Xoo]5! 2N5007 AND 2N5009 SSDI 10 AMP HIGH SPEED PNP TRANSISTOR | ciinciecicnesoos 100 VOLTS (213) 921-9660 TWX 910-583-4807 FAX 213-921-2396 CASE STYLE T JEDEC TO61 ALL TERMINALS ISOLATED FROM CASE FEATURES seve waz se r ian 7 ; e@ RADIATION TOLERANT Vee une. om ga e FAST SWITCHING, 100 NSEC MAX td pic = gle U Ss /@ HIGH FREQUENCY, TYPICAL fy, 100 MHZ ae veh He A ae BVCEO 80 VOLTS MIN om ae N d, 2b @ HIGH LINEAR GAIN, LOW SATURATION VOLTAGE 0207 us oO | =~ Js2 @ 200C OPERATING, GOLD EUTECTIC DIE ATTACH win A wae et es DESIGNED FOR COMPLEMENTARY USE WITH we om 2N5006 AND 2N5008 MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage Voce Volts 80 Collector - Base Voltage Vego 100 Volts Emitter - Base Voltage Veg 5.5 Volts Collector Current Ic 10 Amps Base Current \p 3 Amps Total Device Dissipation @ TC = 50 C Pp 100 Watts Derate above 5 C 667 mw/C Operating and Storage Temperature Tj, Tstg ~65 to +200 C THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Thermal Resistance, Junction to Case REJC 1.5 c ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit Collector - Emitter Breakdown Voltage* (le= = 200 = made) BVceo- 80 Vde Collector - Base Breakdown Voltage Vde (e= 200 wu Adc) BVcg0 100 Emitter - Base Breakdown Voltage (TR= 200 uAdc) BVEBO 5.5 Vde 47385 -B348P NOTE: All specifications subject to change without notice.ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit Collector Cutoff Current ICEO 50 uAdc (VCE = 40 Vdc) I 1.0 Ad (VCE = 60 Vdc) CES . uAdC Collector Cutoff Current (VCE = 100Vdc). rCEX 1.0 mAdc (VCE = 60 Vdc, VBE = 2 Vde, TC = 150C) CEX 500 uAdc Emitter Cutoff Current (VEB = 4 Vdc) leBO .O uAdc = 5.5 Vdc) 1.0 mAdc DC Current Gain" 2N5007 20 = l = 2N5009 50 (Ic QO mAdc VcE 5 Vdc) 2N5007 hee. 30 90 (ip = 9 Adc. Vop = 5 Vdc) 2N5009 70 200 _ _ 2N5007 20 (lc = 10 Adc, Ver = 5 Vdc) 2N5009 45 Collector - Emitter Saturation Voltage* (Ig = 5 Ade, ig = 500 mAdc) Vog. (sani 0.9 Vdc (Ig = 10 Adc. ig = 500 made) 1.5 Base - Emitter Saturation Voltage (Ip = 5 Adc. lg = 500 = maAdc) Vee (SAT) 1. Vdc (ig= 10 Adcig= 1 Adc) 2.2 Current - Gain - Bandwith Product 2N5007 ty 35 M Hz (ic = 500 mAdc, Vog = 5 Vdce.f = 20 MHz) gN5009 40 Output Capacitance ' (Vop= 10 Voc lp =0.f= 1. MH) Cop 500 P Base - Emitter Voltage* (Vcop = 5 Vde, IC = 5 Adc) VpE (ON) * 1.8 Vde Delay Time (Voc = 40 Vdc. ty 100 ns Rise Time Vpp(Off) = 3.0 Vdc, ty 100 ns Storage Time Ic = 2 Adc, te. 2.0 us Falt Time ig} = po = 200 MAdc) 7 200 ns *Pulse Test: Pulse width = 300 us, DutyCycle = 2% TYPICAL OPERATING CURVES DISSIPATION DERATING CURVE SSDI. 100 ~ wa N wa \ \ P Maximum Total Device Dissipation W w o x 75 100 125 150 tk Cose Temperoture"C SOLID STATE DEVICES, INC. 175 200 i~Maximum Collector Current-A 100 70 40 20 FORWARD BIAS DC SAFE OPERATION AREA (S.0.A. CURVE) o CURVES APPLY BELOW RATED Yogo Ty = 25C 4 7 610 20 D-C Operation 40 76 100 Vee Collector-Emitter VoltageV P.O. Box 577, La Mirada, California 90637 Telephone: (213) 921-9660 * TWX 910-583-4807 + FAX#213-921-2396