MCD95-16io8B Thyristor \ Diode Module VRRM = 2x 1600 V I TAV = 116 A VT = 1.28 V Phase leg Part number MCD95-16io8B Backside: isolated 3 1 5 2 Features / Advantages: Applications: Package: TO-240AA Thyristor for line frequency Planar passivated chip Long-term stability Direct Copper Bonded Al2O3-ceramic Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Isolation Voltage: 4800 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Base plate: DCB ceramic Reduced weight Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. (c) 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200701e MCD95-16io8B Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1600 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1600 V TVJ = 25C 200 A TVJ = 125C 5 mA I T = 150 A TVJ = 25C 1.29 V 1.50 V 1.28 V TVJ = 125 C I T = 150 A I T = 300 A I TAV average forward current TC = 85 C I T(RMS) RMS forward current 180 sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current It value for fusing V VR/D = 1600 V I T = 300 A Ptot max. Unit 1700 V 1.70 V T VJ = 125 C 116 A 182 A TVJ = 125 C 0.85 V 2.4 m 0.22 K/W 0.2 K/W TC = 25C 455 W t = 10 ms; (50 Hz), sine TVJ = 45C 2.25 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 2.43 kA t = 10 ms; (50 Hz), sine TVJ = 125 C 1.92 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 2.07 kA t = 10 ms; (50 Hz), sine TVJ = 45C 25.3 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V 24.6 kAs t = 10 ms; (50 Hz), sine TVJ = 125 C 18.3 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 125 C 17.7 kAs 119 t P = 300 s pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 125 C; f = 50 Hz repetitive, IT = 250 A t P = 200 s; di G /dt = 0.45 A/s; (dv/dt)cr critical rate of rise of voltage V = VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 C TVJ = -40 C 2.6 V I GT gate trigger current VD = 6 V TVJ = 25 C 150 mA TVJ = -40 C 200 mA VGD gate non-trigger voltage TVJ = 125C 0.2 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 C 450 mA I G = 0.45 A; V = VDRM 150 A/s non-repet., I T = 116 A 500 A/s 1000 V/s TVJ = 125C R GK = ; method 1 (linear voltage rise) VD = VDRM tp = 10 s 2.5 V IG = 0.45 A; di G /dt = 0.45 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 200 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/s VR = 100 V; I T = 150A; V = VDRM TVJ =100 C di/dt = 10 A/s dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2020 IXYS all rights reserved 185 s 20 V/s t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20200701e MCD95-16io8B Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 200 Unit A -40 125 C -40 100 C 125 C 81 Weight g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute Ordering Number MCD95-16io8B Similar Part MCMA110PD1600TB MCMA140PD1600TB Equivalent Circuits for Simulation I V0 13.0 16.0 t = 1 second isolation voltage Ordering Standard terminal to terminal terminal to backside R0 50/60 Hz, RMS; IISOL 1 mA Marking on Product MCD95-16io8B Package TO-240AA-1B TO-240AA-1B * on die level Delivery Mode Box mm 16.0 mm 4800 V 4000 V Quantity 36 Code No. 453374 Voltage class 1600 1600 T VJ = 125C Thyristor V 0 max threshold voltage 0.85 V R0 max slope resistance * 1.2 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2020 IXYS all rights reserved 9.7 Data according to IEC 60747and per semiconductor unless otherwise specified 20200701e MCD95-16io8B Outlines TO-240AA 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2020 IXYS all rights reserved 1 5 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20200701e MCD95-16io8B Thyristor 105 2500 2000 DC 180 sin 120 60 30 200 50 Hz 80% VRRM TVJ = 45C TVJ = 125C ITSM 250 VR = 0 V 150 I 2t 1500 ITAVM [A2s] [A] 100 TVJ = 45C [A] 1000 50 TVJ = 125C 500 0.001 104 0.01 0.1 1 0 1 2 t [s] 3 4 5 6 7 8 910 0 Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration 50 Fig. 2 I2t versus time (1-10 ms) Fig. 3 Max. forward current at case temperature 10 1: IGT, TVJ = 125C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C RthKA K/W 0.4 0.6 0.8 1 1.2 1.5 2 3 200 150 DC 180 sin 120 60 30 [W] 100 75 100 125 150 TC [C] 250 Ptot 25 t [ms] VG 2 [V] 3 1 5 1 6 4 50 0 0 50 100 150 0 50 ITAVM, IFAVM [A] 0.1 100 IGD, TVJ = 125C 1 10 Ta [C] 100 1000 10000 IG [mA] Fig. 5 Gate trigger characteristics Fig. 4 Power dissipation vs. on-state current & ambient temperature (per thyristor or diode) 1000 1000 TVJ = 25C RthKA K/W 800 Ptot 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W 0.03 0.06 0.08 0.12 0.15 0.3 0.5 600 [W] 400 Limit tgd [s] 10 Circuit B6 3x MCC95 or 200 typ. 100 3x MCD95 0 0 100 200 300 0 IdAVM [A] 50 100 150 Ta [C] Fig. 6 Three phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. (c) 2020 IXYS all rights reserved 1 10 100 1000 IG [mA] Fig. 7 Gate controlled delay time Data according to IEC 60747and per semiconductor unless otherwise specified 20200701e MCD95-16io8B Rectifier 1200 Circuit W3 3x MCC95 or 3x MCD95 1000 RthKA K/W 0.03 0.06 0.08 0.12 0.15 0.3 0.5 800 Ptot 600 [W] 400 200 0 0 50 100 150 200 250 0 50 IRMS [A] 100 150 Ta [C] Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 0.30 RthJC for various conduction angles d: d RthJC [K/W] DC 0.22 180 0.23 120 0.25 60 0.27 30 0.28 0.25 0.20 30 60 120 180 DC ZthJC 0.15 [K/W] Constants for ZthJC calculation: 0.10 i Rthi [K/W] 1 0.0066 2 0.0678 3 0.1456 0.05 0.00 10-3 10 -2 10 -1 10 0 10 1 ti [s] 0.0019 0.0477 0.3440 10 2 t [s] Fig. 9 Transient thermal impedance junction to case (per thyristor/diode) 0.5 RthJK for various conduction angles d: d RthJK [K/W] DC 0.42 180 0.43 120 0.45 60 0.47 30 0.48 0.4 ZthJK 0.3 [K/W] 0.2 30 60 120 180 DC Constants for ZthJK calculation: i Rthi [K/W] 1 0.0066 2 0.0678 3 0.1456 4 0.2000 0.1 0.0 10 -3 10 -2 10 -1 10 0 10 1 10 2 ti [s] 0.0019 0.0477 0.3440 1.3200 10 3 t [s] Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode) IXYS reserves the right to change limits, conditions and dimensions. (c) 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200701e