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KST2907A — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
KST2907A Rev. 1.5
February 2015
KST2907A
PNP Epitaxial Silicon Transistor
Features
• General-Purpose Transistor
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Part Number Marking Package Packing Method
KST2907AMTF 2F SOT-23 3L Tape and Reel
Symbol Parameter Value Unit
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
ICCollector Current -600 mA
TSTG Storage Temperature 150 °C
Symbol Parameter Max. Unit
PD
Total Device Dissipation 350 mW
Derate Above 25°C2.8mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
KST2907A — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
KST2907A Rev. 1.5 2
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
2. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Symbol Parameter Conditions Min. Max. Unit
BVCBO Collector-Base Breakdown Voltage IC = -10 μA, IE = 0 -60 V
BVCEO Collector-Emitter Breakdown Voltage(2) IC = -10 mA, IB = 0 -60 V
BVEBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5 V
ICBO Collector Cut-Off Current VCB = -50 V, IE = 0 -0.01 μA
hFE DC Current Gain
VCE = -10 V, IC = -0.1 mA 75
VCE = -10 V, IC = -1.0 mA 100
VCE = -10 V, IC = -10 mA 100
VCE = -10 V, IC = -150 mA(2) 100 300
VCE = -10 V, IC = -500 mA(2) 50
VCE(sat) Collector-Emitter Saturation Voltage(2) IC = -150 mA, IB = -15 mA -0.4 V
IC = -500 mA, IB = -50 mA -1.6
VBE(sat) Base-Emitter Saturation Voltage(2) IC = -150 mA, IB = -15 mA -1.3 V
IC = -500 mA, IB = -50 mA -2.6
fTCurrent Gain Bandwidth Product IC = -50 mA, VCE = -20 V,
f = 100 MHz 200 MHz
Cob Output Capacitance VCB = -10 V, IE = 0,
f = 1.0 MHz 8pF
tON Turn-On Time VCC = -30 V, IC = -150 mA,
IB1 = -15 mA 50 ns
tOFF Turn-Off Time VCC = -6 V, IC = -150 mA,
IB1 = IB2 = -15mA 110 ns
KST2907A — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
KST2907A Rev. 1.5 3
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage an d
Base-Emitter Saturation Voltage
Figure 3. Output Capacitance Figure 4. Current Gain Bandwidth Product
-1 -10 -100 -1000
10
100
1000
VCE = 10V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-1 -10 -100 -1000
-0.01
-0.1
-1
-10
VCE(sat)
VBE(sat)
IC = 10 IB
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-1 -10 -100
0
2
4
6
8
10
12
IE = 0
f = 1MHz
Cob [pF], CAPACITANCE
VCB [V], COLLECTOR-BASE VOLTAGE
-1 -10 -100 -1000
10
100
1000
VCE = -20V
fT[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
KST2907A — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
KST2907A Rev. 1.5 4
Physical Dimensions
Figure 5. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
LAND PATTERN
RECOMMENDATION
NOTES: UNLESS OTHERWISE SPECIFIED
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
3
12
SEE DETAIL A
SEATING
PLANE
SCALE: 2X
GAGE PLANE
(0.55)
(0.93)
1.20 MAX
C
0.10
0.00
0.10 C
2.40±0.30
2.92±0.20
1.30+0.20
-0.15
0.60
0.37
0.20 A B
1.90
0.95
(0.29)
0.95
1.40
2.20
1.00
1.90
0.25
0.23
0.08
0.20 MIN
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Rev. I73
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