MDO 500 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 IFRMS = 880 A 560 A IFAVM = VRRM = 1200-2200 V 3 Type 2 MDO 500-12N1 MDO 500-14N1 MDO 500-16N1 MDO 500-18N1 MDO 500-20N1 MDO 500-22N1 E72873 Symbol Conditions IFRMS IFAVM TVJ = TVJM TC = 85C; 180 sine IFSM TVJ = 45C; VR = 0 t = 10 ms t = 8.3 ms TVJ = TVJM; VR = 0 I2t Maximum Ratings 880 560 A A (50 Hz) (60 Hz) 15000 16000 A A t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 13000 14400 A A TVJ = 45C; VR = 0 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 1125000 1062000 A2s A2s TVJ = TVJM; VR = 0 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 845000 813000 As A2s -40...+140 140 -40...+125 C C C 3000 3600 V~ V~ 4.5 - 7 11 - 13 Nm Nm 650 g TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL < 1 mA Md Mounting torque (M6) Terminal connection torque (M8) Weight Typical including screws Symbol Conditions t = 1 min t=1s 2 VR = VRRM TVJ = TVJM 30 mA TVJ = 25C 1.3 V TVJ = TVJM 0.8 0.38 V mW 0.072 0.096 K/W K/W 21.7 9.6 50 mm mm m/s2 IT = 1200 A For power-loss calculations only RthJC RthJK DC current DC current dS dA a Creeping distance on surface Creepage distance in air Maximum allowable acceleration Applications * Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies Advantages * Simple mounting * Improved temperature and power cycling * Reduced protection circuits max. IRRM VF * International standard package * Direct Copper Bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ * UL registered, E 72873 Characteristic Values typ. VT0 rt Features Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2012 IXYS All rights reserved 20121206a 1-4 MDO 500 Dimensions in mm (1 mm = 0.0394") 43 49 35 28.5 4567 50 22.5 1 2 38 52 +0 -1,4 M8 x20 3 6.2 80 92 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2012 IXYS All rights reserved 20121206a 2-4 MDO 500 14000 107 1000 VR = 0V 12000 800 50 Hz 80 % VRRM TVJ = 45C TVJ = 140C 10000 ITSM DC 180 sin 120 60 30 IFAVM 600 2 8000 It [A] 106 2 6000 As [A] TVJ = 45C 400 TVJ = 140C 4000 200 2000 0 0.001 0.01 0.1 105 1 t [s] Fig. 1 Surge overload current IFSM: Crest value, t: duration 1 0 10 0 25 50 75 100 125 150 TC [C] Fig. 3 Maximum forward current at case temperature t [ms] 2 Fig. 2 I t versus time (1-10 ms) 1200 1600 RthKA K/W 800 Ptot [W] 1400 0.03 0.07 0.12 0.2 0.3 0.4 0.6 1000 600 1200 IF 1000 [A] DC 180 sin 120 60 30 400 600 400 TVJ = 125C 200 0 800 TVJ = 25C 200 0 200 400 600 800 0 25 50 75 100 125 150 TA [C] IFAVM [A] 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF [V] Fig. 4 Power dissipation vs. forward current and ambient temperature Fig. 5 Forward current IF versus VF 3200 R 2800 RthKA K/W L 0.015 0.03 0.04 0.05 0.07 0.01 0.14 2400 2000 Ptot 1600 [W] 1200 Circuit B2 4xMDO500 800 400 0 0 300 600 900 1200 IdAVM [A] 0 25 50 75 100 125 150 TA [C] Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature. R = resistive load, L = inductive load IXYS reserves the right to change limits, test conditions and dimensions. (c) 2012 IXYS All rights reserved 20121206a 3-4 MDO 500 5000 RthKA K/W 0.01 0.02 0.03 0.045 0.06 0.08 0.12 4000 Ptot [W] 3000 2000 Circuit B6 6xMDO500 1000 0 0 300 600 900 1200 1500 0 25 50 IdAVM [A] 75 100 125 150 TA [C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 0.12 RthJC for various conduction angles d: d RthJC (K/W) DC 0.072 180 0.0768 120 0.081 60 0.092 30 0.111 0.10 0.08 ZthJC 0.06 30 60 120 180 DC [K/W] 0.04 Constants for ZthJC calculation: ti (s) i Rthi (K/W) 1 0.0035 0.0054 2 0.0186 0.098 3 0.0432 0.54 4 0.0067 12 0.02 0.00 10-3 10-2 10-1 t [s] 100 101 102 Fig. 7 Transient thermal impedance junction to case RthJK for various conduction angles d: d RthJK (K/W) DC 0.096 180 0.1 120 0.105 60 0.116 30 0.135 0.14 0.12 0.10 ZthJK 0.08 0.06 [K/W] 30 60 120 180 DC 0.04 0.02 0.00 10-3 10-2 10-1 t [s] 100 101 102 Constants for ZthJK calculation: ti (s) i Rthi (K/W) 1 0.0035 0.0054 2 0.0186 0.098 3 0.0432 0.54 4 0.0067 12 5 0.024 12 Fig. 8 Transient thermal impedance junction to heatsink IXYS reserves the right to change limits, test conditions and dimensions. (c) 2012 IXYS All rights reserved 20121206a 4-4