H11D1300 - Fairchild Semiconductor

Parameter Symbol Value Units

TOTAL DEVICE TSTG -55 to +150 °C

Storage Temperature

Operating Temperature TOPR -55 to +100 °C

Lead Solder Temperature TSOL 260 for 10 sec °C

Total Device Power Dissipation @ TA= 25°C PD260 mW

Derate above 25°C 3.5 mW/°C

EMITTER IF80 mA

*Forward DC Current

*Reverse Input Voltage VR6.0 V

*Forward Current - Peak (1µs pulse, 300pps) IF(pk) 3.0 A

*LED Power Dissipation @ TA= 25°C PD150 mW

Derate above 25°C 1.41 mW/°C

FEATURES

• High Voltage

- H11D1, H11D2, BVCER = 300 V

- H11D3, H11D4, BVCER = 200 V

• High isolation voltage

- 5300 VAC RMS - 1 minute

- 7500 VAC PEAK - 1 minute

• Underwriters Laboratory (UL) recognized File# E90700

DESCRIPTION

The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting

diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage

NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

8/9/00 200046A

EMITTER

COLLECTOR

ANODE

CATHODE

6BASE

N/C

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

H11D1

H11D2

H11D3

H11D4

4N38

APPLICATIONS

• Power supply regulators

• Digital logic inputs

• Microprocessor inputs

• Appliance sensor systems

• Industrial controls

ABSOLUTE MAXIMUM RATINGS

8/9/00 200046A

H11D1, H11D2, H11D3, H11D4, 4N38

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

Notes* Parameters meet or exceed JEDEC registered data (for 4N38 only)

** All typical values at TA= 25°C

ELECTRICAL CHARACTERISTICS (TA= 25°CUnless otherwise specified.)

Characteristic Test Conditions Symbol Device Min Typ** Max Unit

EMITTER (IF= 10 mA) VFALL 1.15 1.5 V

*Forward Voltage

Forward Voltage Temp. !VFALL -1.8 mV/°C

Coefficient !TA

Reverse Breakdown Voltage (IR= 10 µA) BVRALL 6 25 V

Junction Capacitance (VF= 0 V, f = 1 MHz) CJALL 50 pF

(VF= 1 V, f = 1 MHz) ALL 65 pF

*Reverse Leakage Current (VR= 6 V) IRALL 0.05 10 µA

DETECTOR (RBE = 1 M")BVCER H11D1/2 300

*Breakdown Voltage (IC= 1.0 mA, IF= 0) H11D3/4 200

Collector to Emitter (No RBE) (IC= 1.0 mA) BVCEO 4N38 80

H11D1/2 300 V

*Collector to Base (IC= 100 µA, IF= 0) BVCBO H11D3/4 200

4N38 80

Emitter to Base (IE= 100 µA , IF= 0) BVEBO 4N38 7

Emitter to Collector BVECO ALL 7 10

(VCE = 200 V, IF= 0, TA= 25°C) H11D1/2 100 nA

*Leakage Current (VCE = 200 V, IF= 0, TA= 100°C) ICER 250 µA

Collector to Emitter (VCE = 100 V, IF= 0, TA= 25°C) H11D3/4 100 nA

(RBE = 1 M")(V

CE = 100 V, IF= 0, TA= 100°C) 250 µA

(No RBE) (VCE = 60 V, IF= 0, TA= 25°C) ICEO 4N38 50 nA

INDIVIDUAL COMPONENT CHARACTERISTICS

Parameter Symbol Value Units

DETECTOR 300 mW

*Power Dissipation @ TA= 25°CP

Derate linearly above 25°C 4.0 mW/°C

H11D1 - H11D2 300

*Collector to Emitter Voltage H11D3 - H11D4 VCER 200

4N38 80

H11D1 - H11D2 300 V

*Collector Base Voltage H11D3 - H11D4 VCBO 200

4N38 80

*Emitter to Collector Voltage H11D1 - H11D2 VECO 7

H11D3 - H11D4

Collector Current (Continuous) 100 mA

ABSOLUTE MAXIMUM RATINGS (Cont.)

VCE - COLLECTOR VOLTAGE (V)

NORMALIZED ICER - OUTPUT CURRENT

Fig.2 Normalized Output Characteristics

0.1 1 10 100

0.01

0.1

Normalized to:

VCE = 10 V

IF = 10 mA

RBE = 106 Ω

TA = 25˚C

IF = 50 mA

IF = 5 mA

IF = 10 mA

IF - LED FORWARDCURRENT (mA)

VF - FORWARD VOLTAGE (V)

Fig.1 LED Forward Voltage vs. Forward Current

1 10 100

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

TA = 55˚C

TA = 25˚C

TA = 100˚C

8/9/00 200046A

H11D1, H11D2, H11D3, H11D4, 4N38

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

DC Characteristic Test Conditions Symbol Device Min Typ** Max Unit

EMITTER H11D1

Current Transfer Ratio (IF= 10 mA, VCE = 10 V) H11D2 2 (20)

Collector to Emitter (RBE = 1 M") CTR H11D3 mA (%)

H11D4 1 (10)

(IF= 10 mA, VCE = 10 V) 4N38 2 (20)

(IF= 10 mA, IC= 0.5 mA) H11D1/2/3/4 0.1 0.40

*Saturation Voltage (RBE = 1 M")V

CE (SAT) V

(IF= 20 mA, IC= 4 mA) 4N38 1.0

TRANSFER CHARACTERISTICS

Characteristic Test Conditions Symbol Device Min Typ** Max Unit

SWITCHING TIMES (VCE =10 V, ICE = 2 mA) ton ALL 5

Non-Saturated Turn-on Time µs

Turn-off Time (RL= 100 ") toff ALL 5

TRANSFER CHARACTERISTICS

Characteristic Test Conditions Symbol Device Min Typ** Max Unit

Isolation Voltage (II-O #$1 µA, 1 min.) VISO ALL 5300 (VACRMS)

7500 (VACPEAK)

Isolation Resistance (VI-O = 500 VDC) RISO ALL 1011 "

Isolation Capacitance (f = 1 MHz) CISO ALL 0.5 pF

ISOLATION CHARACTERISTICS

Notes* Parameters meet or exceed JEDEC registered data (for 4N38 only)

** All typical values at TA= 25°C

TA - AMBIENT TEMPERATURE (˚C)

NORMALIZED ICER - DARK CURRENT

Fig.3 Normalized Output Current vs. LED Input Current

IF - LED INPUT CURRENT (mA)

110

NORMALIZED ICER - OUTPUT CURRENT

0.01

0.1

Normalized to:

VCE = 10 V

IF = 10 mA

RBE = 106 Ω

TA = 25˚C

TA - AMBIENT TEMPERATURE (˚C)

NORMALIZED ICER - OUTPUT CURRENT

Fig.4 Normalized Output Current vs. Temperature

-60 -40 -20 0 20 40 60 80 100

0.1

Normalized to:

VCE = 10 V

IF = 10 mA

RBE = 106 Ω

TA = 25˚C

IF = 10 mA

IF = 5 mA

IF = 20 mA

TA - AMBIENT TEMPERATURE (˚C)

NORMALIZED ICBO - COLLECTOR-BASE CURRENT

Normalized Collector-Base Current vs. Temperature

-60 -40 -20 0 20 40 60 80 100

Normalized to:

VCE = 10 V

IF = 10 mA

RBE = 106 Ω

TA = 25˚C

IF = 50 mA

IF = 10 mA

IF = 5 mA

Fig.5 Normalized Dark Current vs. Ambient Temperature

10 20 30 40 50 60 70 80 90 100 110

0.1

100

1000

10000

VCE = 300 V

VCE = 100 V

VCE = 50 V

Normalized to:

VCE = 100 V

RBE = 106 Ω

TA = 25˚C

8/9/00 200046A

H11D1, H11D2, H11D3, H11D4, 4N38

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

Lead Coplanarity : 0.004 (0.10) MAX

0.270 (6.86)

0.240 (6.10)

0.350 (8.89)

0.330 (8.38)

0.300 (7.62)

TYP

0.405 (10.30)

MAX

0.315 (8.00)

MIN

0.016 (0.40) MI N

PIN 1

ID.

0.016 (0.41)

0.008 (0.20)

0.100 (2.54)

TYP

0.022 (0.56)

0.016 (0.41)

0.070 (1.78)

0.045 (1.14)

0.200 (5.08)

0.165 (4.18)

0.020 (0.51)

MIN

0.100 (2.54)

TYP

0.020 (0.51)

MIN

0.350 (8.89)

0.330 (8.38)

0.270 (6.86)

0.240 (6.10)

PIN 1

ID.

0.022 (0.56)

0.016 (0.41)

0.070 (1.78)

0.045 (1.14)

0.200 (5.08)

0.135 (3.43)

0.300 (7.62)

TYP

0° to 15°

0.154 (3.90)

0.100 (2.54)

SEATING PLANE

0.016 (0.40)

0.008 (0.20)

321

456

SEATING PLANE

0.016 (0.40)

0.008 (0.20)

0.070 (1.78)

0.045 (1.14)

0.350 (8.89)

0.330 (8.38)

0.154 (3.90)

0.100 (2.54)

0.200 (5.08)

0.135 (3.43)

0.004 (0.10)

MIN

0.270 (6.86)

0.240 (6.10)

0.400 (10.16)

TYP

0° to 15°

0.022 (0.56)

0.016 (0.41) 0.100 (2.54) TYP

PIN 1

ID.

456

NOTE

All dimensions are in inches (millimeters)

0.070 (1.78)

0.060 (1.52)

0.030 (0.76)

0.100 (2.54)

0.295 (7.49)

0.415 (10.54)

Packa ge Dimensions (Surface Mount)Packa ge Dimensions (Thr ough Hole)

Packa ge Dimensions (0.4”Lead Spacing) Recommended Pad Layout for

Surface Mount Leadform

8/9/00 200046A

H11D1, H11D2, H11D3, H11D4, 4N38

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

S .S Surface Mount Lead Bend

SD .SD Surface Mount; Tape and reel

W .W 0.4” Lead Spacing

300 .300 VDE 0884

300W .300W VDE 0884, 0.4” Lead Spacing

3S .3S VDE 0884, Surface Mount

3SD .3SD VDE 0884, Surface Mount, Tape & Reel

Option Order Entry Identifier Description

4.0 ± 0.1

Ø1.55 ± 0.05

User Direction of Feed

4.0 ± 0.1

1.75 ± 0.10

7.5 ± 0.1

16.0 ± 0.3

12.0 ± 0.1

0.30 ± 0.05

13.2 ± 0.2

4.85 ± 0.20

0.1 MAX 10.30 ± 0.20

9.55 ± 0.20

Ø1.6 ± 0.1

QT Carrier Tape Specifications (“D” Taping Orientation)

ORDERING INFORMATION

NOTE

All dimensions are in millimeters

8/9/00 200046A

H11D1, H11D2, H11D3, H11D4, 4N38

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

MARKING INFORMATION

Reﬂow Proﬁle (Black Package, No Sufﬁx)

H11D1

V XX YY K

43 5

Deﬁnitions

1 Fairchild logo

2 Device number

3VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table)

4 Two digit year code, e.g., ‘03’

5 Two digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

• Peak reflow temperature: 225° C (package surface temperature)

• Time of temperature higher than 183° C for 60–150 seconds

• One time soldering reflow is recommended

215°C, 10–30 s

225 C peak

Time (Minute)

300

250

200

150

100

0.5 1 1.5 2 2.5 3 3.5 4 4.5

Temperature (°C)

Time above 183° C, 60–150 sec

Ramp up = 3 C/sec

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY

ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT

CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

MSXPro™

OCX™

OCXPro™

OPTOLOGIC

OPTOPLANAR™

PACMAN™

POP™

FAST

FASTr™

FPS™

FRFET™

GlobalOptoisolator™

GTO™

HiSeC™

I2C™

i-Lo™

ImpliedDisconnect™

Rev. I13

ACEx™

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E2CMOS™

EnSigna™

FACT™

FACT Quiet Series™

Power247™

PowerEdge™

PowerSaver™

PowerTrench

QFET

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

µSerDes™

SILENT SWITCHER

SMART START™

SPM™

Stealth™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic

TINYOPTO™

TruTranslation™

UHC™

UltraFET

VCX™

Across the board. Around the world.™

The Power Franchise

Programmable Active Droop™