DSEI2x101-12A
2
3
1
4
Low Loss and Soft Recovery
Fast Recovery Epitaxial Diode
Parallel legs
FRED
Part number
DSEI2x101-12A
Backside: isolated
FAV
rr
t ns40
RRM
91
1200
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
● Planar passivated chips
● Low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
SOT-227B (minibloc)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Isolation Voltage: V~
3000
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms and Conditions of Usage
IXYS reserves the right to change limits, conditions and dimensions. 20130703aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSEI2x101-12A
ns
38 A
T
VJ
= °C
reverse recovery time
A52
150
255
ns
I
RM
max. reverse recovery current
I
F
= A;100
25
T = 100 °C
VJ
-di
F
= A/µs600/dt
t
rr
V
R
= V600
T
VJ
= °C25
T = 100 °C
VJ
V = V
Symbol
Definition
Ratings
typ.
max.
I
R
IA
V
F
1.87
R0.5 K/W
R
min.
91
V
RSM
3T = 25°C
VJ
T = °C
VJ
mA15V = V
R
T = 25°C
VJ
I = A
F
T = °C
C
50
P
tot
250 WT = 25°C
C
RK/W
100
960
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions
Unit
2.13
T = 25°C
VJ
125
V
F0
1.01T = °C
VJ
150
r
F
6.1
mΩ
1.61T = °C
VJ
I = A
F
100
1.92
I = A
F
200
I = A
F
200
threshold voltage
slope resistance for power loss calculation only
mA
150
V
RRM
1200
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
107
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current
V = 0 V
R
T = °C
VJ
150
900 A
1200
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
1200
0.10
IXYS reserves the right to change limits, conditions and dimensions. 20130703aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSEI2x101-12A
Ratings
abcdZyyww
XXXXX
Product Marking
Logo
Part No.
DateCode
Assembly Code
Assembly Line
®
Package
T
op
°C
M
D
Nm1.5
mounting torque
1.1
T
VJ
°C150
virtual junction temperature
-40
Weight g30
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
M
T
Nm1.5
terminal torque
1.1
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
10.5 3.2
8.6 6.8
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
150 A
per terminal
125-40
terminal to terminal
SOT-227B (minibloc)
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
DSEI2x101-12A 468002Tube 10DSEI2x101-12AStandard
3000
ISOL
T
stg
°C150
storage temperature
-40
2500
threshold voltage
V1.01
mΩ
V
0 max
R
0 max
slope resistance *
4.9
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Fast
Diode
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130703aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSEI2x101-12A
2
3
1
4
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions. 20130703aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSEI2x101-12A
200 600 10000 400 800
200
250
300
350
400
450
500
0.001 0.01 0.1 1 10
0.1
1
0 40 80 120 160
0.4
0.6
0.8
1.0
1.2
1.4
0 200 400 600 800 1000
10
30
50
0
20
40
60
0.0
0.5
1.0
1.5
200 600 10000 400 800
20
60
100
1
4
0
0
40
80
120
0001001
0
2
4
6
8
10
12
14
16
0.0 0.5 1.0 1.5 2.0
0
25
50
75
100
125
1
50
0.1
0.2
0.3
0.05
t [s]
I
F
[A]
-di
F
/dt [A/µs]
V
F
[V]
Q
r
[µC]
-di
F
/dt [A/µs]
I
RM
[A]
-di
F
id-]sµ/A[td/
F
/dt [A/µs]
V
FR
[V]
t
rr
[ns]
t
fr
[µs]
V
FR
T
VJ
[°C]
K
f
Z
thJC
[K/W]
I
RM
Q
rr
Fig. 1 Forward current
I
F
versus V
F
Fig. 2 Typ. reverse recov. charge
Q
rr
versus -di
F
/dt
Fig. 3 Typ. peak reverse current
I
rr
versus -di
F
/dt
Fig. 4 Dyn. parameters
Q
r
, I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
F
ig
.
7
T
r
an
s
i
en
t t
he
r
m
al
i
m
pedan
c
e
j
un
c
t
ion
t
o
c
a
s
e
Constants for ZthJC calculation:
i Rthi ti
[K/W] [s]
1 0.020 0.00002
2 0.050 0.00081
3 0.076 0.01000
4 0.240 0.09400
5 0.114 0.45000
T
VJ
= 150°C
25°C
I
F
= 200 A
100 A
50 A
I
F
= 200 A
100 A
50 A
I
F
= 200 A
100 A
50 A
t
fr
T
VJ
= 100°C
V
R
= 600 V
T
VJ
= 100°C
V
R
= 600 V
T
VJ
= 100°C
V
R
= 600 V
T
VJ
= 100°C
V
R
= 600 V
100°C
D=0.7
0.5
0.05
Single Pulse
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions. 20130703aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved