TSM2N7000 1-3 2003/12 rev. A
TSM2N7000
60V N-Channel Enhancement Mode MOSFET
VDS = 60V
ID = 200mA
RDS (on), Vgs @ 10V, Ids @ 500mA = 5.0Ω
General Description
The TSM2N7000 is produced using high cell density, DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most
applications requiring up to 200mA DC and can deliver pulsed currents up to 500mA. This product is particularly suited
for low voltage, low current application such as small servo motor control, power MOSFET gate drivers, and other
switching applications.
Ordering Information
Part No. Packing Package
TSM2N7000CT A3 Ammo pack
TSM2N7000CT B0 Bulk pack
TO-92
Features
High density cell design for low on-resistance
Voltage control small signal switch
Rugged and reliable
High saturation current capability
Provide in TO-92 package
Block Diagram
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60 V
Drain-Gate Voltage VDGR 60 V
Gate-Source Voltage --- Continuous
--- Pulsed
VGS
VGSM
± 20
± 40
V
Continuous Drain Current ID 200 mA
Pulsed Drain Current IDM 500 mA
Ta = 25 oC 350 mW Maximum Power Dissipation
Ta > 25 oC
PD
2.8 mW/ oC
Operating Junction Temperature TJ +150
oC
Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 oC
Thermal Performance
Parameter Symbol Limit Unit
Lead Temperature (1/8” from case) TL 10 S
Junction to Ambient Thermal Resistance Rθja 357
oC/W
Pin assignment:
1. Gate
2. Source
3. Drain
TSM2N7000 2-3 2003/12 rev. A
Electrical Characteristics
Tj = 25 oC unless otherwise noted
Parameter Conditions Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage VGS = 0V, ID = 10uA BVDSS 60 -- -- V
VGS = 10V, ID = 500mA RDS(ON) -- -- 5.0 Drain-Source On-State Resistance *
VGS = 5V, ID = 50mA RDS(ON) -- 7.5 --
Ω
Drain-Source On-Voltage * VGS = 0V, ID = 10uA VDS(ON) -- -- 2.5 V
Gate Threshold Voltage * VDS = VGS, ID = 1.0mA VGS(TH) 0.8 -- 3.0 V
Zero Gate Voltage Drain Current VDS = 48V, VGS = 0V IDSS -- -- 1.0 uA
Gate Body Leakage - Forward VGS = 15V, VDS = 0V IGSS -- -- - 10 nA
On-State Drain Current VDS 5V, VGS = 10V ID(ON) 60 -- -- mA
Dynamic
Turn-On Rise Time * tr -- 10 --
Turn-Off Fall Time *
VDD = 15V, RL = 30Ω,
ID = 500mA,
VGEN = 10V, RG = 25Ω tf -- 10 --
nS
Input Capacitance Ciss -- 60 --
Output Capacitance Coss -- 25 --
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Crss -- 5 --
pF
Source-Drain Diode
Max. Diode Forward Current IS -- -- 500 mA
Diode Forward Voltage IS = 200mA, VGS = 0V VSD -- 1.3 1.5 V
* Note : pulse test: pulse width <=300uS, duty cycle <=2%
TSM2N7000 3-3 2003/12 rev. A
TO-92 Mechanical Drawing
C
D
A
B
H
E F
G
TO-92 DIMENSION
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 4.30 4.70 0.169 0.185
B 4.30 4.70 0.169 0.185
C 14.30(typ) 0.563(typ)
D 0.43 0.49 0.017 0.019
E 2.19 2.81 0.086 0.111
F 3.30 3.70 0.130 0.146
G 2.42 2.66 0.095 0.105
H 0.37 0.43 0.015 0.017
