PMV160UP,215 - NXP Semiconductors

1. Product profile

1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB)

small Surface-Moun ted De vice (SMD) pl astic p ackag e using Tr ench MOSFET techn ology.

1.2 Features and benefits

1.8 V RDSon rated

Very fast switching

Trench MOSFET technology

1.3 Applications

Relay driver

High-speed line driver

High-side loadswitch

Switching circuits

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.

2. Pinning information

PMV160UP

20 V, 1.2 A P-channel Trench MOSFET

Rev. 2 — 6 December 2011 Product data sheet

SOT23

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj=25°C ---20V

VGS gate-source voltage -8 - 8 V

IDdrain current VGS =-4.5V; T

amb 25 °C [1] ---1.2A

Static characteristics

RDSon drain-source on-state

resistance VGS =-4.5V; I

D=-1.2A; T

j= 25 °C - 170 210 mΩ

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic sym bol

1 G gate

SOT23 (TO-236AB)

2Ssource

3 D drain

017aaa257

Product data sheet Rev. 2 — 6 December 2011 2 of 16

NXP Semiconductors PMV160UP

20 V, 1.2 A P-channel Trench MOSFET

3. Ordering information

4. Marking

[1] % = placeholder for manufacturing site code

Table 3. Ordering informatio n

Type number Package

Name Description Version

PMV160UP TO-236AB plastic surface-mounted package; 3 leads SOT23

Table 4. Marking codes

Type number Marking code[1]

PMV160UP NH%

Product data sheet Rev. 2 — 6 December 2011 3 of 16

NXP Semiconductors PMV160UP

20 V, 1.2 A P-channel Trench MOSFET

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj=25°C - -20 V

VGS gate-source voltage -8 8 V

IDdrain current VGS =-4.5V; T

amb 25 °C [1] --1.2A

VGS =-4.5V; T

amb =100°C [1] --0.8A

IDM peak drain current Tamb = 25 °C; single pulse; tp≤10 µs - -4 A

Ptot total power dissipation Tamb =25°C [2] - 335 mW

[1] - 480 mW

Tsp = 25 °C - 2170 mW

Tjjunction temperature -55 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

Source-drain diode

ISsource current Tamb =25°C [1] --0.5A

Fig 1. Normalized total power dissipation as a

function of junction temp era tu re Fig 2. Normalized continuous drain current as a

function of junction temp erat ure

Tj (°C)

−75 17512525 75−25

017aaa123

120

Pder

(%)

Tj (°C)

−75 17512525 75−25

017aaa124

120

Ider

(%)

Product data sheet Rev. 2 — 6 December 2011 4 of 16

NXP Semiconductors PMV160UP

20 V, 1.2 A P-channel Trench MOSFET

IDM = single pul s e

(1) tp = 1 ms

(2) tp = 10 ms

(3) DC; Tsp = 25 °C

(4) tp = 100 ms

(5) DC; Tamb = 25 °C; drain mounting pad 6 cm2

Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source

voltage

017aaa339

VDS (V)

–10–1 –102

–10–1

–1

–10–1

–10

(A)

–10–2

(1)

(2)

(3)

(4)

(5)

Limit RDSon = VDS/ID

Product data sheet Rev. 2 — 6 December 2011 5 of 16

NXP Semiconductors PMV160UP

20 V, 1.2 A P-channel Trench MOSFET

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance

from junction to

ambient

in free air [1] - 325 374 K/W

[2] - 227 260 K/W

Rth(j-sp) thermal resistance

from junction to solder

point

- 5060K/W

FR4 PCB, standard footprint

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

FR4 PCB, mounting pad for drain 6 cm2

Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

017aaa340

tp (s)

10–3 102103

10110–2 10–1

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33 0.25

0.2

0.1

0.05 0.02

0.01 0

017aaa341

tp (s)

10–3 102103

10110–2 10–1

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75 0.5

0.33 0.25

0.2

0.1

0.05

0.02

0.01

Product data sheet Rev. 2 — 6 December 2011 6 of 16

NXP Semiconductors PMV160UP

20 V, 1.2 A P-channel Trench MOSFET

7. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source

breakdown voltage ID=-250µA; V

GS =0V; T

j=25°C -20--V

VGSth gate-source threshold

voltage ID=-250µA; V

DS =V

GS; Tj= 25 °C -0.45 -0.7 -0.95 V

IDSS drain leakage current VDS =-20V; V

GS =0V; T

j=25°C ---1µA

VDS =-20V; V

GS =0V; T

j= 150 °C - - -10 µA

IGSS gate leakage current VGS =-8V; V

DS =0V; T

j= 25 °C - - -100 nA

VGS =8V; V

DS =0V; T

j= 25 °C - - -100 nA

RDSon drain-source on-state

resistance VGS =-4.5V; I

D=-1.2A; T

j= 25 °C - 170 210 mΩ

VGS =-4.5V; I

D=-1.2A; T

j= 150 °C - 265 328 mΩ

VGS =-2.5V; I

D=-1.1A; T

j= 25 °C - 210 270 mΩ

VGS =-1.8V; I

D=-0.5A; T

j= 25 °C - 280 380 mΩ

gfs forward

transconductance VDS =-5V; I

D=-1.2A; T

j=25°C - 3.7 - S

Dynamic character istics

QG(tot) total gate charge VDS =-10V; I

D=-1A; V

GS =-4.5V;

Tj=25°C -3.34nC

QGS gate-source charge - 1 - nC

QGD gate-drain charge - 0.5 - nC

Ciss input capacitance VDS = -10 V; f = 1 MHz; VGS =0V;

Tj=25°C - 365 - pF

Coss output capacitance - 42 - pF

Crss reverse transfer

capacitance -30-pF

td(on) turn-on delay time VDS =-10V; V

GS =-4.5V; R

G(ext) =6Ω;

Tj=25°C; I

D=-1A -7-ns

trrise time - 26 - ns

td(off) turn-o ff delay time - 35 - ns

tffall time - 17 - ns

Source-drain diode

VSD source-drain voltage IS=-0.5A; V

GS =0V; T

j= 25 °C - -0.7 -1.2 V

Product data sheet Rev. 2 — 6 December 2011 7 of 16

NXP Semiconductors PMV160UP

20 V, 1.2 A P-channel Trench MOSFET

Tj = 25 °C Tj = 25 °C; VDS = -5 V

(1) minimum values

(2) typical values

(3) maximum values

Fig 6. Outp ut characteristics: drain current as a

function of drain-source voltage; typical values Fig 7. Su b-threshold drain current as a function of

gate-source voltage

Tj = 25 °C

(1) VGS = -1.4 V

(2) VGS = -1.5 V

(3) VGS = -1.6 V

(4) VGS = -1.8 V

(5) VGS = -2.0 V

(6) VGS = -2.5 V

(7) VGS = -4.5 V

ID = -2.5 A

(1) Tj = 150 °C

(2) Tj = 25 °C

Fig 8. Drain-source on-state resistance as a function

of drain current; typical values Fig 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

VDS (V)

0–4–3–1 –2

017aaa342

–2

–1

–3

–4

(A)

–4.5 V

VGS = –2.0 V

–2.5 V

–2.3 V

–1.8 V

–1.5 V

–1.4 V

–1.7 V

017aaa343

–10–4

–10–5

–10–3

(A)

–10–6

VGS (V)

–0.1 –1.1–0.9–0.5 –0.7–0.3

(1) (2) (3)

ID (A)

–0.5 –4.5–3.5–1.5 –2.5

017aaa344

400

600

200

800

1000

RDSon

(mΩ)

(1) (2) (3) (4) (5)

(6)

(7)

VGS (V)

0–6–5–2 –4

017aaa345

400

600

200

800

1000

RDSon

(mΩ)

(1)

(2)

Product data sheet Rev. 2 — 6 December 2011 8 of 16

NXP Semiconductors PMV160UP

20 V, 1.2 A P-channel Trench MOSFET

VDS > ID × RDSon

(1) Tj = 25 °C

(2) Tj = 150 °C

Fig 10. Transfer characteristics: drain curre nt as a

function of gate-source voltage; typical values Fig 11. Normalized drain-source on-state resistance as

a function of junctio n temperature; typical

values

ID = -0.25 mA; VDS = VGS

(1) maximum values

(2) typical values

(3) minimum values

f = 1 MHz; VGS = 0 V

(1) Ciss

(2) Coss

(3) Crss

Fig 12. Gate-source threshold voltage as a function of

junction temperature Fig 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

017aaa346

VGS (V)

0–3–2–1

–2

–1

–3

–4

(A)

(1)

(2)

Tj (°C)

–60 180120060

017aaa147

1.0

0.5

1.5

2.0

0.0

Tj (°C)

–60 180120060

017aaa148

–0.4

–0.8

–1.2

VGS(th)

(V)

(1)

(3)

(2)

017aaa347

VDS (V)

–10–1 –102

–10–1

102

103

(pF)

(1)

(2)

(3)

Product data sheet Rev. 2 — 6 December 2011 9 of 16

NXP Semiconductors PMV160UP

20 V, 1.2 A P-channel Trench MOSFET

ID = -1.0 A; VDS = -10 V; Tamb = 25 °C

Fig 14. Gate-source voltage as a function of gate

charge; typical values Fig 15. Gate charge waveform definitions

VGS = 0 V

(1) Tj = 150 °C

(2) Tj = 25 °C

Fig 16. Source current as a function of source-drain voltage; typica l values

QG (nC)

04312

017aaa348

–2

–3

–1

–4

–5

VGS

(V)

017aaa137

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

QGS

VGS(pl)

017aaa349

VSD (V)

0.0 –1.2–0.8–0.4

–1.0

–0.5

–1.5

–2.0

(A)

0.0

(1) (2)

Product data sheet Rev. 2 — 6 December 2011 10 of 16

NXP Semiconductors PMV160UP

20 V, 1.2 A P-channel Trench MOSFET

8. Test information

Fig 17. Duty cycle definitio n

006aaa812

duty cycle δ =

Product data sheet Rev. 2 — 6 December 2011 11 of 16

NXP Semiconductors PMV160UP

20 V, 1.2 A P-channel Trench MOSFET

9. Package outline

Fig 18. Package outline SOT23 (TO-236AB)

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT23

Product data sheet Rev. 2 — 6 December 2011 12 of 16

NXP Semiconductors PMV160UP

20 V, 1.2 A P-channel Trench MOSFET

10. Soldering

Fig 19. Reflow soldering footprint for SOT23 (TO-236AB)

Fig 20. Wave soldering footprint for SOT23 (TO-236AB)

solder lands

solder resist

occupied area

solder paste

sot023_fr

0.5

(3×)

0.6

(3×)

0.6

(3×)

0.7

(3×)

3.3

2.9

1.7

1.9

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_fw

2.8

4.5

1.4

4.6

1.4

(2×)

1.2

(2×)

2.2

2.6

Dimensions in mm

Product data sheet Rev. 2 — 6 December 2011 13 of 16

NXP Semiconductors PMV160UP

20 V, 1.2 A P-channel Trench MOSFET

11. Revision history

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PMV160UP v.2 20111206 Product data sheet - PMV160UP v.1

Modifications: • 7 “Characteristics”: VGSth condition is corrected

PMV160UP v.1 20110907 Product data sheet - -

Product data sheet Rev. 2 — 6 December 2011 14 of 16

NXP Semiconductors PMV160UP

20 V, 1.2 A P-channel Trench MOSFET

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The p r oduct status of device(s) des cribed in this document may ha ve changed si nce this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

12.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modificati ons or additions.

NXP Semiconductors does not give any representations or warranties as to

the accuracy or completeness of informati on included herein and shall have

no liability for the consequences of use of such info rmation.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

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Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

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Product specifica t io n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

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deemed to off er functions and qualities beyond tho se described in the

Product data sheet.

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Limited warranty and liability — Information in this d ocument is be lieved to

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Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

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products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

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accepts no liability for any assistance with applicati ons or customer product

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the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Document status [1] [2] Product status [3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 2 — 6 December 2011 15 of 16

NXP Semiconductors PMV160UP

20 V, 1.2 A P-channel Trench MOSFET

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in accordance with automotive testing or application requirements. NXP

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In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and st andards, customer

(a) shall use the product without NXP Semicond uctors’ warranty of the

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liability, damages or failed product claims resulting from customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

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12.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIF ARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

13. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PMV160UP

20 V, 1.2 A P-channel Trench MOSFET

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 6 December 2011

Document identifier: PMV160UP

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . .5

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . .10

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .11

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .13

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .14

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15

13 Contact information. . . . . . . . . . . . . . . . . . . . . .15