/TechnicalInformation IGBT- IGBT-modules FF900R12IE4 PrimePACKTM2/IGBT4and4diodeand NTC PrimePACKTM2modulewithTrench/FieldstopIGBT4andEmitterControlled4diodeandNTC /PreliminaryData VCES = 1200V IC nom = 900A / ICRM = 1800A * * * * UPS * TypicalApplications * MotorDrives * ResonantInverterAppliccations * TractionDrives * UPSSystems * WindTurbines * Tvjop * DC * ElectricalFeatures * ExtendedOperationTemperatureTvjop * HighDCStability * High Short Circuit Capability, Self Limiting Short CircuitCurrent * LowSwitchingLosses * UnbeatableRobustness * VCEsatwithpositiveTemperatureCoefficient * * * VCEsat MechanicalFeatures * 4kVAC1 * 4kVAC1minInsulation * CTI(>400* PackagewithCTI>400 * / * HighCreepageandClearanceDistances * / * HighPowerandThermalCyclingCapability * * HighPowerDensity * DCB * SubstrateforLowThermalResistance ModuleLabelCode BarcodeCode128 DMX-Code preparedby:AC dateofpublication:2013-11-05 approvedby:MS revision:2.4 1 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 /TechnicalInformation IGBT- IGBT-modules IGBT- FF900R12IE4 PreliminaryData /IGBT,Inverter /MaximumRatedValues Collector-emittervoltage Tvj = 25C VCES 1200 V DC ContinuousDCcollectorcurrent TC = 100C, Tvj max = 175C IC nom 900 A Repetitivepeakcollectorcurrent tP = 1 ms ICRM 1800 A Totalpowerdissipation TC = 25C, Tvj max = 175C Ptot 5,10 kW Gate-emitterpeakvoltage VGES +/-20 V /CharacteristicValues Collector-emittersaturationvoltage min. IC = 900 A, VGE = 15 V IC = 900 A, VGE = 15 V IC = 900 A, VGE = 15 V Tvj = 25C Tvj = 125C Tvj = 150C Gatethresholdvoltage IC = 33,0 mA, VCE = VGE, Tvj = 25C Gatecharge VCE sat typ. max. 1,75 2,05 2,10 2,05 V V V VGEth 5,2 5,8 6,4 V VGE = -15 V ... +15 V QG 6,40 C Internalgateresistor Tvj = 25C RGint 1,2 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 54,0 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 3,00 nF Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA td on 0,20 0,22 0,22 s s s tr 0,11 0,12 0,13 s s s td off 0,66 0,75 0,79 s s s tf 0,09 0,14 0,15 s s s Turn-ondelaytime,inductiveload IC = 900 A, VCE = 600 V VGE = 15 V RGon = 1,5 Tvj = 25C Tvj = 125C Tvj = 150C Risetime,inductiveload IC = 900 A, VCE = 600 V VGE = 15 V RGon = 1,5 Tvj = 25C Tvj = 125C Tvj = 150C Turn-offdelaytime,inductiveload IC = 900 A, VCE = 600 V VGE = 15 V RGoff = 1,5 Tvj = 25C Tvj = 125C Tvj = 150C Falltime,inductiveload IC = 900 A, VCE = 600 V VGE = 15 V RGoff = 1,5 Tvj = 25C Tvj = 125C Tvj = 150C Turn-onenergylossperpulse IC = 900 A, VCE = 600 V, LS = 45 nH Tvj = 25C VGE = 15 V, di/dt = 5700 A/s (Tvj = 150C) Tvj = 125C RGon = 1,3 Tvj = 150C Eon 55,0 70,0 80,0 mJ mJ mJ Turn-offenergylossperpulse IC = 900 A, VCE = 600 V, LS = 45 nH Tvj = 25C VGE = 15 V, du/dt = 3200 V/s (Tvj = 150C) Tvj = 125C RGoff = 1,5 Tvj = 150C Eoff 85,0 120 130 mJ mJ mJ SCdata VGE 15 V, VCC = 900 V VCEmax = VCES -LsCE *di/dt ISC Thermalresistance,junctiontocase IGBT/perIGBT RthJC Thermalresistance,casetoheatsink IGBT/perIGBT Paste=1W/(m*K)/grease=1W/(m*K) RthCH 14,0 Temperatureunderswitchingconditions Tvj op -40 preparedby:AC dateofpublication:2013-11-05 approvedby:MS revision:2.4 2 tP 10 s, Tvj = 150C 3600 A 29,5 K/kW K/kW 150 C /TechnicalInformation IGBT- IGBT-modules FF900R12IE4 PreliminaryData Diode/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C DC ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms It-value VR = 0 V, tP = 10 ms, Tvj = 125C VR = 0 V, tP = 10 ms, Tvj = 150C VRRM 1200 V IF 900 A IFRM 1800 A It 91,0 88,0 /CharacteristicValues min. typ. max. 1,90 1,85 1,80 2,30 kAs kAs Forwardvoltage IF = 900 A, VGE = 0 V IF = 900 A, VGE = 0 V IF = 900 A, VGE = 0 V Tvj = 25C Tvj = 125C Tvj = 150C VF Peakreverserecoverycurrent IF = 900 A, - diF/dt = 5700 A/s (Tvj=150C) Tvj = 25C VR = 600 V Tvj = 125C VGE = -15 V Tvj = 150C IRM 500 660 710 A A A Recoveredcharge IF = 900 A, - diF/dt = 5700 A/s (Tvj=150C) Tvj = 25C VR = 600 V Tvj = 125C VGE = -15 V Tvj = 150C Qr 90,0 150 195 C C C Reverserecoveryenergy IF = 900 A, - diF/dt = 5700 A/s (Tvj=150C) Tvj = 25C VR = 600 V Tvj = 125C VGE = -15 V Tvj = 150C Erec 40,0 80,0 90,0 mJ mJ mJ Thermalresistance,junctiontocase /Diode/perdiode RthJC Thermalresistance,casetoheatsink /Diode/perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH 25,5 Temperatureunderswitchingconditions Tvj op -40 150 min. typ. max. R25 5,00 k R/R -5 5 % P25 20,0 mW V V V 53,5 K/kW K/kW C NTC-/NTC-Thermistor /CharacteristicValues Ratedresistance TC = 25C R100 DeviationofR100 TC = 100C, R100 = 493 Powerdissipation TC = 25C B- B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B- B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B- B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K Specificationaccordingtothevalidapplicationnote. preparedby:AC dateofpublication:2013-11-05 approvedby:MS revision:2.4 3 /TechnicalInformation IGBT- IGBT-modules FF900R12IE4 PreliminaryData /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. Materialofmodulebaseplate Internalisolation (1,IEC61140) basicinsulation(class1,IEC61140) Creepagedistance VISOL 4,0 kV Cu Al2O3 -/terminaltoheatsink -/terminaltoterminal 33,0 33,0 mm Clearance -/terminaltoheatsink -/terminaltoterminal 19,0 19,0 mm Comperativetrackingindex CTI > 400 Thermalresistance,casetoheatsink //permodule Paste=1W/(m*K)/grease=1W/(m*K) Strayinductancemodule Moduleleadresistance,terminals-chip TC=25C,//perswitch Storagetemperature min. typ. RthCH 4,50 LsCE 18 nH RCC'+EE' 0,30 m Tstg -40 150 C 3,00 - 6,00 Nm 1,8 - 2,1 Nm 8,0 - 10 Nm 825 g Mountingtorqueformodulmounting M5 ScrewM5-Mountingaccordingtovalidapplicationnote M Terminalconnectiontorque M4 ScrewM4-Mountingaccordingtovalidapplicationnote M8 ScrewM8-Mountingaccordingtovalidapplicationnote M Weight G preparedby:AC dateofpublication:2013-11-05 approvedby:MS revision:2.4 4 max. K/kW /TechnicalInformation IGBT- IGBT-modules FF900R12IE4 PreliminaryData IGBT- (Typical) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT- (Typical) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150C 1800 1800 Tvj = 25C Tvj = 125C Tvj = 150C 1600 1200 1200 1000 1000 IC [A] 1400 IC [A] 1400 800 800 600 600 400 400 200 200 0 0,0 0,5 1,0 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 1600 1,5 2,0 VCE [V] 2,5 3,0 0 3,5 IGBT- (Typical) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 IGBT- (Typical) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=1.3,RGoff=1.5,VCE=600V 1800 Tvj = 25C Tvj = 125C Tvj = 150C 1600 Eon, Tvj = 125C Eon, Tvj = 150C Eoff, Tvj = 125C Eoff, Tvj = 150C 250 1400 200 1200 E [mJ] IC [A] 1000 800 150 100 600 400 50 200 0 5 6 7 8 9 VGE [V] 10 11 0 12 preparedby:AC dateofpublication:2013-11-05 approvedby:MS revision:2.4 5 0 200 400 600 800 1000 1200 1400 1600 1800 IC [A] /TechnicalInformation IGBT- IGBT-modules FF900R12IE4 PreliminaryData IGBT- (Typical) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=900A,VCE=600V IGBT- transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 450 100 Eon, Tvj = 125C Eon, Tvj = 150C Eoff, Tvj = 125C Eoff, Tvj = 150C 400 ZthJC : IGBT 350 10 ZthJC [K/kW] E [mJ] 300 250 200 150 1 100 i: 1 2 3 4 ri[K/kW]: 1,2 6 20 2,3 i[s]: 0,0008 0,013 0,05 0,6 50 0 0,0 1,0 2,0 3,0 4,0 RG [] 5,0 6,0 7,0 0,1 0,001 8,0 IGBT- RBSOA) reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=1.5,Tvj=150C 0,01 0,1 t [s] 1 10 Diodetypical) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 2000 1800 IC, Modul IC, Chip 1800 Tvj = 25C Tvj = 125C Tvj = 150C 1600 1600 1400 1400 1200 1200 IF [A] IC [A] 1000 1000 800 800 600 600 400 400 200 200 0 0 200 400 600 800 VCE [V] 1000 1200 0 1400 preparedby:AC dateofpublication:2013-11-05 approvedby:MS revision:2.4 6 0,0 0,5 1,0 1,5 VF [V] 2,0 2,5 3,0 /TechnicalInformation IGBT- IGBT-modules FF900R12IE4 PreliminaryData Diode(Typical) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=1.3,VCE=600V Diode(Typical) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=900A,VCE=600V 120 120 Erec, Tvj = 125C Erec, Tvj = 150C 110 100 100 90 90 80 70 70 E [mJ] E [mJ] 80 60 60 50 50 40 40 30 30 20 20 10 10 0 Erec, Tvj = 125C Erec, Tvj = 150C 110 0 200 400 600 0 800 1000 1200 1400 1600 IF [A] Diode transientthermalimpedanceDiode,Inverter ZthJC=f(t) 0,0 1,0 2,0 3,0 4,0 RG [] 5,0 6,0 7,0 8,0 140 160 NTC- NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 100 100000 ZthJC : Diode Rtyp 10000 R[] ZthJC [K/kW] 10 1 1000 i: 1 2 3 4 ri[K/kW]: 4,5 12,7 35,4 0,9 i[s]: 0,0008 0,013 0,05 0,6 0,1 0,001 0,01 0,1 t [s] 1 100 10 preparedby:AC dateofpublication:2013-11-05 approvedby:MS revision:2.4 7 0 20 40 60 80 100 TC [C] 120 /TechnicalInformation IGBT- IGBT-modules FF900R12IE4 PreliminaryData /circuit_diagram_headline /packageoutlines preparedby:AC dateofpublication:2013-11-05 approvedby:MS revision:2.4 8 /TechnicalInformation IGBT- IGBT-modules FF900R12IE4 PreliminaryData (www.infineon.com) Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. 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