MBR730 thru MBR760
FEATURES
Metal of silicon rectifier,m ajority carrier conducton
Guard ring for transient protection
Low power loss, h igh efficiency
High current capability , low VF
High surge capacity
Plastic package has UL flamm ability classification 94V-0
For use in low voltage,hig h frequency inverters,free
whelling,and polarity protection applications
ME CHANICAL DATA
Case : TO-220AC molded plastic
Polarity : As marked on the body
Weig ht : 0.08 ounces, 2.24 grams
Mounting position : Any
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
MBR730
30
21
30
Maximum Av erage Forward
Rectified Current (See Fig.1)
@T
C
=
125 C
Peak Forward Surge Current
8.3ms s ingle half sine-w ave
superimposed on rated load (JEDEC METHOD )
Maximum R ecurrent Peak Reverse Voltag e
Maximum R MS Volta ge
Maximum DC Blocking Voltage
Maximum Forward
Voltage (Note 1)
7.5
150
-
0.57
0.84
0.72
T
J
Operating Temperature Range
-55 to +150 C
T
STG
Storage Temperature Range
-55 to +175 C
T
J
=25 C
C
J
Typical Jun ction Ca pacitance (Not e 3)
400
pF
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
Voltage Rate of Change (Rated VR )
T
J
=125 C
dv/dt 10000
V/us
I
F
=7.5A @
I
F
=7.5A @
I
F
=15A @
I
F
=15A @
MBR735
35
24.5
35
MBR740
40
28
40
MBR745
45
31.5
45
MBR750
50
35
50
MBR760
60
42
60
V
0.75
0.65
-
-
I
R
@T
J
=125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C 0.1
15
mA
0.5
50
Typical Thermal Resistance (Note 2)
3.5
C/W
R
0JC
T
J
=25 C
TO-220AC
All Dimensions in millim et er
TO-220AC
DIM. MIN. MAX.
A
C
D
E
F
G
H
B14.22 15.88
10.67
9.65
2.54 3.4 3
6.8 6
5.84
8.26 9.28
- 6.3 5
12.70 14.73
0.51 5.33
N
M
L
K
J
I 1.1 4
4.83
0.6 4 0.30
3.53 4.09
3.56 4.83
1.14 1.4 0
2.9 2
2.03
A
B
C
K
J
I
G
F
E
D
N
M
L
H
PIN 1
PIN 2 CASE
PIN
12
SCHOTTKY BAR RIER RECTIFIERS
REVE RSE VOLTAGE
- 30
to
60
Volts
FOR WAR D CURRENT
- 7.5
Amperes
NOTES : 1. 300us Pulse Width, Duty Cycle 2%
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and Appli ed Reverse Voltage of 4.0V DC.
T
J
=125 C
SEMICONDUCTOR
LITE-ON
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
am bient temperature unless otherw ise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
F o r capacitive lo ad, derate c u rr e n t b y 20%
REV. 3, 13-Sep-2001, KTHA02
RATING AND CHARACTERISTIC CURVES
MBR 730 thru MB R760
IN STANTANEOUS F O RWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.2 0.3 0.7 0.8
1.0
10
100
0.4 0.5 0.6
0.1 1.0
0.9
IN STANTANEOUS F O RWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.1
1.0
10
100
0.1 PULSE WIDTH 300us
2% Duty cycle
TJ= 25 C
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
FIG.3 - TYPICAL REVERSE CHARACTERISTI CS
INSTANTANEOUS
REVERSE CURRENT ,(mA)
20 40 120 140
0
0.001
0.1
1.0
100
10
60 80 100
TJ= 125 C
0.01
TJ= 25 C
TJ= 75 C
MBR730 ~ MBR745
MBR750 ~ MBR760
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
REVERSE VOLTAGE , VO LTS
10
1100
10000
1000
100 0.1 4
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD C URRE NT
AMPERES
25
75 100 125 150
2
050
8
175
6
0
4
RESISTIVE OR
INDUC TIVE LOAD
10
CASE TEM PERATURE , C
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CY CLES AT 60Hz
PEAK FORWARD SURGE CU RR ENT,
AMPERES
1 5 10 50 100220
0
50
100
150
8.3ms Single Half - Sin e-Wave
(JEDEC METHOD)
TJ= 25 C, f= 1MHz
REV. 3, 13-Sep-2001, KTHA02