MCC
BCW66H
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Min. TYP. Max. Unit
DC Current Gain(1)
at VCE = 10V, IC= 100µAh
FE 80–––
at VCE = 1V, IC= 10mA hFE 18 0–––
at VCE = 1V, IC= 100mA hFE 250 630 –
at VCE = 2V, IC= 500mA hFE
Collector-Emitter Saturation Voltage(1)
at IC= 100mA, IB= 10mA VCEsat – – 0.3 V
at IC= 500mA, IB= 50mA VCEsat – – 0.7 V
Base-Emitter Saturation Voltage(1)
at IC= 100mA, IB= 10mA VBEsat – – 1.25 V
at IC= 500mA, IB= 50mA VBEsat ––2V
Collector-Emitter Breakdown Voltage
at IC= 10mA, IB= 0 V(BR)CEO 45 – – V
Collector-Base Breakdown Voltage
at IC= 10µA, IB= 0 V(BR)CBO 75 – – V
Emitter-Base Breakdown Voltage
at IE= 10µA, IC= 0 V(BR)EBO 5––V
Collector-Base Cut-off Current
at VCB = 45V, IE= 0 ICBO – – 20 nA
at VCB = 45V, IE= 0, TA= 150°C ICBO ––20µA
Emitter-Base Cut-off Current
at VEB = 4V, IC= 0 IEBO – – 20 nA
Gain-Bandwidth Product
at VCE = 10V, IC= 20mA, f = 100MHz fT– 100 – MHZ
Collector-Base Capacitance
at VCB = 1 0V, f = 1MHz CCB –6–pF
Emitter-Base Capacitance
at VEB = 0.5V, f = 1MHz CEB –60–pF
Note: (1) Pulse test: t ≤300µs, D = 2%
100
Revision: B 2013/01/01
TM
Micro Commercial Components
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