Vishay Siliconix
SUP28N15-52
Document Number: 71939
S09-1501-Rev. B, 10-Aug-09
www.vishay.com
1
N-Channel 150-V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)I
D (A)
150 0.052 at VGS = 10 V 28
0.060 at VGS = 6 V 26
TO-220AB
Top View
GDS
Ordering Information: SUP28N15-52 E3 (Lead (Pb)-free)
DRAIN connected to TAB
D
G
S
N-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 150 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 175 °C)bTC = 25 °C ID
28
A
TC = 125 °C 16
Pulsed Drain Current IDM 50
Continuous Source Current (Diode Conduction) IS28
Avalanche Current IAR 25
Repetitive Avalanche Energy (Duty Cycle ≤ 1 %) L = 0.1 mH EAR 31 mJ
Maximum Power Dissipation
TC = 25 °C
PD
120b
W
TA = 25 °C
(mounted)a3.75a
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Unit
Junction-to-AmbientaPCB Mounta
RthJA
40
°C/W
Free Air 62.5
Junction-to-Case (Drain) RthJC 1.25
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Document Number: 71939
S09-1501-Rev. B, 10-Aug-09
Vishay Siliconix
SUP28N15-52
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ.a Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 150 V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 24.5
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 120 V, VGS = 0 V 1
µA
VDS = 120 V, VGS = 0 V, TJ = 125 °C 50
VDS = 120 V, VGS = 0 V, TJ = 175 °C 250
On-State Drain CurrentbID(on) V
DS = 5 V, VGS = 10 V 50 A
Drain-Source On-State ResistancebRDS(on)
VGS = 10 V, ID = 5 A 0.042 0.052
Ω
VGS = 10 V, ID = 5 A, TJ = 125 °C 0.109
VGS = 10 V, ID = 5 A, TJ = 175 °C 0.145
VGS = 6 V, ID = 5 A 0.047 0.060
Forward Transconductancebgfs VDS = 15 V, ID = 25 A 40 S
Dynamica
Input Capacitance Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz
1725
pFOutput Capacitance Coss 216
Reverse Transfer Capacitance Crss 100
Total Gate ChargecQg
VDS = 75 V, VGS = 10 V, ID = 28 A
33 40
nC
Gate-Source ChargecQgs 9
Gate-Drain ChargecQgd 12
Tur n - O n D e l ay Timectd(on)
VDD = 50 V, RL = 3 Ω
ID ≅ 28 A, VGEN = 10 V, Rg = 2.5 Ω
15 25
ns
Rise Timectr70 100
Turn-Off Delay Timectd(off) 25 40
Fall Timectf60 90
Source-Drain Diode Ratings and Characteristics TC = 25 °C
Pulsed Current ISM 50 A
Diode Forward VoltagebVSD IF = 25 A, VGS = 0 V 0.9 1.5 V
Source-Drain Reverse Recovery Time trr IF = 28 A, dI/dt = 100 A/µs 95 140 ns
Document Number: 71939
S09-1501-Rev. B, 10-Aug-09
www.vishay.com
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Vishay Siliconix
SUP28N15-52
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
Transconductance
Capacitance
0
10
20
30
40
50
0246810
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
6 V
VGS = 10 V thru 7 V
4 V
5 V
0
10
20
30
40
50
60
0 1020304050
gfs - Transconductance (S)
TC = - 55 °C
25 °C
125 °C
ID - Drain Current (A)
0
500
1000
1500
2000
2500
0 30 60 90 120 150
VDS - Drain-to-Source Voltage (V)
C- Capacitance (pF)
Coss
Ciss
Crss
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
01234567
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
- 55 °C
TC = 125 °C
25 °C
0.00
0.02
0.04
0.06
0.08
0.10
0 1020304050
- On-Resistance (Ω)
ID - Drain Current (A)
RDS(on)
VGS = 10 V
VGS = 6 V
0
4
8
12
16
20
0 102030405060
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 75 V
I
D
= 25 A
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Document Number: 71939
S09-1501-Rev. B, 10-Aug-09
Vishay Siliconix
SUP28N15-52
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71939.
On-Resistance vs. Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
- 50 - 25 0 25 50 75 100 125 150 175
(Normalized)
- On-Resistance
TJ - Junction Temperature (°C)
RDS(on)
VGS = 10 V
ID = 5 A
Source-Drain Diode Forward Voltage
VSD - Source-to-Drain Voltage (V)
- Source Current (A)IS
100
10
10.3 0.6 0.9 1.2
TJ
= 25 °C
TJ
= 150 °C
0
Maximum Avalanche Drain Current
vs. Case Temperature
0
5
10
15
20
25
30
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
- Drain Current (A)ID
Safe Operating Area
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)ID
10
0.10.1 1 10 1000
1
100
TC = 25 °C
Single Pulse
10 ms
100 ms
DC
100 µs
10 µs
100
1 ms
Limited
by
RDS(on)*
* V
GS
minimum VGS at which RDS(on)
is
specified
>
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
2
1
0.1
0.01
10-4 10-3 10-2 10-1
0.2
0.1
Duty Cycle = 0.5
11030
Single Pulse
0.05
0.02
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Revision: 08-Feb-17 1Document Number: 91000
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