DHG 60 I 1200 HA
preliminary
ns
Sonic Fast Recovery Diode
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
500
IA
V
F
2.32
R0.35 K/W
V
R
=
13
min.
60
t = 10 ms
Applications:
V
RRM
V1200
100T
VJ
V°C=
T
VJ
°C=mA1.2
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
=95°C
d =
P
tot
360 WT
C
°C=
T
VJ
150 °C-55
V
I
RRM
=
=1200
60
60
T
VJ
=45°C
DHG 60 I 1200 HA
V
A
1200
V1200
25
25
25
max. repe titiv e re verse vo l t a g e
reverse current
forward voltage
virt ua l j un ctio n temp e r ature
total power dissipation
max. forward surge current
Conditions Unit
3.06
T
VJ
°C=25
C
J
j
unction capacitance V = V; T
125
V
F0
V1.25T
VJ
=150°C
r
F
15
f = 1 MHz = °C25
mΩ
V2.34T
VJ
=°C
I
F
=A
V
60
3.37
I
F
=A120
I
F
=A120
threshold voltage
slope resistance for power loss calculation only
Backside: cathode
45 A
T
VJ
=°C
reverse recovery time
A60
200
350
ns
(50 Hz), sine
t
rr
=200 ns
● Housing:
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
TO-247
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
RVJ
I
RM
max. reverse recovery current
I
F
=A;60
25
T=125°C
VJ
-di
F
=A/µs1200/dtt
rr
V
R
=V600
T
VJ
=°C25
T=125°C
VJ
µA
27600 pF
thermal resistance junction to case
thJC
rectangular 0.5
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutatin
g
switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
FAV
average forward current
FAV
125
IXYS reserves the right to change limits, conditions and dimensions.
©
20110617a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
DHG 60 I 1200 HA
preliminary
I
RMS
A
per terminal 70
R
thCH
K/W0.25
M
D
Nm1.2
mounting torque 0.8
T
stg
°C150
storage temperature -55
Weight g6
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
F
C
N120
mount ing forc e with cl ip 20
Ordering Delivery Mode Quantity Code No.
Standard
Ordering Number
DHG 60 I 1200 HA 507752Tube 30
000000
YYWWZ
Logo
Marking on product
DateCode
Assembly Code
abcdef
Product Marking
Assembly Line
D
H
G
60
I
1200
HA
Part number
Diode
Sonic Fast Recovery Diode
extreme fast
Single Diode
TO-247AD (2)
=
=
=
DSEP60-12A
DSEP60-12AR
TO-247AD (2)
ISOPLUS247 (2)
Similar Part Package
Marking on Product
DHG60I1200HA
1200
1200
Voltage Class
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
IXYS reserves the right to change limits, conditions and dimensions.
©
20110617a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
DHG 60 I 1200 HA
preliminary
S
Ø
P
Ø
P1 D2
D1
E1
4
123
L
L1
2x
b2
2x
b
e
2x
E2
D
E
Q
A
A2
A1
C
Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.430 BSC 10.92 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
Ø P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
Ø P1 - 0.29 - 7.39
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions.
©
20110617a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
DHG 60 I 1200 HA
preliminary
600 700 800 900 1000 1100 1200 1300
2
4
6
8
10
12
14
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
20
40
60
80
100
120
Qrr
[µC]
IF
[A]
VF[V] diF/dt [A/µs]
TVJ = 125°C
TVJ = 25°C
T
VJ
= 125°C
V
R
= 600 V
30 A
60 A
120 A
Fig. 1 Typ. Forward current versus VFFig. 2 Typ. reverse recov.charge Qrr vs. di/dt
600 700 800 900 1000 1100 1200 1300
0
10
20
30
40
50
60
70
80
90
I
RM
[A]
di
F
/dt [A/µs]
T
VJ
= 125°C
V
R
=600 V
120 A
30 A
60 A
Fig. 3 Typ. peak reverse current IRM vs. di/dt
600 700 800 900 1000 1100 1200 1300
0
100
200
300
400
500
600
700
t
rr
[ns]
di
F
/dt [A/µs]
120 A
30 A
60 A
T
VJ
=125°C
V
R
= 600 V
Fig. 4 Typ. recovery time trr versus di/dt
Fig. 5 Typ. recovery energy Erec versus di/dt
600 700 800 900 1000 1100 1200 1300
0.0
0.8
1.6
2.4
3.2
4.0
E
rec
[mJ]
di
F
/dt [A/µs]
T
VJ
=125°C
V
R
= 600 V
120 A
30 A
60 A
0.001 0.01 0.1 1 10
0.01
0.1
1
Fig. 6 Typ. transient thermal impedance
R
i
τ
i
0.08 0.0005
0.06 0.004
0.075 0.02
0.135 0.15
Z
thJC
[K/W]
t
P
[s]
IXYS reserves the right to change limits, conditions and dimensions.
©
20110617a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
