TIC246 SERIES SILICON TRIACS High Current Triacs TO-220 PACKAGE (TOP VIEW) 16 A RMS Glass Passivated Wafer MT1 1 400 V to 800 V Off-State Voltage MT2 2 G 3 125 A Peak Current Max IGT of 50 mA (Quadrants 1 - 3) Pin 2 is in electrical contact with the mounting base. MDC2ACA This series is currently available, but not recommended for new designs. absolute maximum ratings over operating case temperature (unless otherwise noted) RATING TIC246D TIC246M Repetitive peak off-state voltage (see Note 1) TIC246S Full-cycle RMS on-state current at (or below) 70C case temperature (see Note 2) TIC246N Peak on-state surge current full-sine-wave at (or below) 25C case temperature (see Note 3) Peak gate current Operating case temperature range Storage temperature range SYMBOL 400 600 VDRM UNIT V 700 800 IT(RMS) 16 A ITSM 125 A TC -40 to +110 C TL 230 C IGM Tstg Lead temperature 1.6 mm from case for 10 seconds VALUE 1 -40 to +125 A C NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70C derate linearly to 110C case temperature at the rate of 400 mA/C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. electrical characteristics at 25C case temperature (unless otherwise noted ) PARAMETER IDRM IGT VGT VT Repetitive peak off-state current Gate trigger current Gate trigger voltage On-state voltage TEST CONDITIONS VD = rated VDRM IG = 0 Vsupply = +12 V RL = 10 Vsupply = -12 V RL = 10 Vsupply = +12 V Vsupply = -12 V RL = 10 tp(g) > 20 s Vsupply = -12 V RL = 10 Vsupply = -12 V ITM = 22.5 A tp(g) > 20 s tp(g) > 20 s RL = 10 tp(g) > 20 s tp(g) > 20 s RL = 10 tp(g) > 20 s RL = 10 tp(g) > 20 s IG = 50mA TYP TC = 110C RL = 10 Vsupply = +12 V Vsupply = +12 V MIN tp(g) > 20 s (see Note 4) 12 -19 -16 34 0.8 -0.8 -0.8 0.9 1.4 MAX UNIT 2 mA 50 -50 -50 mA 2 -2 -2 2 1.7 V V All voltages are with respect to Main Terminal 1. NOTE 4: This parameter must be measured using pulse techniques, t p = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIC246 SERIES SILICON TRIACS electrical characteristics at 25C case temperature (unless otherwise noted) (continued) PARAMETER TEST CONDITIONS IH Holding current IL Latching current di/dt Init' ITM = 100 mA 22 40 Vsupply = -12 V IG = 0 Init' ITM = -100 mA -12 -40 Vsupply = +12 V off-state voltage dv/dt(c) MAX IG = 0 MIN VD = Rated VD UNIT mA 80 (see Note 5) Vsupply = -12 V Critical rate of rise of dv/dt TYP Vsupply = +12 V mA -80 IG = 0 TC = 110C Critical rise of VD = Rated VD TC = 80C commutation voltage di/dt = 0.5 IT(RMS)/ms IT = 1.4 IT(RMS) Critical rate of rise of VD = Rated VD on -state current diG/dt = 50 mA/s IGT = 50 mA 1.2 TC = 110C 400 V/s 9 V/s 100 A/s All voltages are with respect to Main Terminal 1. NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: R G = 100 , tp(g) = 20 s, tr = 15 ns, f = 1 kHz. thermal characteristics PARAMETER RJC Junction to case thermal resistance RJA Junction to free air thermal resistance MIN TYP MAX UNIT 1.9 C/W 62.5 C/W TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT vs IGT - Gate Trigger Current - mA 100 10 1 0*1 -60 Vsupply IGTM + + + + -40 -20 CASE TEMPERATURE TC08AA 10 VGT - Gate Trigger Voltage - V CASE TEMPERATURE 1000 GATE TRIGGER VOLTAGE vs VAA = 12 V 1 Vsupply IGTM + + + + tp(g) = 20 s 20 40 60 80 100 VAA = 12 V } RL = 10 0 120 0*1 -60 -40 -20 RL = 10 tp(g) = 20 s 0 20 40 60 80 TC - Case Temperature - C TC - Case Temperature - C Figure 1. Figure 2. 2 TC08AB 100 120 DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIC246 SERIES SILICON TRIACS TYPICAL CHARACTERISTICS HOLDING CURRENT vs LATCHING CURRENT vs CASE TEMPERATURE IL - Latching Current - mA IH - Holding Current - mA TC08AE 1000 10 1 Vsupply 100 10 Vsupply IGTM VAA = 12 V IG = 0 + 0*1 -60 CASE TEMPERATURE TC08AD 100 + + - Initiating ITM = 100 mA -40 -20 0 20 40 60 80 100 TC - Case Temperature - C DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 -60 -40 VAA = 12 V -20 0 20 40 60 80 100 120 TC - Case Temperature - C Figure 3. 120 + + Figure 4. 3