Semiconductor Group 1 Dec-18-1996
BFS 17S
NPN Silicon RF Transistor
• For broadband amplifiers up to 1GHz
at collector currents from 1mA to 20mA
Tape loading orientation
Type Marking Ordering Code Pin Configuration Package
BFS 17S MCs Q62702-F1645 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363
Maximum Ratings of any single Transistor
Parameter Symbol Values Unit
Collector-emitter voltage
V
CEO 15 V
Collector-base voltage
V
CBO 25
Emitter-base voltage
V
EBO 2.5
Collector current
I
C 25 mA
Peak collector current
f
≥ 10 MHz
I
CM 50
Total power dissipation
T
S ≤ 83 °C
P
tot 280 mW
Junction temperature
T
j 150 °C
Ambient temperature
T
A- 65 + 150
Storage temperature
T
stg - 65 ... + 150
Thermal Resistance
Junction - soldering point 1)
R
thJS ≤ 240 K/W
1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm
Semiconductor Group 2 Dec-18-1996
BFS 17S
Electrical Characteristics at
T
A = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics of any single Transistor
Collector-emitter breakdown voltage
I
C = 1 mA,
I
B = 0
V
(BR)CEO 15 - - V
Collector-base cutoff current
V
CB = 10 V,
I
E = 0
V
CB = 25 V,
I
E = 0
I
CBO
-
--
- 10
0.05 µA
Emitter-base cutoff current
V
EB = 2.5 V,
I
C = 0
I
EBO - - 100
DC current gain
I
C = 2 mA,
V
CE = 1 V
I
C = 25 mA,
V
CE = 1 V
h
FE
20
20 70
--
150 -
Collector-emitter saturation voltage
I
C = 10 mA,
I
B = 1 mA
V
CEsat - 0.1 0.4 V
Semiconductor Group 3 Dec-18-1996
BFS 17S
Electrical Characteristics at
T
A = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics of any single Transistor
Transition frequency
I
C = 2 mA,
V
CE = 5 V,
f
= 200 MHz
I
C = 25 mA,
V
CE = 5 V,
f
= 200 MHz
f
T
1.3
1 2.5
1.4 -
-GHz
Collector-base capacitance
V
CB = 5 V,
f
= 1 MHz
C
cb - 0.55 0.8 pF
Collector-emitter capacitance
V
CE = 5 V,
f
= 1 MHz
C
ce - 0.13 -
Input capacitance
V
EB = 0.5 V,
I
C = 0 ,
f
= 1 MHz
C
ibo - 1.45 -
Output capacitance
V
CE = 5 V,
V
BE =
v
be = 0 ,
f
= 1 MHz
C
obs - - 1.5
Noise figure
I
C = 2 mA,
V
CE = 5 V,
f
= 800 MHz
Z
S = 0 Ω
F
- 3.5 5
dB
Transducer gain
I
C = 8 mA,
V
CE = 8 V,
Z
S =
Z
L= 50 Ω
f
= 900 MHz
f
= 1.75 GHz
|
S
21e|2
-
- 12
18 -
-
Linear output voltage
I
C = 14 mA,
V
CE = 5 V,
d
im = 60 dB
f
1 = 806 MHz,
f
2 = 810 MHz,
Z
S =
Z
L= 50 Ω
V
01=
V
02
- 100 -
mV
Third order intercept point
I
C = 200 mA,
V
CE = 8 V,
f
= 900 MHz
Z
S =
Z
L= 50 Ω
IP
3
- 23 -
dBm
Semiconductor Group 4 Dec-18-1996
BFS 17S
Total power dissipation
P
tot =
f
(
T
A*,
T
S)
* Package mounted on epoxy
0 20 40 60 80 100 120 °C 150
T
A
,T
S
0
50
100
150
200
mW
300
P
tot
T
S
T
A
Permissible Pulse Load
R
thJS =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
P
totmax/
P
totDC =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
0
10
1
10
2
10
3
10
-
P
totmax/
P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group 5 Dec-18-1996
BFS 17S
Collector-base capacitance
C
cb =
f
(
V
CB)
V
BE =
v
be = 0,
f
= 1MHz
04812 16 20 V 26
V
CB
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
pF
1.3
C
cb
Transition frequency
f
T =
f
(
I
C)
V
CE = Parameter
0 5 10 15 20 mA 30
I
C
0.0
0.5
1.0
1.5
2.0
GHz
3.0
fT
10V
5V
3V
2V
1V
0.7V
