DS90CP22
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DS90CP22 800 Mbps 2x2 LVDS Crosspoint Switch
Check for Samples: DS90CP22
1FEATURES DESCRIPTION
DS90CP22 is a 2x2 crosspoint switch utilizing LVDS
2 DC - 800 Mbps Low Jitter, Low Skew Operation (Low Voltage Differential Signaling) technology for
65 ps (typ) of Pk-Pk Jitter with PRBS = 2231low power, high speed operation. Data paths are fully
Data Pattern at 800 Mbps differential from input to output for low noise
Single +3.3 V Supply generation and low pulse width distortion. The non-
blocking design allows connection of any input to any
Less than 330 mW (typ) Total Power output or outputs. LVDS I/O enable high speed data
Dissipation transmission for point-to-point interconnects. This
Non-Blocking "'Switch Architecture"' device can be used as a high speed differential
Balanced Output Impedance crosspoint, 2:1 mux, 1:2 demux, repeater or 1:2
signal splitter. The mux and demux functions are
Output Channel-to-Channel Skew is 35 ps (typ) useful for switching between primary and backup
Configurable as 2:1 mux, 1:2 demux, Repeater circuits in fault tolerant systems. The 1:2 signal
or 1:2 Signal Splitter splitter and 2:1 mux functions are useful for
LVDS Receiver Inputs Accept LVPECL Signals distribution of serial bus across several rack-mounted
backplanes.
Fast Switch Time of 1.2ns (typ) The DS90CP22 accepts LVDS signal levels, LVPECL
Fast Propagation Delay of 1.3ns (typ) levels directly or PECL with attenuation networks.
Receiver Input Threshold < ±100 mV The individual LVDS outputs can be put into TRI-
Available in 16 Lead TSSOP and SOIC STATE by use of the enable pins.
Packages
Conforms to ANSI/TIA/EIA-644-1995 LVDS For more details, please refer to the Application
Information section of this datasheet.
Standard
Operating Temperature: 40°C to +85°C
Connection Diagram
Figure 1. SOIC-16 Package
or
TSSOP-16 Package
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 2000–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
DS90CP22
SNLS053E MARCH 2000REVISED APRIL 2013
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Figure 2. Diff. Output Eye-Pattern in 1:2 split mode @ 800 Mbps
Conditions: 3.3 V, PRBS = 2231 data pattern,
VID = 300mV, VCM = +1.2 V, 200 ps/div, 100 mV/div
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings(1)(2)
Supply Voltage (VCC)0.3V to +4V
CMOS/TTL Input Voltage (EN0, EN1, SEL0, SEL1) 0.3V to (VCC + 0.3V)
LVDS Receiver Input Voltage (IN+, IN)0.3V to +4V
LVDS Driver Output Voltage (OUT+, OUT)0.3V to +4V
LVDS Output Short Circuit Current Continuous
Junction Temperature +150°C
Storage Temperature Range 65°C to +150°C
Lead Temperature (Soldering, 4 sec.) +260°C
Maximum Package Power Dissipation at 16L SOIC 1.435 W
25°C 16L SOIC Package Derating 11.48 mW/°C above +25°C
16L TSSOP 0.866 W
16L TSSOP Package Derating 9.6 mW/°C above +25°C
ESD Rating (HBM, 1.5kΩ, 100pF) > 5 kV
(EIAJ, 0Ω, 200pF) > 250 V
(1) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(2) “Absolute Maximum Ratings” are these beyond which the safety of the device cannot be verified. They are not meant to imply that the
device should be operated at these limits. “Electrical Characteristics” provides conditions for actual device operation.
Recommended Operating Conditions Min Typ Max Units
Supply Voltage (VCC) 3.0 3.3 3.6 V
Receiver Input Voltage 0 VCC V
Operating Free Air Temperature -40 +25 +85 °C
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Electrical Characteristics(1)
Over recommended operating supply and temperature ranges unless otherwise specified
Symbol Parameter Conditions Min Typ Max Units
CMOS/TTL DC SPECIFICATIONS (EN0,EN1,SEL0,SEL1)
VIH High Level Input Voltage 2.0 VCC V
VIL Low Level Input Voltage GND 0.8 V
IIH High Level Input Current VIN = 3.6V or 2.0V; VCC = 3.6V +7 +20 μA
IIL Low Level Input Current VIN = 0V or 0.8V; VCC = 3.6V ±1 ±10 μA
VCL Input Clamp Voltage ICL =18 mA 0.8 1.5 V
LVDS OUTPUT DC SPECIFICATIONS (OUT0,OUT1)
VOD Differential Output Voltage RL= 75Ω270 365 475 mV
RL= 75Ω, VCC = 3.3V, TA= 25°C 285 365 440 mV
ΔVOD Change in VOD between Complimentary Output States 35 mV
VOS Offset Voltage(2) 1.0 1.2 1.45 V
ΔVOS Change in VOS between Complimentary Output States 35 mV
IOZ Output TRI-STATE Current TRI-STATE Output, ±1 ±10 μA
VOUT = VCC or GND
IOFF Power-Off Leakage Current VCC = 0V; VOUT = 3.6V or GND ±1 ±10 μA
IOS Output Short Circuit Current VOUT+ OR VOUT= 0V 15 25 mA
IOSB Both Outputs Short Circuit Current VOUT+ AND VOUT= 0V 30 50 mA
LVDS RECEIVER DC SPECIFICATIONS (IN0,IN1)
VTH Differential Input High Threshold VCM = +0.05V or +1.2V or +3.25V, 0 +100 mV
VTL Differential Input Low Threshold Vcc = 3.3V 100 0 mV
VCMR Common Mode Voltage Range VID = 100mV, Vcc = 3.3V 0.05 3.25 V
IIN VIN = +3.0V, VCC = 3.6V or 0V ±1 ±10 μA
Input Current VIN = 0V, VCC = 3.6V or 0V ±1 ±10 μA
SUPPLY CURRENT
ICCD Total Supply Current RL= 75Ω, CL= 5 pF, EN0 = EN1 = High 98 125 mA
ICCZ TRI-STATE Supply Current EN0 = EN1 = Low 43 55 mA
(1) All typical are given for VCC = +3.3V and TA= +25°C, unless otherwise stated.
(2) VOS is defined and measured on the ATE as (VOH + VOL) / 2.
AC Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified(1)
Symbol Parameter Conditions Min Typ Max Units
TSET Input to SEL Setup Time(2), (Figure 3 and Figure 4) 0.7 0.5 ns
THOLD Input to SEL Setup Time(2), (Figure 3 and Figure 4) 1.0 0.5 ns
TSWITCH SEL to Switched Output, (Figure 3 and Figure 4) 0.9 1.2 1.7 ns
TPHZ Disable Time (Active to TRI-STATE) High to Z, Figure 5 2.1 4.0 ns
TPLZ Disable Time (Active to TRI-STATE) Low to Z, Figure 5 3.0 4.5 ns
TPZH Enable Time (TRI-STATE to Active) Z to High, Figure 5 25.5 55.0 ns
TPZL Enable Time (TRI-STATE to Active) Z to Low, Figure 5 25.5 55.0 ns
TLHT Output Low-to-High Transition Time, 20% to 80%, Figure 7 290 400 580 ps
THLT Output High-to-Low Transition Time, 80% to 20%, Figure 7 290 400 580 ps
(1) The parameters are specified by design. The limits are based on statistical analysis of the device performance over PVT (process,
voltage and temperature) range.
(2) TSET and THOLD time specify that data must be in a stable state before and after the SEL transition.
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AC Electrical Characteristics (continued)
Over recommended operating supply and temperature ranges unless otherwise specified(1)
Symbol Parameter Conditions Min Typ Max Units
TJIT VID = 300mV; 50% Duty Cycle; VCM =40 90 ps
1.2V at 800Mbps
LVDS Data Path Peak to Peak Jitter(3) VID = 300mV; PRBS=223-1 data 65 120 ps
pattern; VCM = 1.2V at 800Mbps
TPLHD Propagation Low to High Delay, Figure 8 0.9 1.3 1.6 ns
Propagation Low to High Delay, Figure 8 VCC = 3.3V, TA= 25°C 1.0 1.3 1.5 ns
TPHLD Propagation High to Low Delay, Figure 8 0.9 1.3 1.6 ns
Propagation High to Low Delay, Figure 8 VCC = 3.3V, TA= 25°C 1.0 1.3 1.5 ns
TSKEW Pulse Skew |TPLHD - TPHLD| 0 225 ps
TCCS Output Channel-to-Channel Skew, Figure 9 35 80 ps
(3) The parameters are specified by design. The limits are based on statistical analysis of the device performance over PVT range with the
following equipment test setup: HP70004A (display mainframe) with HP70841B (pattern generator), 5 feet of RG-142 cable with DUT
test board and HP83480A (digital scope mainframe) with HP83483A (20GHz scope module).
AC Timing Diagrams
Figure 3. Input-to-Select rising edge setup and hold times and mux switch time
Figure 4. Input-to-Select falling edge setup and hold times and mux switch time
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Figure 5. Output active to TRI-STATE and TRI-STATE to active output time
Figure 6. LVDS Output Load
Figure 7. LVDS Output Transition Time
Figure 8. Propagation Delay Low-to-High and High-to-Low
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Figure 9. Output Channel-to-Channel Skew in 1:2 splitter mode
PIN DESCRIPTIONS
Pin Name # of Pin Input/Output Description
IN+ 2 I Non-inverting LVDS input
IN - 2 I Inverting LVDS input
OUT+ 2 O Non-inverting LVDS Output
OUT - 2 O Inverting LVDS Output
A logic low on the Enable puts the LVDS output into TRI-STATE and
EN 2 I reduces the supply current
SEL 2 I 2:1 mux input select
GND 1 P Ground
VCC 1 P Power Supply
NC 2 No Connect
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APPLICATION INFORMATION
MODES OF OPERATION
The DS90CP22 provides three modes of operation. In the 1:2 splitter mode, the two outputs are copies of the
same single input. This is useful for distribution / fan-out applications. In the repeater mode, the device operates
as a 2 channel LVDS buffer. Repeating the signal restores the LVDS amplitude, allowing it to drive another
media segment. This allows for isolation of segments or long distance applications. The switch mode provides a
crosspoint function. This can be used in a system when primary and redundant paths are supported in fault
tolerant applications.
INPUT FAIL-SAFE
The receiver inputs of the DS90CP22 do not have internal fail-safe biasing. For point-to-point and multidrop
applications with a single source, fail-safe biasing may not be required. When the driver is off, the link is in-
active. If fail-safe biasing is required, this can be accomplished with external high value resistors. The IN+ should
be pull to Vcc with 10kΩand the INshould be pull to Gnd with 10kΩ. This provides a slight positive differential
bias, and sets a known HIGH state on the link with a minimum amount of distortion.
UNUSED LVDS INPUTS
Unused LVDS Receiver inputs should be tied off to prevent the high-speed sensitive input stage from picking up
noise signals. The open input to IN+ should be pull to Vcc with 10kΩand the open input to INshould be pull to
Gnd with 10kΩ.
UNUSED CONTROL INPUTS
The SEL and EN control input pins have internal pull down devices. Unused pins may be tied off or left as no-
connect (if a LOW state is desired).
EXPANDING THE NUMBER OF OUTPUT PORTS
To expand the number of output ports, more than one DS90CP22 can be used. Total propagation delay through
the devices should be considered to determine the maximum expansion. For example, if 2 X 4 is desired, than
three of the DS90CP22 are required. A minimum of two device propagation delays (2 x 1.3ns = 2.6ns (typ)) can
be achieved. For a 2 X 8, a total of 7 devices must be used with propagation delay of 3 x 1.3ns = 3.9ns (typ).
The power consumption will increase proportional to the number of devices used.
PCB LAYOUT AND POWER SYSTEM BYPASS
Circuit board layout and stack-up for the DS90CP22 should be designed to provide noise-free power to the
device. Good layout practice also will separate high frequency or high level inputs and outputs to minimize
unwanted stray noise pickup, feedback and interference. Power system performance may be greatly improved by
using thin dielectrics (4 to 10 mils) for power/ground sandwiches. This increases the intrinsic capacitance of the
PCB power system which improves power supply filtering, especially at high frequencies, and makes the value
and placement of external bypass capacitors less critical. External bypass capacitors should include both RF
ceramic and tantalum electrolytic types. RF capacitors may use values in the range 0.01 µF to 0.1 µF. It is
recommended practice to use two vias at each power pin of the DS90CP22 as well as all RF bypass capacitor
terminals. Dual vias reduce the interconnect inductance by up to half, thereby reducing interconnect inductance
and extending the effective frequency range of the bypass components.
The outer layers of the PCB may be flooded with additional ground plane. These planes will improve shielding
and isolation as well as increase the intrinsic capacitance of the power supply plane system. Naturally, to be
effective, these planes must be tied to the ground supply plane at frequent intervals with vias. Frequent via
placement also improves signal integrity on signal transmission lines by providing short paths for image currents
which reduces signal distortion.
There are more common practices which should be followed when designing PCBs for LVDS signaling.
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COMPATIBILITY WITH LVDS STANDARD
The DS90CP22 is compatible with LVDS and Bus LVDS Interface devices. It is enhanced over standard LVDS
drivers in that it is able to driver lower impedance loads with standard LVDS levels. Standard LVDS drivers
provide 330mV differential output with a 100Ωload. The DS90CP22 provides 365mV with a 75Ωload or 400mV
with 100Ωloads. This extra drive capability is useful in certain multidrop applications.
In backplane multidrop configurations, with closely spaced loads, the effective differential impedance of the line is
reduced. If the mainline has been designed for 100Ωdifferential impedance, the loading effects may reduce this
to the 70Ωrange depending upon spacing and capacitance load. Terminating the line with a 75Ωload is a better
match than with 100Ωand reflections are reduced.
BLOCK DIAGRAM
Table 1. Function Table
SEL0 SEL1 OUT0 OUT1 Mode
0 0 IN0 IN0 1:2 splitter
0 1 IN0 IN1 repeater
1 0 IN1 IN0 switch
1 1 IN1 IN1 1:2 splitter
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Typical Performance Characteristics
Diff. Output Voltage (VOD) vs. Resistive Load (RT) Peak-to-Peak Output Jitter at VCM = +0.4V vs. VID
Figure 10. Figure 11.
Peak-to-Peak Output Jitter at VCM = +1.2V vs. VID Peak-to-Peak Output Jitter at VCM = +1.6V vs. VID
Figure 12. Figure 13.
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REVISION HISTORY
Changes from Revision D (April 2013) to Revision E Page
Changed layout of National Data Sheet to TI format ............................................................................................................ 9
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PACKAGE OPTION ADDENDUM
www.ti.com 11-Jan-2021
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead finish/
Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
DS90CP22M-8 NRND SOIC D 16 48 Non-RoHS
& Green Call TI Call TI -40 to 85 DS90CP22M
-8
DS90CP22M-8/NOPB ACTIVE SOIC D 16 48 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 DS90CP22M
-8
DS90CP22MT NRND TSSOP PW 16 92 Non-RoHS
& Green Call TI Call TI -40 to 85 DS90CP
22MT
DS90CP22MT/NOPB ACTIVE TSSOP PW 16 92 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 DS90CP
22MT
DS90CP22MTX/NOPB ACTIVE TSSOP PW 16 2500 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 DS90CP
22MT
DS90CP22MX-8/NOPB ACTIVE SOIC D 16 2500 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 DS90CP22M
-8
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
PACKAGE OPTION ADDENDUM
www.ti.com 11-Jan-2021
Addendum-Page 2
(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
DS90CP22MTX/NOPB TSSOP PW 16 2500 330.0 12.4 6.95 5.6 1.6 8.0 12.0 Q1
DS90CP22MX-8/NOPB SOIC D 16 2500 330.0 16.4 6.5 10.3 2.3 8.0 16.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 6-Nov-2015
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
DS90CP22MTX/NOPB TSSOP PW 16 2500 367.0 367.0 35.0
DS90CP22MX-8/NOPB SOIC D 16 2500 367.0 367.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 6-Nov-2015
Pack Materials-Page 2
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PACKAGE OUTLINE
C
14X 0.65
2X
4.55
16X 0.30
0.19
TYP
6.6
6.2
1.2 MAX
0.15
0.05
0.25
GAGE PLANE
-80
BNOTE 4
4.5
4.3
A
NOTE 3
5.1
4.9
0.75
0.50
(0.15) TYP
TSSOP - 1.2 mm max heightPW0016A
SMALL OUTLINE PACKAGE
4220204/A 02/2017
1
89
16
0.1 C A B
PIN 1 INDEX AREA
SEE DETAIL A
0.1 C
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.
5. Reference JEDEC registration MO-153.
SEATING
PLANE
A 20
DETAIL A
TYPICAL
SCALE 2.500
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EXAMPLE BOARD LAYOUT
0.05 MAX
ALL AROUND 0.05 MIN
ALL AROUND
16X (1.5)
16X (0.45)
14X (0.65)
(5.8)
(R0.05) TYP
TSSOP - 1.2 mm max heightPW0016A
SMALL OUTLINE PACKAGE
4220204/A 02/2017
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE: 10X
SYMM
SYMM
1
89
16
15.000
METAL
SOLDER MASK
OPENING METAL UNDER
SOLDER MASK SOLDER MASK
OPENING
EXPOSED METAL
EXPOSED METAL
SOLDER MASK DETAILS
NON-SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK
DEFINED
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EXAMPLE STENCIL DESIGN
16X (1.5)
16X (0.45)
14X (0.65)
(5.8)
(R0.05) TYP
TSSOP - 1.2 mm max heightPW0016A
SMALL OUTLINE PACKAGE
4220204/A 02/2017
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE: 10X
SYMM
SYMM
1
89
16
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