MCD95-16io8B
3 1 25
Phase leg
Thyristor \ Diode Module
Part number
MCD95-16io8B
Backside: isolated
TAV
T
V V1.28
RRM
116
1600
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
TO-240AA
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
4800
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
Disclaimer Notice
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions. 20200701eData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
MCD95-16io8B
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.29
R0.22 K/W
min.
116
VV
200T = 25°C
VJ
T = °C
VJ
mA5V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
455 WT = 25°C
C
150
1600
forward voltage drop
total power dissipation
Conditions
1.50
T = 25°C
VJ
125
V
T0
V0.85T = °C
VJ
125
r
T
2.4 mΩ
V1.28T = °C
VJ
I = A
T
V
150
1.70
I = A300
I = A300
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1600T = 25°C
VJ
IA182
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
125
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
119
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
125
I²t T = 45°C
value for fusing
T = °C125
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
125
2.25
2.43
18.3
17.7
kA
kA
kA
kA
1.92
2.07
25.3
24.6
1600
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 125 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 125°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
250 A
T
P
G
= 0.45
di /dt A/µs;
G
=0.45
DRM
cr
V = ⅔ V
DRM
GK
1000
2.5 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
150 mA
T = °C-40
VJ
2.6 V
200 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
10 mA
V = ⅔ V
D DRM
125
latching current
T = °C
VJ
450 mA
I
L
25t µs
p
= 10
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
holding current
T = °C
VJ
200 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
V = ½ V
D DRM
turn-off time
T = °C
VJ
185 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 150 V = ⅔ V
DRM
tµs
p
= 200
non-repet., I = 116 A
T
100
R
thCH
thermal resistance case to heatsink
K/W
Rectifier
1700
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.2
IXYS reserves the right to change limits, conditions and dimensions. 20200701eData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
MCD95-16io8B
Ratings
MCMA140PD1600TB TO-240AA-1B 1600
Package
T
op
°C
M
D
Nm4
mounting torque
2.5
T
VJ
°C125
virtual junction temperature
-40
Weight g81
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
M
T
Nm4
terminal torque
2.5
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
13.0 9.7
16.0 16.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
200 A
per terminal
100-40
terminal to terminal
TO-240AA
Similar Part Package Voltage class
MCMA110PD1600TB TO-240AA-1B 1600
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MCD95-16io8B 453374Box 36MCD95-16io8BStandard
4800
ISOL
T
stg
°C125
storage temperature
-40
4000
threshold voltage
V0.85
mΩ
V
0 max
R
0 max
slope resistance *
1.2
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
°C
* on die level
125
IXYS reserves the right to change limits, conditions and dimensions. 20200701eData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
MCD95-16io8B
3 1 25
Outlines TO-240AA
IXYS reserves the right to change limits, conditions and dimensions. 20200701eData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
MCD95-16io8B
0 50 100
T
a
[°C]
T
C
[°C]
t [ms]t [s]
0.001 0.01 0.1 1
500
1000
1500
2000
2 3 4 5 6 7 8 9 011
10
4
1
0
5
0 25 50 75 100 125 150
0
50
100
150
200
250
I
TSM
[A]
I
TAVM
[A]
0 50 100 150
0
50
100
150
200
250
P
tot
[W]
I
TAVM
, I
FAVM
[A]
0 50 100 1500 100 200 300
0
200
400
600
800
1000
I
2
t
[A
2
s]
T
VJ
= 45°C
180 ° sin
120 °
60°
30°
DC
T
VJ
= 125°C
50 Hz
80% V
RRM
T
VJ
= 45°C
T
VJ
= 125°C
P
tot
[W]
I
dAVM
[A] T
a
[°C]
V
R
= 0 V
B6
Circuit
3x MCC95 or
3x MCD95
180 ° sin
120 °
60°
30°
DC
R
thKA
K/W
0.4
0.6
0.8
1
1.2
1.5
2
3
R
thKA
K/W
0.3
0.08
0.12
0.15
0.03
0.06
0.5
Fig. 1 Surge overload current I
TSM
,
I
FSM
: Crest value, t: duration
Fig. 2 I
2
t versus time (1-10 ms) Fig. 3 Max. forward current
at case temperature
Fig. 4 Power dissipation vs. on-state current & ambient temperature
(per thyristor or diode)
Fig. 6 Three phase rectifier bridge: Power dissipation vs. direct
output current and ambient temperature
Fig. 5 Gate trigger characteristics
1 10 100 1000 10000
0.1
1
10
V
G
[V]
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
I
GD
, T
VJ
= 125°C
3
4
2
1
56
I
G
[mA]
Fig. 7 Gate controlled delay time
10 100 1000
1
10
100
1000
I
G
[mA]
T
VJ
= 25°C
t
gd
[µs]
Limittyp.
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20200701eData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
MCD95-16io8B
0 50 100 150 200 250
0
200
400
600
800
1000
1
2
0
0
t [s]
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.0
0.1
0.2
0.3
0.4
0.5
Z
thJC
[K/W]
I
RMS
[A]
P
tot
[W]
0 50 100 150
T
a
[°C]
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.05
0.10
0.15
0.20
0.25
0.30
Z
thJK
[K/W]
t [s]
Circuit
W3
3x MCC95 or
3x MCD95
0.15
0.12
0.08
R
thKA
K/W
0.3
0.03
0.06
0.5
DC
180°
120°
60°
30°
Fig. 8 Three phase AC-controller: Power dissipation versus
RMS output current and ambient temperature
Fig. 9 Transient thermal impedance junction to case (per thyristor/diode)
F
i
g.
1
0
T
r
ansi
e
nt
therma
l
impeda
n
ce
j
unct
i
on
to
h
e
ats
i
nk
(
p
e
r
t
h
yristor/d
i
ode
)
DC
180°
120°
60°
30°
R
thJC
for various conduction angles d:
d R
thJC
[K/W]
DC 0.22
180° 0.23
120° 0.25
60° 0.27
30° 0.28
Constants for Z
thJC
calculation:
i R
thi
[K/W] t
i
[s]
1 0.0066 0.0019
2 0.0678 0.0477
3 0.1456 0.3440
R
thJK
for various conduction angles d:
d R
thJK
[K/W]
DC 0.42
180° 0.43
120° 0.45
60° 0.47
30° 0.48
Constants for Z
thJK
calculation:
i R
thi
[K/W] t
i
[s]
1 0.0066 0.0019
2 0.0678 0.0477
3 0.1456 0.3440
4 0.2000 1.3200
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20200701eData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved