KST-2024-000 1
BC807
PNP Silicon Transistor
Descriptions
• High current application
• Switching application
Features
• Suitable for AF-Driv er stage and low power output stages
• Complementary Pair with BC817
Ordering Information
Type NO. Marking Package Code0
BC807 LA SOT-23
: hFE rank
Outline Dimensions unit :
mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
PIN Conne cti ons
1. Bas e
2. Emitter
3. Collector
2.4±0.1
1.30±0.1
0.45~0.60
0.4 Typ.
2.9±0.1
1.12 Max.
0.38
0~0.1
0.124 -0.03
+0.05
3
1
2
1.90 Typ.
0.2 Min.
KST-2024-000 2
BC807
Absolute maximum ratings (Ta=25°
°°
°C)
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO -50 V
Collector-Emitter voltage VCEO -35 V
Emitter-base voltage VEBO -5 V
Collector current IC-800 mA
Collector dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg -55~150 °C
Electrical Characteristics (Ta=25°
°°
°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector - Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -35 - - V
Base-Emitter tu r n on voltage VBE(ON) VCE=-1V, IC=-300mA - - -1.2 V
Collec tor -Emitter s a turation voltage VCE(sat) IC=-500mA, IB=-50mA - - -700 mV
Collector cut-off current ICBO VCB=-25V, IE=0 - - -100 nA
DC current gain hFE*VCE=-1V, IC=-100mA 100 - 630 -
Transition frequency fTVCB=-5V, IE=10mA
f=100MHz - 100 - MHz
Collec tor output capac itance Cob VCB=-10V, I E=0, f=1MHz - 16 - pF
* : hFE rank / 16(A):100 ~ 250, 25(B):160 ~ 400, 40(C):250 ~ 630
KST-2024-000 3
BC807
Electrical Characteristic Curves
Fig. 5 VCE(sat) - IC
Fig. 3 IC - VCE
Fig. 2 IC -VBE
Fig. 1 Pc-Ta
Fig. 4 hFE - IC
