2N6387G - ON Semiconductor L.L.C.

October, 2011 − Rev. 14

1Publication Order Number:

2N6387/D

2N6387, 2N6388

Plastic Medium-Power

Silicon Transistors

These devices are designed for general−purpose amplifier and

low−speed switching applications.

Features

•High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc

•Collector−Emitter Sustaining Voltage − @ 100 mAdc

VCEO(sus) = 60 Vdc (Min) − 2N6387

= 80 Vdc (Min) − 2N6388

•Low Collector−Emitter Saturation Voltage −

VCE(sat) = 2.0 Vdc (Max) @ IC

= 5.0 Adc − 2N6387, 2N6388

•Monolithic Construction with Built−In Base−Emitter Shunt Resistors

•TO−220AB Compact Package

•Pb−Free Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating Symbol Value Unit

Collector−Emitter Voltage 2N6387

2N6388

VCEO 60

80

Vdc

Collector−Base Voltage 2N6387

2N6388

VCB 60

80

Vdc

Emitter−Base Voltage VEB 5.0 Vdc

Collector Current − Continuous

− Peak

IC10

15

Adc

Base Current IB250 mAdc

Total Power Dissipation @ TC = 25_C

Derate above 25_C

PD65

0.52

W

W/°C

Total Power Dissipation @ TA = 25_C

Derate above 25_C

PD2.0

0.016

W

W/°C

Operating and Storage Junction,

Temperature Range

TJ, Tstg −65 to +150 °C

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 1.92 _C/W

Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

DARLINGTON NPN SILICON

POWER TRANSISTORS

8 AND 10 AMPERES

65 WATTS, 60 − 80 VOLTS

TO−220AB

CASE 221A

STYLE 1

123

4

http://onsemi.com

2N638x = Device Code

x = 7 or 8

G=Pb−Free Package

A = Assembly Location

Y = Year

WW = Work Week

MARKING

DIAGRAM

2N638xG

AYWW

2N6388 TO−220AB 50 Units / Rail

2N6388G TO−220AB

(Pb−Free)

50 Units / Rail

Device Package Shipping

2N6387 TO−220AB 50 Units / Rail

2N6387G TO−220AB

(Pb−Free)

50 Units / Rail

ORDERING INFORMATION

2N6387, 2N6388

http://onsemi.com

2

80

40

20

020 40 80 100 120 160

Figure 1. Power Derating

T, TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

60

TATC

4.0

2.0

1.0

3.0

0 60 140

TA

TC

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 200 mAdc, IB = 0) 2N6387

2N6388

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

60

80

ÎÎÎÎ

−

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0) 2N6387

(VCE = 80 Vdc, IB = 0) 2N6388

ÎÎÎÎÎ

ICEO

ÎÎÎ

−

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N6387

(VCE − 80 Vdc, VEB(off) = 1.5 Vdc) 2N6388

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N6387

(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N6388

ÎÎÎÎÎ

ICEX

ÎÎÎ

−

ÎÎÎÎ

300

3.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎ

−

ÎÎÎÎ

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 5.0 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388

(IC = 1 0 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388

ÎÎÎÎÎ

hFE

ÎÎÎ

1000

100

ÎÎÎÎ

20,000

−

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 5.0 Adc, IB = 0.01 Adc) 2N6387, 2N6388

(IC = 10 Adc, IB = 0.1 Adc) 2N6387, 2N6388

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

−

ÎÎÎÎ

2.0

3.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter On Voltage

(IC = 5.0 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388

(IC = 10 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388

ÎÎÎÎÎ

VBE(on)

ÎÎÎ

−

ÎÎÎÎ

2.8

4.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small−Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)

ÎÎÎÎÎ

|hfe|

ÎÎÎ

20

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

ÎÎÎÎÎ

Cob

ÎÎÎ

−

ÎÎÎÎ

200

ÎÎÎ

pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small−Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)

ÎÎÎÎÎ

hfe

ÎÎÎ

1000

ÎÎÎÎ

−

ÎÎÎ

−

2. Indicates JEDEC Registered Data.

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2N6387, 2N6388

http://onsemi.com

3

Figure 2. Switching Times Test Circuit

7.0

0.1

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMPS)

t, TIME (s)μ

5.0

0.7

0.3

0.2

0.2 10

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

tf

0.07 1.0 5.0

ts

tr

0.1

1.0

3.0

0.5 2.0

0

VCC

+ 30 V

SCOPE

TUT

- 4.0 V

tr, tf v 10 ns

DUTY CYCLE = 1.0%

RC

D1 MUST BE FAST RECOVERY TYPES, e.g.,

1N5825 USED ABOVE IB [ 100 mA

MSD6100 USED BELOW IB [ 100 mA

25 ms

D1

51

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

V1

APPROX

+ 12 V

V2

APPROX

- 8 V

[ 8.0 k [ 120

FOR td AND tr, D1 IS DISCONNECTED

AND V2 = 0

RB

td

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

ZqJC (t) = r(t) RqJC

RqJC = 1.92°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) ZqJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01 SINGLE PULSE

0.1

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

2N6387, 2N6388

http://onsemi.com

4

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 100°C

SECOND BREAKDOWN LIMITED

20

1.0

Figure 5. Active-Region Safe Operating Area

2.0

0.03 10 20 80

TJ = 150°C

0.2

5.0

0.5

IC, COLLECTOR CURRENT (AMPS)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10

40

1.0

0.1

dc

2.0 604.0 6.0

50 ms

10 ms

CURVES APPLY BELOW RATED VCEO

5 ms

1 ms

50 ms

2N6387

2N6388

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

< 150_C. TJ(pk) may be calculated from the data in Figure

4. At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown

10,000

1.0

Figure 6. Small−Signal Current Gain

f, FREQUENCY (kHz)

10 2.0 5.0 10 20 50 100 200 1000

500

300

100

5000

hFE, SMALL-SIGNAL CURRENT GAIN

20

3000

200

500

2000

1000

30

50

TC = 25°C

VCE = 4.0 Vdc

IC = 3.0 Adc

300

0.1

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

30 1.0 2.0 5.0 20 10010

C, CAPACITANCE (pF)

200

100

70

50

Cib

Cob

500.2 0.5

TJ = 25°C

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.1

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5 0.7 1.0 2.0 10

500

300

hFE, DC CURRENT GAIN

TJ = 150°C

25°C

-55°C

VCE = 4.0 V

200 7.0

20,000

5000

10,000

3000

2000

1000

3.0 5.0

Figure 9. Collector Saturation Region

3.0

IB, BASE CURRENT (mA)

0.3 0.5 1.0 2.0 3.0 5.0 7.0 30

2.6

2.2

1.8

1.4

IC = 2.0 A

TJ = 25°C

4.0 A 6.0 A

1.0 0.7 2010

2N6387, 2N6388

http://onsemi.com

5

0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0

0

- 1.0

IC, COLLECTOR CURRENT (AMP)

VBE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

Figure 10. “On” Voltages

VCE(sat) @ IC/IB = 250

TJ = 25°C

VBE @ VCE = 4.0 V

0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0

3.0

2.5

2.0

1.5

1.0

0.5

Figure 11. Temperature Coefficients

IC, COLLECTOR CURRENT (AMP)

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

*qVC for VCE(sat) -55°C to 25°C

25°C to 150°C

*IC/IB ≤

hFE@VCE +4.0V

3

-55°C to 25°C

25°C to 150°C

qVB for VBE

- 2.0

- 3.0

- 4.0

- 5.0

+ 1.0

+ 2.0

+ 3.0

+ 4.0

+ 5.0

105

Figure 12. Collector Cut−Off Region

VBE, BASE-EMITTER VOLTAGE (VOLTS)

102

101

100

, COLLECTOR CURRENT (A)

μ

IC

10-1

VCE = 30 V

TJ = 150°C

100°C

25°C

REVERSE FORWARD

103

104

+0.2 +0.40-0.2-0.4-0.6 +0.6 +0.8 +1.0 +1.2 + 1.4

Figure 13. Darlington Schematic

BASE

COLLECTOR

EMITTER

[ 8.0 k [ 120

2N6387, 2N6388

http://onsemi.com

6

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AG

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.036 0.64 0.91

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.161 2.80 4.10

J0.014 0.025 0.36 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

B

Q

H

Z

L

V

G

N

A

K

F

123

4

D

SEATING

PLANE

−T−

C

S

T

U

R

J

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

2N6387/D

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local

Sales Representative