PD - 95953 IRFR2607ZPbF IRFU2607ZPbF AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Description HEXFET(R) Power MOSFET D VDSS = 75V RDS(on) = 22m G Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. ID = 42A S D-Pak IRFR2607Z I-Pak IRFU2607Z Absolute Maximum Ratings Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 45 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 32 ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM 42 180 110 W Linear Derating Factor Gate-to-Source Voltage 0.72 20 W/C V 96 mJ d EAS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value EAS (Tested ) c IAR Avalanche Current EAR TJ Repetitive Avalanche Energy TSTG Storage Temperature Range h 96 See Fig.12a, 12b, 15, 16 g Operating Junction and -55 to + 175 C Mounting Torque, 6-32 or M3 screw 300 (1.6mm from case ) y j Parameter Junction-to-Case RJA Junction-to-Ambient (PCB mount) RJA Junction-to-Ambient j ij y 10 lbf in (1.1N m) Thermal Resistance RJC A mJ Soldering Temperature, for 10 seconds www.irf.com A c PD @TC = 25C Power Dissipation VGS Units Typ. Max. --- 1.38 --- 40 --- 110 Units C/W 1 12/21/04 IRFR/U2607ZPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Drain-to-Source Breakdown Voltage 75 --- --- V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- 0.074 --- V/C Reference to 25C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance --- 17.6 22 m VGS = 10V, ID = 30A VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V VDS = VGS, ID = 50A gfs Forward Transconductance 36 --- --- S VDS = 25V, ID = 30A IDSS Drain-to-Source Leakage Current --- --- 20 A VDS = 75V, VGS = 0V --- --- 250 --- --- 200 nA VGS = 20V IGSS Gate-to-Source Forward Leakage V Conditions V(BR)DSS VGS = 0V, ID = 250A e VDS = 75V, VGS = 0V, TJ = 125C Gate-to-Source Reverse Leakage --- --- -200 Qg Total Gate Charge --- 34 51 VGS = -20V Qgs Gate-to-Source Charge --- 8.9 --- Qgd Gate-to-Drain ("Miller") Charge --- 14 --- VGS = 10V td(on) Turn-On Delay Time --- 14 --- VDD = 38V tr Rise Time --- 59 --- td(off) Turn-Off Delay Time --- 39 --- tf Fall Time --- 28 --- VGS = 10V LD Internal Drain Inductance --- 4.5 --- Between lead, LS Internal Source Inductance --- 7.5 --- Ciss Input Capacitance --- 1440 --- VGS = 0V Coss Output Capacitance --- 190 --- VDS = 25V Crss Reverse Transfer Capacitance --- 110 --- Coss Output Capacitance --- 720 --- VGS = 0V, VDS = 1.0V, = 1.0MHz Coss Output Capacitance --- 130 --- VGS = 0V, VDS = 60V, = 1.0MHz Coss eff. Effective Output Capacitance --- 230 --- VGS = 0V, VDS = 0V to 60V ID = 30A nC VDS = 60V e ID = 30A ns nH RG = 15 e 6mm (0.25in.) from package and center of die contact pF = 1.0MHz f Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current --- --- 45 ISM (Body Diode) Pulsed Source Current --- --- 180 VSD (Body Diode) Diode Forward Voltage --- --- 1.3 V p-n junction diode. TJ = 25C, IS = 30A, VGS = 0V trr Reverse Recovery Time --- 30 45 ns TJ = 25C, IF = 30A, VDD = 38V Qrr Reverse Recovery Charge --- 28 42 nC di/dt = 100A/s ton Forward Turn-On Time 2 c MOSFET symbol A showing the integral reverse e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFR/U2607ZPbF 1000 1000 100 BOTTOM TOP 10 1 4.5V 60s PULSE WIDTH Tj = 25C ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 BOTTOM 4.5V 10 60s PULSE WIDTH Tj = 175C 0.1 1 0.1 1 10 100 0.1 VDS , Drain-to-Source Voltage (V) 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.0 60 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current() VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100.0 TJ = 175C 10.0 TJ = 25C 1.0 VDS = 20V 60s PULSE WIDTH TJ = 25C 50 40 TJ = 175C 30 20 10 VDS = 10V 380s PULSE WIDTH 0.1 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10.0 0 0 10 20 30 40 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance Vs. Drain Current 3 IRFR/U2607ZPbF 2400 20 2000 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance (pF) Coss = Cds + Cgd 1600 Ciss 1200 800 400 Coss Crss VDS = 60V 16 VDS= 30V VDS= 12V 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 ID= 30A 10 0 100 1000.0 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 30 40 50 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100.0 TJ = 175C 10.0 TJ = 25C OPERATION IN THIS AREA LIMITED BY R DS (on) 100 100sec 10 1 10msec Tc = 25C Tj = 175C Single Pulse VGS = 0V 1msec DC 0.1 0.1 0.0 0.4 0.8 1.2 1.6 2.0 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 1.0 10 2.4 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFR/U2607ZPbF 50 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 LIMITED BY PACKAGE ID , Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 ID = 30A VGS = 10V 2.0 1.5 1.0 0.5 175 -60 -40 -20 TC , Case Temperature (C) 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 10. Normalized On-Resistance Vs. Temperature Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 J 0.05 0.02 0.01 R1 R1 J 1 R2 R2 2 1 C 2 Ri (C/W) i (sec) 0.71826 0.000423 0.66173 0.004503 Ci= i/Ri Ci i/Ri 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR/U2607ZPbF D.U.T RG VGS 20V DRIVER L VDS + V - DD IAS tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS, Single Pulse Avalanche Energy (mJ) 400 15V ID 3.5A 4.8A BOTTOM 30A TOP 300 200 100 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGS QGD 5.0 VGS(th) Gate threshold Voltage (V) 10 V VG Charge Fig 13a. Basic Gate Charge Waveform L DUT 0 1K ID = 1.0A ID = 1.0mA 4.5 ID = 250A ID = 50A 4.0 3.5 3.0 2.5 VCC 2.0 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( C ) Fig 13b. Gate Charge Test Circuit 6 Fig 14. Threshold Voltage Vs. Temperature www.irf.com IRFR/U2607ZPbF 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 100 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 30A 80 60 40 20 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (C) Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 7 IRFR/U2607ZPbF D.U.T Driver Gate Drive + * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - - D= Period P.W. + VDD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs VDS VGS RG RD D.U.T. + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRFR/U2607ZPbF D-Pak (TO-252AA) Package Outline D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN THE AS S EMBLY LINE "A" PART NUMBER INT ERNATIONAL RECT IFIER LOGO Note: "P" in ass embly line position indicates "Lead-Free" IRFU120 12 916A 34 AS S EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A OR INT ERNATIONAL RECT IFIER LOGO PART NUMBER IRFU120 12 AS S EMBLY LOT CODE www.irf.com 34 DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = AS S EMBLY S IT E CODE 9 IRFR/U2607ZPbF I-Pak (TO-251AA) Package Outline I-Pak (TO-251AA) Part Marking Information E XAMPL E : T HIS IS AN IR F U 120 WIT H AS S E MB L Y L OT CODE 5678 AS S E MB L E D ON WW 19, 1999 IN T H E AS S E MB L Y L INE "A" INT E R NAT IONAL R E CT IF IE R L OGO PAR T NU MB E R IR F U 120 919A 56 78 AS S E MB L Y L OT CODE Note: "P" in as s embly line pos ition indicates "L ead-F ree" DAT E CODE YE AR 9 = 1999 WE E K 19 L INE A OR INT E R NAT IONAL R E CT IF IE R L OGO PAR T NU MB E R IRF U120 56 AS S E MB L Y L OT CODE 10 78 DAT E CODE P = DE S IGNAT E S L E AD-F R E E PR ODU CT (OPT IONAL ) YE AR 9 = 1999 WE E K 19 A = AS S E MB L Y S IT E CODE www.irf.com IRFR/U2607ZPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes: Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L = 0.21mH Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive RG = 25, IAS = 30A, VGS =10V. Part not avalanche performance. recommended for use above this value. This value determined from sample failure population. 100% Pulse width 1.0ms; duty cycle 2%. tested to this value in production. When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at TJ approximately 90C Repetitive rating; pulse width limited by Data and specifications subject to change without notice. This product has been designed for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/04 www.irf.com 11 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/