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BSS123W — N-Channel Logic Level Enhancement Mode Field Effect Transistor
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS123W Rev. 1.0
December 2015
BSS123W
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
Features
• 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V
RDS(ON) = 10 Ω at VGS = 4.5 V
• High Density Cell Design for Low RDS(ON)
• Rugged and Reliable
• Ultra Small Surface Mount Package
• Very Low Capacitance
• Fast Switching Speed
• Lead Free / RoHS Compliant
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Marking Package Packing Method
BSS123W SA SOT-323 3L Tape and Reel
Symbol Parameter Value Unit
VDSS Drain-Source Voltage 100 V
VDGR Drain-Gate Voltage RGS ≤ 20 kΩ100 V
VGSS Gate-Source Voltage ±20 V
IDDrain Current Continuous 0.17 A
Pulsed 0.68
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
D
SG
G
S
SOT-323
D
Description
This N-channel enhancement mode field effect transistor
is produced using high cell density, trench MOSFET
technology. This product minimizes on-state resistance
while providing rugged, reliable and fast switching perfor-
mance. This product is particularly suited for low-voltage,
low-current applications such as small servo motor con-
trol, power MOSFET gate drivers, logic level transistor,
high speed line drivers, power management/power sup-
ply and switching applications.
BSS123W — N-Channel Logic Level Enhancement Mode Field Effect Transistor
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS123W Rev. 1.0 2
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
2. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Symbol Parameter Value Unit
PD
Total Power Dissipation 200 mW
Derate Above 25°C1.6mW/°C
RθJA Thermal Resistance, Junction-to-Ambient(1) 625 °C/W
Symbol Parameter Conditions Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 100 V
IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V 1 μA
VDS = 20 V, VGS = 0 V 10 nA
IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 50 nA
IGSSR Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V -50 nA
On Characteristics(2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 0.8 1.7 2.0 V
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.17 A 1.39 6 Ω
VGS = 4.5 V, ID = 0.17 A 1.48 10
gFS Forward Transconductance VDS = 10 V, ID = 0.17 A 80 mS
VSD
Drain-Source Diode Forward
Voltage VGS = 0 V, IS = 0.34 A 0.81 1.30 V
Dynamic Characteristics
Ciss Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
71 pF
Coss Output Capacitance 6.6 pF
Crss Reverse Transfer Capacitance 2.74 pF
Switching Characteristics(2)
trTurn-On Rise Time
VDD = 30 V, ID = 0.28 A,
VGS = 10 V, RGEN = 6 Ω
1.24 8 ns
tfTurn-Off Fall Time 5.73 16 ns
td(on) Turn-On Delay 2.94 8 ns
td(off) Turn-Off Delay 8.4 13 ns
BSS123W — N-Channel Logic Level Enhancement Mode Field Effect Transistor
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS123W Rev. 1.0 3
Typical Performance Characteristics
Figure 1. On-Region Charac teristics Figure 2. On -Resistance Variation with Drain Current
and Gate Voltage
Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-to-
Source Voltage
Figure 5. Transfer Characteristics Figure 6. Body Diod e Forward Voltage Variati on with
Source Current and Temperature
0
0.2
0.4
0.6
0.8
1
012345
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
VGS = 10V
2.0V
3.0V
2.5V
6.0V
4.5V
3.5V
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
0 0.2 0.4 0.6 0.8 1
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANC
E
VGS = 2.5V
4.5V
3.0V
3.5V 6.0V 10V
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = 170mA
VGS = 10V
1
1.4
1.8
2.2
2.6
3
3.4
0246810
VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON), ON-RESISTANCE (OHM)
ID = 0.08A
TA = 125oC
TA = 25oC
0
0.2
0.4
0.6
0.8
1
1 1.5 2 2.5 3
VGS, GATE TO SOURCE VOLTAGE (V)
ID
, DRAIN CURRENT (A
)
TA = 125oC
25oC
-55oC
VDS = 10V
0.0001
0.001
0.01
0.1
1
0 0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
TA = 125oC
25oC
-55oC
BSS123W — N-Channel Logic Level Enhancement Mode Field Effect Transistor
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS123W Rev. 1.0 4
Typical Performance Characteristics (Continued)
Figure 7. Gate Charge Characteristics Figure 8. Capacitance
0
2
4
6
8
10
0 0.4 0.8 1.2 1.6 2
Qg, GATE CHARGE (nC)
VGS, GATE-SOURCE VOLTAGE (V)
ID = 0.17A VDS = 30V
50V
70V
0.1 1 10 100
1
10
100
Crss
Coss
Ciss
CAPACITANCE (pF)
VDS - DRAIN TO SOURCE VOLTAGE (V)
f = 1 MHz
VGS = 0 V
BSS123W — N-Channel Logic Level Enhancement Mode Field Effect Transistor
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS123W Rev. 1.0 5
Physical Dimensions
Figure 9. 3-LEAD, SC70, EIAJ SC-70, 1.25MM WIDE
®
®
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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