All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 8 Rev. 02, 2014-08-26
PXFC191507FC
Thermally-Enhanced High Power RF LDMOS FET
150 W, 28 V, 1805 – 1990 MHz
Description
The PXFC191507FC is a 150-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 1805
to 1990 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
flanges. Manufactured with Infineon's advanced LDMOS process,
this device provides excellent thermal performance and superior
reliability.
PXFC191507FC
Package H-37248G-4/2
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon production test fixture)
VDD = 28 V, IDQ = 960 mA, POUT = 32 W avg, ƒ1 = 1980 MHz, ƒ2 = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps 19 20.5 — dB
Drain Efficiency hD 29 31 — %
Intermodulation Distortion IMD — –33 –31 dBc
Features
• Broadband internal input and output matching
• Typical Pulsed CW performance, 1990 MHz, 28 V,
10 µs pulse width, 10% duty cycle, class AB test
- Output power at P1dB = 140 W
- Efficiency = 54%
- Gain = 19.5 dB
• Typical single-carrier WCDMA performance,
1990 MHz, 28 V, 10 dB PAR @ 0.01% CCDF, Test
Model 1 with 16DPCH
- Output power = 32 W avg
- Efficiency = 34%
- Gain = 20 dB
- ACPR = –31 dBc@ 5 MHz
• Capable of handling 10:1 VSWR @28 V, 150 W
(CW) output power
• Integrated ESD protection : Human Body Model,
Class 1C (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
0
10
20
30
40
50
60
16
17
18
19
20
21
22
29 33 37 41 45 49 53
Efficiency (%)
Gain (dB)
Output Power (dBm)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 960 mA, VGS = 2.65 V,
ƒ = 1990 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
Gain
Efficiency
c191507fc_g1
Data Sheet 2 of 8 Rev. 02, 2014-08-26
PXFC191507FC
DC Characteristics (each side)
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — 0.05 1 µA
VDS = 63 V, VGS = 0 V IDSS — — 10 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W
Operating Gate Voltage VDS = 26 V, IDQ = 960 mA VGS 2.3 2.6 2.9 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –6 to +10 V
Operating Voltage VDD 0 to +32 V
Junction Temperature TJ 225 °C
Storage Temperature Range TSTG –65 to +150 °C
Thermal Resistance (TCASE = 70°C, 140 W CW) RqJC 0.43 °C/W
Ordering Information
Type and Version Order Code Package Description Shipping
PXFC191507FC V1 PXFC191507FCV1XWSA1 H-37248G-4/2, earless flange Tray
PXFC191507FC V1 R250 PXFC191507FCV1R250XTMA1 H-37248G-4/2, earless flange Tape & Reel, 250 pcs
PXFC191507FC
Data Sheet 3 of 8 Rev. 02, 2014-08-26
Typical Performance (data taken in a production test fixture)
0
10
20
30
40
50
60
-65
-55
-45
-35
-25
-15
-5
29 33 37 41 45 49 53
Efficiency (%)
IMD & ACPR (dBc)
Output Power (dBm)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 960 mA, VGS = 2.65 V,
ƒ = 1990 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
IMD Low
IMD Up
ACPR
Efficiency
c191507fc_g2 -60
-50
-40
-30
-20
-10
29 33 37 41 45 49 53
IMD (dBc)
Output Power (dBm)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 960 mA, VGS = 2.65V,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
1930 IMDL
1930 IMDU
1960 IMDL
1960 IMDU
1990 IMDL
c191507fc_g3
0
10
20
30
40
50
60
16
17
18
19
20
21
22
30 35 40 45 50 55
Efficiency (%)
Gain (dB)
Output Power (dBm)
Pulsed CW Performance
VDD = 28 V, IDQ = 960 mA
1930 Gain
1960 Gain
1990 Gain
1930 Eff
1960 Eff
1990 Eff
Gain
Efficiency
c191507fc_g4
0
10
20
30
40
50
60
16
17
18
19
20
21
22
27 32 37 42 47 52 57
Efficiency (%)
Gain (dB)
Output Power (dBm)
Pulsed CW Performance
at various VDD
IDQ = 960 mA, ƒ = 1990 MHz
Gain
Efficiency
c191507fc_g5
VDD = 24 V Gain
VDD = 28 V Gain
VDD = 32 V Gain
VDD = 24 V Eff
VDD = 28 V Eff
VDD = 32 V Eff
Data Sheet 4 of 8 Rev. 02, 2014-08-26
PXFC191507FC
Typical Performance (cont.)
Broadband Circuit Impedance
Z Source Z Load
G
S
D
Load Pull Performance
Main Side Load Pull Performance – Pulsed CW signal: 100 µs, 10% duty cycle, VDD = 28 V, IDQ = 960 mA
P1dB
Max Output Power Max PAE
Freq
[MHz]
Zs
[W]
Zl
[W]
Gain
[dB]
POUT
[dBm]
POUT
[W]
PAE
[%]
Zl
[W]
Gain
[dB]
POUT
[dBm]
POUT
[W]
PAE
[%]
1805 1.00 – j3.39 1.36 – j2.81 18.2 52.30 170 58.1 2.82 – j2.46 20.4 50.40 110 65.7
1880 1.38 – j3.80 1.26 – j3.35 17.8 52.10 164 54.7 2.48 – j2.33 20.2 50.50 112 64.8
1930 1.88 – j4.65 1.14 – j3.38 17.6 52.10 162 52.1 2.25 – j2.06 20.1 50.20 104 63.7
1990 2.85 – j4.62 1.31 – j3.40 18.4 52.00 157 56.4 1.81 – j2.40 19.9 50.60 116 62.8
Freq
[MHz]
Z Source WZ Load W
R jX R jX
1930 1.34 –4.30 1.55 –3.14
1960 1.28 –4.15 1.54 –2.99
1990 1.25 –4.04 1.52 –2.86
-25
-20
-15
-10
-5
0
17
18
19
20
21
22
1800 1850 1900 1950 2000 2050 2100
Input Return Loss (dB)
Gain (dB)
Frequency (MHz)
Small Signal CW Performance
Gain & Input Return Loss
VDD = 28 V, IDQ = 960 mA
IRL
Gain
c191507fc_g6
PXFC191507FC
Data Sheet 5 of 8 Rev. 02, 2014-08-26
Reference Circuit , 1930 – 1990 MHz
Reference circuit assembly diagram (not to scale)
+
PXFC191507FC_IN_01
C102
RF_IN
RO4350, .020
RF_OUT
S1
S3
S2
VDD
c191507fc_CD_08-26-2014
C101
C103
C105
C104
C106
R102
R101
C205
C204
C206 C208
C207
C209
R802
R801
R803
R805
R804
C202
C201 C203
RO4350, .020 (61)
C210
C211
PXFC191507FC_OUT_01
(61)
C801
C803
C802
C213
C214
C212
VDD
Data Sheet 6 of 8 Rev. 02, 2014-08-26
PXFC191507FC
Reference Circuit (cont.)
Reference Circuit Assembly
DUT PXFC191507FC V1
Test Fixture Part No. LTN/PXFC191507FC V1
PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 1930 – 1990 MHz
Find Gerber files for this test fixture on the Infineon Web site at http://www.inneon.com/rfpower
Components Information
Component Description Suggested Manufacturer P/N
Input
C101, C104, C105, Capacitor, 33 pF ATC ATC800A330JT250
C102, C106 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T
C103 Capacitor, 1.0 pF ATC ATC800A1R0BT250
C801, C802, C803 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K
R101, R102, R805 Capacitor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ100V
R801 Resistor, 1200 Ohm Panasonic Electronic Components ERJ-3GEYJ122V
R802 Resistor, 1300 Ohm Panasonic Electronic Components ERJ-3GEYJ132V
R803, R804 Capacitor, 100 ohms Panasonic Electronic Components ERJ-8GEYJ101V
S1 Transistor Infineon Technologies BCP56
S2 Potentiometer, 2k WBourns Inc. 3224W-1-202E
S3 Voltage Regulator Texas Instruments LM7805
Output
C201, C202, C203,
C204, C205, C206,
C207, C208
Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T
C209, C210 Capacitor, 220 µF Panasonic Electronic Components EEE-FP1V221AP
C211, C212, C213 Capacitor, 0.3 pF ATC ATC800A0R3BT250
C214 Capacitor, 33 pF ATC ATC800A330JT250
PXFC191507FC
Data Sheet 7 of 8 Rev. 02, 2014-08-26
Package Outline Specifications
Package H-37248G-4/2
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
H-37248G-4/2_sl_01_04-17-2013
S
(16.76
[.660])
9.78
[.385]
2X 15.72
[.619]
1.02
[.040]
20.57
[.810]
SPH 1.57
[.062]
3.76±0.25
[.148±.010]
4X R0.51+0.38
-0.13
[R.020+.015
-.005 ]
4X 3.49±0.20
[.138±.008]
19.81±0.20
[.780±.008]
21.72
[.855]
2X
50° 2X 2.29
[.090]
3.00
[.118]
C
L
C
LC
L
C
L
C
L
C
LC
L
G
DVV
C
L
45° x 0.64
[.025]
D
Diagram
Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D – drain; G – gate; S – source; V – VDD.
5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
Data Sheet 8 of 8 Rev. 02, 2014-08-26
Edition 2014-08-26
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
PXFC191507FC V1
Revision History
Revision Date Data Sheet Type Page Subjects (major changes since last revision)
01 2014-04-11 Advance All Data Sheet reflects advance specification for product development
02 2014-08-26 Production All
All
Data Sheet reflects released product specification
Revised all data and includes final specs, typical performance graphs, loadpull, reference circuit
