Power Transistors MB 6932854 0011159 117 MMBPNCe 25D1528_ PANASONIC INDL/ELEK( 2$D 1528 SEMI) 6B9E D Silicon NPN Epitaxial Planar Type Power Switching , m Package Dimensions = , Unit mm . :105+05 @ Features 2 Toe 4.8max. . . . Su -omax, High speed switching esl 76min, High collector-base voltage (Vero) . t Good linearity of DC current gain (hye) x = uw] 1 , . 4 L Absolute Maximum Ratings (Tc=25C) a Item. Symbol Value Unit a = Tp o-8 $6.1 al Collector-base voltage Vecso 130 Vv 2 Collector-emitter voltage Vero 80 Vv soar Emitter-base voltage VeBo Vv sod Peak collector current - Icp A Collector current Ip A 123 - 1: Base Collector power |TE=25T | 30 Ww 2: Collector dissipation Ta=25C 14 3 : Emitter .ETAJ : SC-46(a) Junction temperature T; 150 Cc JEDEC : TO--220AB(a) Storage temperature Tote 55~ +150 Cc @ Electrical Characteristics (Tc=25C) Item Symbol Condition min. typ. max. Unit Collector cutoff current cso Vcern=100 V, In=0 10 us Emitter cutoff current leno Ves=9V, Ic=0 50 uA Collector-emitter voltage Vero Ic=l0mA, Ip=0 80 Vv . hres Ver=2V, [c=0.1A 45 DC current gain - hre2* Vee=2V, Ic=1A 60 260 Collector-emitter saturation voltage* | = Veetsan Ic=2 A, Ip=0.1A | 0.5 Vv Base-emitter saturation voltage Veetsan Ic=2 A, Tp=0.1A 1.2 Vv Transition frequency fr Vee =10V, 1=0.5A, f= 10MHz 25 MHz Turn-on time ton Ic=2A 0.5 US Storage time tag Ip1=0.1A, Inp2e=0.1A 1.5 us Fall time tr Veo=50V 0.5 US *hrgy Classifications Class . R , Q P here 60~ 120 90~180 130~ 260 749 Panasonic - Power Transistors ME 6932854 oO O14160 931 MEPNC2 2SD1528 PANASONIC INDL/ PcoTa IcVce ELEK( SEMI) BOE D Vecrisat)Ic 100 Tc=Ta Te=25C c le/Ig=20 With a 100x 100x z Al heat sink la= 3 30 ~ With a 50% 50X 2mm z = Al heat sink = 10 a ) Without heat sink 2 & = (Pe=1,4W) = s o g = $ 4 & (1) E Ss g E Bou 3S a s 5 3 a gs 03 hm a & o & 3 t 0.1 5 ( 3 3S 9.03 (4) 0 0.01 0 25 50 75 100 125 150 0 1 2 3 4 5 6 0.01 6.03 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector-emitter voltage Vcr (V) Collector current [Ic (A) VeE(eat)Ic hreIc tons tstg, tr-Ic 10000 Ic Ig =20 Base-emitter saturation voltage V DC current gain he: S oa 3 1 0.01 0.03 0.1 03 1 3 10 0.01 0.03 0.1 0.3 1 Coltector current I, (A) Collector current I Area of safe operation (ASO) 0 Non repetitive pulse Te=297c 10 108 (1 (2 } } 30 S Collector current Tp (A) Transient thermal resistance Rin) (C/W) 0.3 OL 10} 0.03 0.01 16? 3 10 30 6100 6300 = 1000 10 * 10-3 Collector-emitter voltage Vcr (V) Pulsed tw=1ms Duty cycle=1% Ic ]y=20 (Tai = ~Te2) Veco=50V To= 25C Switching time tur, tag te (us) 3 (A) id 1 2 3 Collector current I; (A) 4 Rey t Without heat sink With a 100x100 2mm Al heat 10? 108 10* Time t (s) Panasonic 750