage
RL= 2k, THD+N = 1% Full Power Bandwidth vs Frequency
Figure 17. Figure 18.
Gain Phase vs Frequency Voltage Noise Density vs Frequency
Figure 19. Figure 20.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Small-Signal Transient Response Large-Signal Transient Response
AV= 1, CL= 100pF AV= 1, CL= 100pF
Figure 21. Figure 22.
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Distortion Signal Gain = 1+(R2/R1)
+
-
LME49740
1000:
R1
10:
R2
Analyzer Input
Audio Precision
System Two
Cascade
Generator Output
Actual Distortion = AP Value/100
LME49740
SNAS377B FEBRUARY 2007REVISED APRIL 2013
www.ti.com
APPLICATION INFORMATION
DISTORTION MEASUREMENTS
The vanishingly low residual distortion produced by LME49740 is below the capabilities of all commercially
available equipment. This makes distortion measurements just slightly more difficult than simply connecting a
distortion meter to the amplifier’s inputs and outputs. The solution, however, is quite simple: an additional
resistor. Adding this resistor extends the resolution of the distortion measurement equipment.
The LME49740’s low residual distortion is an input referred internal error. As shown in Figure 23, adding the 10
resistor connected between the amplifier’s inverting and non-inverting inputs changes the amplifier’s noise gain.
The result is that the error signal (distortion) is amplified by a factor of 101. Although the amplifier’s closed-loop
gain is unaltered, the feedback available to correct distortion errors is reduced by 101, which means that
measurement resolution increases by 101. To ensure minimum effects on distortion measurements, keep the
value of R1 low as shown in Figure 23.
This technique is verified by duplicating the measurements with high closed loop gain and/or making the
measurements at high frequencies. Doing so produces distortion components that are within the measurement
equipment’s capabilities. This datasheet’s THD+N and IMD values were generated using the above described
circuit connected to an Audio Precision System Two Cascade.
Figure 23. THD+N and IMD Distortion Test Circuit
APPLICATION HINTS
The LME49740 is a high-speed op amp with excellent phase margin and stability. Capacitive loads up to 100pF
will cause little change in the phase characteristics of the amplifiers and are therefore allowable.
Capacitive loads greater than 100pF must be isolated from the output. The most straightforward way to do this is
to put a resistor in series with the output. This resistor will also prevent excess power dissipation if the output is
accidentally shorted.
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10 100 1k 10k 100k
FREQUENCY (Hz)
20
30
40
50
60
70
80
90
VOLTAGE GAIN (dB)
-1
0
+1
0
10
20
30
40
50
20 100 1k 10k 20k
FREQUENCY (Hz)
VOLTAGE GAIN (dB)
DEVIATION (dB)
RIAA
-VEE
+VCC
0.47 PF
LME49740
V1
99k
0.47 PF
27 pF
16k200k
15 nF 4.7 nF
+
+
V2 +
-+
-
+
-4.7 PF
+VO
99k
27 pF
FLAT AMP. 40 dB + 40 dBRIAA PREAMP
35 dB, f = 1 kHz
47 PF 47 PF
390
390
1k
39k
39k
1k
AVERAGE RESPONDING
AC VOLT METER
LME49740
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SNAS377B FEBRUARY 2007REVISED APRIL 2013
NOISE MEASUREMENT CIRCUIT
A. Complete shielding is required to prevent induced pick up from external sources. Always check with oscilloscope for
power line noise.
Figure 24. Total Gain: 115 dB at f = 1 kHz
Input Referred Noise Voltage: en= VO/560,000 (V)
RIAA Preamp Voltage Gain,
RIAA Deviation vs Frequency Flat Amp Voltage Gain vs Frequency
VIN = 10mV, AV= 35.0dB, f = 1kHz VO= 0dB, AV= 80.0dB, f = 1kHz
Figure 25. Figure 26.
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-
+
LME49740 VO
R
R
R
V2
V1
R
1
4
20 100 1k 20k
FREQUENCY (Hz)
0
10
20
30
40
50
60
70
VOLTAGE GAIN (dB)
10k
+
-
LME49740 VO
3.6k
15 nF
200k
200
+47 PF
VI
TAPE
HEAD
1
4
LME49740
SNAS377B FEBRUARY 2007REVISED APRIL 2013
www.ti.com
TYPICAL APPLICATIONS
AV= 34.5
F = 1 kHz
En= 0.38 μV
A Weighted
Figure 27. NAB Preamp
Figure 28. NAB Preamp Voltage Gain vs Frequency
VIN = 10mV, AV= 34.5dB, f = 1kHz
VO= V1–V2
Figure 29. Balanced to Single-Ended Converter
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+
-
LME49740
VI
VO
R1
11k
C1
0.01 PFC2
0.01 PF
R2
22k
1
4
+
-
LME49740 VO
R
C
14 mA @ 10V 750
CR
1
4
+
-
VO
R
R
R
V1 R
V2
R
V3 R
V4
1
4LME49740
LME49740
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SNAS377B FEBRUARY 2007REVISED APRIL 2013
VO= V1 + V2 V3 V4
Figure 30. Adder/Subtracter
Figure 31. Sine Wave Oscillator
Illustration is f0= 1 kHz
Figure 32. Second-Order High-Pass Filter
(Butterworth)
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-
+
LME49740 VHP
R2
RG
R0
R2 R1
R2
-
+
LME49740 VBP
0.01 PF
C1 R1
-
+
LME49740 VLP
0.01 PF
C1
VIN
1
4
1
4
1
4
+
-
LME49740
VI
VO
R2
10k
C1
0.022 PF
C2
0.011 PF
R1
10k
1
4
LME49740
SNAS377B FEBRUARY 2007REVISED APRIL 2013
www.ti.com
Illustration is f0= 1 kHz
Figure 33. Second-Order Low-Pass Filter
(Butterworth)
Figure 34. State Variable Filter
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-
+
LME49740 VO1
3.41R1
51k
R1
15k
R1
15k
0.707R1
10k
-
+
LME49740 VO2
3.41R1
51k
R1
15k
R1
15k
VI
1
4
1
4
-
+
LME49740
R2
20k
R1
20k
R6
15k
D1
1S1588
R5
20k
D2
1S1588
R3
10k
VIN -
+
LME49740
R4
20k
R7
6.2k
C1
10 PF
1
4
1
4VO = |VIN|
LME49740
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Figure 35. AC/DC Converter
Figure 36. 2-Channel Panning Circuit (Pan Pot)
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R4
R2R1
0.05 PF
C1
R1
-
+
LME49740 VO
VI
R5
0.05 PF
C1
R5
0.005 PF
C2
R3
BOOST TREBLE CUT
BOOST BASS CUT
1
4
-
+
LME49740
R2
R1
VI
R3
10k
R9
10k
R5
10k
BIAS
R6
10k
VCC
R7
33
R8
33
-VEE
Q1
Q2
VO
1
4
LME49740
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Figure 37. Line Driver
Figure 38. Tone Control
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-
+
LME49740
R5
10k
R
10k 10k
-
+
LME49740 VO
R4
10k
R6 R7
10k
R3
R2
10k
+
-
LME49740
R
R1
200
VI
V2
1
4
1
4
1
4
470 10 PF
4.7 nF 15 nF
16k 200k
33 PF
400 pF 47k
390
100 PF
100k
+
-
LME49740
Phono
Cartridge
1
4
LME49740
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SNAS377B FEBRUARY 2007REVISED APRIL 2013
Av= 35 dB
En= 0.33 μV
S/N = 90 dB
f = 1 kHz
A Weighted
A Weighted, VIN = 10 mV
@f = 1 kHz
Figure 39. RIAA Preamp
Illustration is:
V0 = 101(V2 V1)
Figure 40. Balanced Input Mic Amp
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+
-
LME49740 VO
+
-
LME49740
C2
C1
20k
R2
3k
3k
VI
CUT BOOST
R1
1
4
f01
f02
f03
f04
f05
f06
f07
f08
f09
f010
1
4
LME49740
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www.ti.com
A. See Table 1.
Figure 41. 10-Band Graphic Equalizer
Table 1. C1, C2, R1, and R2Values for Figure 41(1)
fo (Hz) C1C2R1R2
32 0.12μF 4.7μF 75kΩ500Ω
64 0.056μF 3.3μF 68kΩ510Ω
125 0.033μF 1.5μF 62kΩ510Ω
250 0.015μF 0.82μF 68kΩ470Ω
500 8200pF 0.39μF 62kΩ470Ω
1k 3900pF 0.22μF 68kΩ470Ω
2k 2000pF 0.1μF 68kΩ470Ω
4k 1100pF 0.056μF 62kΩ470Ω
8k 510pF 0.022μF 68kΩ510Ω
16k 330pF 0.012μF 51kΩ510Ω
(1) At volume of change = ±12 dB Q = 1.7
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REVISION HISTORY
Rev Date Description
1.0 02/28/07 Initial WEB release.
Fixed the captions on the LME4970MA package (from Dual-In-Line
1.01 02/08/08 to Molded Package (SO).
B 04/04/13 Changed layout of National Data Sheet to TI format.
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PACKAGE OPTION ADDENDUM
www.ti.com 16-Oct-2015
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
LME49740MA/NOPB LIFEBUY SOIC D 14 55 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LME49740
MA
LME49740MAX/NOPB LIFEBUY SOIC D 14 2500 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LME49740
MA
LME49740NA/NOPB LIFEBUY PDIP NFF 14 25 Green (RoHS
& no Sb/Br) CU SN Level-1-NA-UNLIM -40 to 85 LME49740NA
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
PACKAGE OPTION ADDENDUM
www.ti.com 16-Oct-2015
Addendum-Page 2
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
LME49740MAX/NOPB SOIC D 14 2500 330.0 16.4 6.5 9.35 2.3 8.0 16.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 17-Sep-2013
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LME49740MAX/NOPB SOIC D 14 2500 367.0 367.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 17-Sep-2013
Pack Materials-Page 2
MECHANICAL DATA
N0014A
www.ti.com
N14A (Rev G)
NFF0014A
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