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MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0
September 2014
MPSA06 / MMBTA06 / PZTA06
NPN General-Purpose Amplifier
Features
• This device is designed for general-purpose amplifier
applications at collector currents to 300 mA.
• Sourced from process 12.
Ordering Information
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applic ations involving pulsed or
low-duty-cycle operations.
Part Number Top Mark Package Packing Method
MPSA06 MPSA06 TO-92 3L Bulk
MMBTA06 1G SOT-23 3L Tape and Reel
PZTA06 A06 SOT-223 4L Tape and Reel
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 80 V
VCBO Collector- Base Voltage 80 V
VEBO Emitter-Base Voltage 4.0 V
ICCollector Current - Continuous 500 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
SOT-23
B
E
C
Mark: 1G
TO-92
B C E
SOT-223
C
MPSA06 MMBTA06 PZTA06
E B C
MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 2
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Notes:
3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mounting pad for the collector lead minimum 6 cm2.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Notes:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.
Symbol Parameter Max. Unit
MPSA06 MMBTA06(3) PZTA06(4)
PDTotal Devic e Dissipation 625 350 1000 mW
Derate Above 2 5°C 5.0 2.8 8.0 mW/°C
RθJC Thermal Resistance, Junction-to-Case 83.3 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 200 357 125 °C/W
Symbol Parameter Conditions Min. Max. Unit
Off Characteristics
V(BR)CEO Collector-Emitter Breakdo w n Voltage(5) IC = 1.0 mA, IB = 0 80 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 4.0 V
ICEO Collector Cut-Off Current VCE = 60 V, IB = 0 0.1 μA
ICBO Collector Cut-Off Current VCB = 80 V, IE = 0 0.1 μA
On Characteristics
hFE DC Current Gain IC = 10 mA, VCE = 1.0 V 100
IC = 100 mA, VCE = 1.0 V 100
VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA 0.25 V
VBE(on) Base-Emitter On Voltage IC = 100 mA, VCE = 1.0 V 1.2 V
Small Signal Characteristics
fTCurrent Gain - Bandwidth Product IC = 10 mA, VCE = 2.0 V,
f = 100 MHz 100 MHz
MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain vs.
Collector Current Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage vs.
Collector Current Figure 4. Base-Emitter On Voltage vs.
Collector Current
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature Figure 6. Collector Saturation Regio n
0.001 0.01 0.1
50
100
150
200
I - CO LL EC TOR CU RR ENT (A)
h - TYP ICAL PULSED CURRE NT GAIN
FE
- 40 °C
25 °C
C
V = 1V
CE
125 °C
0. 1 1 1 0 10 0 1 00 0
0
0. 1
0. 2
0. 3
0. 4
0. 5
I - COLLECTOR CURRENT (mA)
V - COLLEC TOR EM ITTE R VOLTA GE (V)
C
CESAT
β= 10
- 40 °C
25 °C
125 °C
ββ
0. 1 1 1 0 10 0 1 00 0
0. 4
0. 6
0. 8
1
I - COLLECTOR CURRE NT (mA)
V - BASE EM ITTE R VOLTAGE (V)
C
BESAT
β= 10
- 40 °C
25 °C
125 °C
ββ
1 10 100 1000
0
0. 2
0. 4
0. 6
0. 8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BEON
V = 5V
CE
- 40 °C
25 °C
125 °C
ββ
25 50 75 100 125
0.001
0.01
0. 1
1
10
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
CBO
°
V = 80 V
CB
0.01 0.1 1 10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IC=500mA
IC=250mA
IC=100mA
IC=50mA
IC=10mA
VCE(SAT), Collector Emitter Voltage (V)
IB - Base Current (mA)
MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 4
Typical Performance Characteristics (Continued)
Figure 7. Collector-Emitter Breakd own V olt age
with Resistance Between Emitter-Base Figure 8. Input and Output Capacitance vs.
Reverse Current
Figure 9. Gain Bandwidth Product vs.
Collector Current Figure 10. Power Dissipation vs.
Ambient Temperature
ββ
0.1 1 10 100 1000
111
112
113
114
115
116
117
RESISTANCE (k )
BV - BREAKDOWN VOLTAGE (V)
Ω
CER
ββ
0.1 1 10 100
0.1
1
10
100
V - COLLECTOR VOLTAGE (V)
CAPACITANCE (pF)
C
f = 1.0 MHz
CE
C
ob
ib
ββ
1102050100
100
150
200
250
300
350
400
I - COLLECTOR CURRENT (mA)
f - GAIN BANDWIDTH PRODUCT (MHz)
C
T
V = 5V
CE
ββ
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P - POWER DISSIPATION (W)
D
o
SOT-223
TO-92
SOT-23
MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 5
Physical Dimensions
Figure 11. 3-LEAD, TO-92, MOLDED, STD STRAIGHT LEAD (NO EOL CODE)
D
MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 6
Physical Dimensions (Continued)
Figure 12. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
LAND PATTERN
RECOMMENDATION
NOTES: UNLESS OTHERWISE SPECIFIED
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
3
12
SEE DETAIL A
SEATING
PLANE
SCALE: 2X
GAGE PLANE
(0.55)
(0.93)
1.20 MAX
C
0.10
0.00
0.10 C
2.40±0.30
2.92±0.20
1.30+0.20
-0.15
0.60
0.37
0.20 A B
1.90
0.95
(0.29)
0.95
1.40
2.20
1.00
1.90
0.25
0.23
0.08
0.20 MIN
MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 7
Physical Dimensions (Continued)
Figure 13. MOLDED PACKAGING, SOT-223, 4-LEAD
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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