DATA SH EET
Product specification
Supersedes data of 1999 Aug 05 2003 Mar 25
DISCRETE SEMICONDUCTORS
BAT754 series
Schottky barrier (double) diodes
a
ge
M3D088
2003 Mar 25 2
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT754 series
FEATURES
•Very low forward voltage
•Guard ring protected
•Small plastic SMD package
•Low diode capacitance.
APPLICATIONS
•Ultra high-speed switching
•Voltage clamping
•Protection circuits
•Blocking diodes
•Low power consumption
applications, e.g. hand-held
applications.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT23 small
plastic SMD package. Low forward
voltageselectionoftheBAT54series.
Single diodes and double diodes with
different pinning are available.
PINNING
PIN BAT754
ACS
1ak
1a
1a
1
2 n.c. k2a2k2
3ka
1
,a
2k
1
,k
2k
1
,a
2
Fig.1 Simplified outline
(SOT23) and pin
configuration.
handbook, 2 columns
21
3
MGC421
Top view
Fig.2 BAT754 single diode
configuration (symbol).
3
12
n.c.
MLC357
Fig.3 BAT754A diode
configuration (symbol).
3
12
MLC360
Fig.4 BAT754C diode
configuration (symbol).
3
12
MLC359
Fig.5 BAT754S diode
configuration (symbol).
3
12
MLC358
MARKING
Note
1. ∗= p : Made in Hong Kong.
∗= t : Made in Malaysia.
∗= W : Made in China.
TYPE NUMBER MARKING
CODE(1)
BAT754 2K*
BAT754A 2L*
BAT754C 2M*
BAT754S 2N*
2003 Mar 25 3
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT754 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp= 300 µs; δ≤0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRcontinuous reverse voltage −30 V
IFcontinuous forward current −200 mA
IFRM repetitive peak forward current tp≤1s;δ≤0.5 −300 mA
IFSM non-repetitive peak forward current t = 8.3 ms half sinewave;
JEDEC method −600 mA
Tstg storage temperature −65 +150 °C
Tjjunction temperature −125 °C
Tamb operating ambient temperature −65 +125 °C
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
VFforward voltage see Fig.6
IF= 0.1 mA −200 mV
IF=1mA −260 mV
IF=10mA −340 mV
IF=30mA −420 mV
IF= 100 mA 600 −mV
IRreverse current VR= 25 V; note 1; see Fig.7 −2µA
Cddiode capacitance f = 1 MHz; VR= 1 V; see Fig.8 −10 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to
ambient note 1 500 K/W
2003 Mar 25 4
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT754 series
GRAPHICAL DATA
Fig.6 Forward current as a function of forward
voltage; typical values.
(1) Tamb = 125 °C.
(2) Tamb =85°C.
(3) Tamb =25°C.
handbook, halfpage
10
IF
VF (V)
3
10
(mA)
2
10
1
10 11.20.80.40
MSA892
(3)(2)(1)
(3)(2)(1)
Fig.7 Reverse current as a function of reverse
voltage; typical values.
(1) Tamb = 125 °C.
(2) Tamb =85°C.
(3) Tamb =25°C.
0102030
V (V)
R
10 3
IR
(µA)
10 2
10
1
10 1
(1)
(2)
(3)
MSA893
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb =25°C.
handbook, halfpage
0102030
0
5
10
15
VR (V)
Cd
(pF)
MSA891
2003 Mar 25 5
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT754 series
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
2003 Mar 25 6
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT754 series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyother conditionsabovethose giveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythat suchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2003 Mar 25 7
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT754 series
NOTES
© Koninklijke Philips Electronics N.V. 2003 SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
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Contact information
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Printed in The Netherlands 613514/02/pp8 Date of release: 2003 Mar 25 Document order number: 9397 750 10968
