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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. KST2907A PNP Epitaxial Silicon Transistor Features 3 * General-Purpose Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST2907AMTF 2F SOT-23 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage IC TSTG -5 V Collector Current -600 mA Storage Temperature 150 C Max. Unit 350 mW Derate Above 25C 2.8 mW/C Thermal Resistance, Junction-to-Ambient 357 C/W Thermal Characteristics(1) Values are at TA = 25C unless otherwise noted. Symbol PD RJA Parameter Total Device Dissipation Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. (c) 2002 Fairchild Semiconductor Corporation KST2907A Rev. 1.5 www.fairchildsemi.com KST2907A -- PNP Epitaxial Silicon Transistor February 2015 Values are at TA = 25C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit BVCBO Collector-Base Breakdown Voltage IC = -10 A, IE = 0 -60 V BVCEO Collector-Emitter Breakdown Voltage(2) IC = -10 mA, IB = 0 -60 V BVEBO Emitter-Base Breakdown Voltage IE = -10 A, IC = 0 -5 V Collector Cut-Off Current VCB = -50 V, IE = 0 ICBO hFE DC Current Gain 75 VCE = -10 V, IC = -1.0 mA 100 VCE = -10 V, IC = -10 mA 100 VCE = -10 V, IC = -150 mA(2) 100 VCE = -10 V, IC = -500 mA VCE(sat) Collector-Emitter Saturation Voltage(2) VBE(sat) Base-Emitter Saturation Voltage(2) -0.01 VCE = -10 V, IC = -0.1 mA (2) A 300 50 IC = -150 mA, IB = -15 mA -0.4 IC = -500 mA, IB = -50 mA -1.6 IC = -150 mA, IB = -15 mA -1.3 IC = -500 mA, IB = -50 mA -2.6 V V Current Gain Bandwidth Product IC = -50 mA, VCE = -20 V, f = 100 MHz Cob Output Capacitance VCB = -10 V, IE = 0, f = 1.0 MHz 8 pF tON Turn-On Time VCC = -30 V, IC = -150 mA, IB1 = -15 mA 50 ns tOFF Turn-Off Time VCC = -6 V, IC = -150 mA, IB1 = IB2 = -15mA 110 ns fT 200 MHz Note: 2. Pulse test: pulse width 300 s, duty cycle 2.0%. (c) 2002 Fairchild Semiconductor Corporation KST2907A Rev. 1.5 www.fairchildsemi.com 2 KST2907A -- PNP Epitaxial Silicon Transistor Electrical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN VCE = 10V 100 10 -1 -10 -100 -1000 -10 IC = 10 IB VBE(sat) -1 -0.1 VCE(sat) -0.01 -1 IC[A], COLLECTOR CURRENT Figure 1. DC Current Gain -100 -1000 Figure 2. Collector-Emitter Saturation Voltage and Base-Emitter Saturation Voltage 12 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 IE = 0 f = 1MHz 10 Cob [pF], CAPACITANCE -10 IC[mA], COLLECTOR CURRENT 8 6 4 2 0 -1 -10 -100 100 10 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT VCB [V], COLLECTOR-BASE VOLTAGE Figure 3. Output Capacitance (c) 2002 Fairchild Semiconductor Corporation KST2907A Rev. 1.5 VCE = -20V Figure 4. Current Gain Bandwidth Product www.fairchildsemi.com 3 KST2907A -- PNP Epitaxial Silicon Transistor Typical Performance Characteristics KST2907A -- PNP Epitaxial Silicon Transistor Physical Dimensions 0.95 2.920.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.400.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 5. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (c) 2002 Fairchild Semiconductor Corporation KST2907A Rev. 1.5 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS FRFET(R) SM Global Power Resource GreenBridge Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and BetterTM MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax MotionGrid(R) MTi(R) MTx(R) MVN(R) mWSaver(R) OptoHiT OPTOLOGIC(R) AccuPower AttitudeEngineTM Awinda(R) AX-CAP(R)* BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficientMax ESBC (R) (R) Fairchild Fairchild Semiconductor(R) FACT Quiet Series FACT(R) FAST(R) FastvCore FETBench FPS OPTOPLANAR(R) (R) PowerTrench(R) PowerXSTM Programmable Active Droop QFET(R) QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a timeTM SignalWise SmartMax SMART START Solutions for Your Success SPM(R) STEALTH SuperFET(R) SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOS(R) SyncFET Sync-LockTM (R)* (R) TinyBoost TinyBuck(R) TinyCalc TinyLogic(R) TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT(R)* SerDes UHC(R) Ultra FRFET UniFET VCX VisualMax VoltagePlus XSTM XsensTM TM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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