Semiconductor Group 3
BCP 54
... BCP 56
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
VCollector-emitter breakdown voltage
C = 10 mA, IB = 0 BCP 54
BCP 55
BCP 56
V(BR)CE0 45
60
80
–
–
–
–
–
–
nA
µA
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 150 ˚C
ICB0 –
––
–100
20
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage1)
C = 100 µA, IB = 0 BCP 54
BCP 55
BCP 56
V(BR)CB0 45
60
100
–
–
–
–
–
–
Emitter-base breakdown voltage
E = 10 µA, IC = 0 V(BR)EB0 5––
V
Collector-emitter saturation voltage1)
C = 500 mA, IB = 50 mA VCEsat – – 0.5
–DC current gain
C = 5 mA, VCE = 2 V
C = 150 mA, VCE = 2 V
BCP 54/BCP 55/BCP 56
BCP 54/BCP 55/BCP 56-10
BCP 54/BCP 55/BCP 56-16
C = 500 mA, VCE = 2 V
hFE 25
40
63
100
25
–
–
100
160
–
–
250
160
250
–
Base-emitter voltage1)
C = 500 mA, VCE = 2 V VBE ––1
µAEmitter-base cutoff current
VEB = 5 V IEB0 ––10
MHzTransition frequency
C = 50 mA, VCE = 10 V, f = 100 MHz fT– 100 –
AC characteristics
1) Pulse test conditions: t≤300 µs, D = 2 %.