HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6334-B
Issued Date : 1992.11.18
Revised Date : 2000. 10.01
Page No. : 1/3
HSMC Product Specifi cation
HMPSA43
NPN SILICON TRANSISTOR
Description
The HMPSA43 is high voltage transistor.
Features
• High Collecto r-Emitter Breakdown Voltage
• Low Collector-Emitter Saturation Voltage
• For Complementary Use with PNP Type HMPSA93
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temp er ature................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltag e ...................................................................................... 200 V
VCEO Collector to Emitter Voltage................................................................................... 200 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ...................................................................................................... 500 mA
Characteristics (Ta=2 5°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 200 - - V IC=100uA, IE=0
BVCEO 200 - - V IC=1mA, IB= 0
BVEBO 6 - - V IE=10uA, IC=0
ICBO - - 100 nA VCB=200V, IE=0
IEBO - - 100 nA VEB=6V, IC=0
*VCE(sat) - - 350 mV IC=20mA, IB=2mA
*VBE(sat) - - 900 mV IC=20mA, IB=2mA
*hFE1 25 - - IC=1mA, VCE= 10V
*hFE2 40 - - IC=10mA, VCE=10V
*hFE3 40 - - IC=30mA, VCE=10V
fT 50 - - MHz IC=10mA, VCE=20V, f=100MHZ
Cob - - 4 pF VCB=20V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE2 & VCE(sat)
Rank hFE1 hFE2 hFE3 VCE(sat)
NS >80 >120 >120 <200mV
N>25 >40 >40 <350mV