BSR19A,215 - NXP - Pdf.Support

DATA SH EET

Product data sheet

Supersedes data of 2004 Jan 13 2004 Mar 15

DISCRETE SEMICONDUCTORS

BSR19; BSR19A

NPN high voltage transistors

2004 Mar 15 2

NXP Semiconductors Product data sheet

NPN high voltage transistors BSR19; BSR19A

FEATURES

•Low current (ma x. 300 mA)

•High voltage (max. 160 V).

APPLICATIONS

•General purpose switc hing and amplification

•Especially used for te lephony applications.

DESCRIPTION

NPN high-voltage transistor in a SOT23 plastic package.

PNP complements: BSR20 and BSR20A.

MARKING

Note

1. * = p : Made in Hong Kong .

* = t : Made in Malaysia.

* = W : Made in China.

PINNING

TYPE NUMBER MARKING CODE(1)

BSR19 56* or U35

BSR19A 57* or U36

PIN DESCRIPTION

1base

2emitter

3collector

Fig.1 Simplified outline (SOT23 ) and symbo l .

handbook, halfpage

MAM255

Top view

ORDERING INFORMATION

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

BSR19 −plastic surface mounted packag e; 3 leads SOT23

BSR19A −plastic surface mounted packag e; 3 leads SOT23

2004 Mar 15 3

NXP Semiconductors Pr oduct data sheet

NPN high voltage transistors BSR19; BSR19A

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with th e A bsolute Max i mum Rating Sys tem (IEC 60134).

THERMAL CHARACTE RISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter

BSR19 −160 V

BSR19A −180 V

VCEO collector-emitter voltage open base

BSR19 −140 V

BSR19A −160 V

ICM peak collector current −600 mA

Ptot total power dissipation Tamb ≤ 25 °C−250 mW

hFE DC current gain IC = 10 mA; VCE = 5 V

BSR19 60 −

BSR19A 80 −

fTtransition freque ncy IC = 10 mA; VCE = 10 V; f = 100 MHz 100 300 MHz

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter

BSR19 −160 V

BSR19A −180 V

VCEO collector-emitter voltage open base

BSR19 −140 V

BSR19A −160 V

VEBO emitter-base voltage open collector −6 V

ICcollector current (DC) −300 mA

ICM peak collector current −600 mA

IBbase current (DC) −100 mA

Ptot total power dissipation Tamb ≤ 25 °C−250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W

2004 Mar 15 4

NXP Semiconductors Pr oduct data sheet

NPN high voltage transistors BSR19; BSR19A

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector cut-off current

BSR19 IE = 0 A; VCB = 100 V −100 nA

IE = 0 A; VCB = 100 V; Tamb = 100 °C−100 µA

ICBO collector cut-off current

BSR19A IE = 0 A; VCB = 120 V −50 nA

IE = 0 A; VCB = 120 V; Tamb = 100 °C−50 µA

IEBO emitter cut-off current IC = 0 A; VEB = 4 V −50 nA

hFE DC current gain IC = 1 mA; VCE = 5 V

BSR19 60 −

BSR19A 80 −

DC current gain IC = 10 mA; VCE = 5 V

BSR19 60 250

BSR19A 80 250

DC current gain IC = 50 mA; VCE = 5 V

BSR19 20 −

BSR19A 30 −

VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 1 mA −150 mV

VCEsat collector-emitter saturation voltage IC = 50 mA; IB = 5 mA

BSR19 −250 mV

BSR19A −200 mV

Cccollector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz −6pF

fTtransition freque ncy IC = 10 mA; VCE = 10 V; f = 100 MHz 100 300 MHz

2004 Mar 15 5

NXP Semiconductors Pr oduct data sheet

NPN high voltage transistors BSR19; BSR19A

handbook, full pagewidth

120

160

MGD814

10−111010

2103

hFE

IC mA

VCE = 5 V

Fig.2 DC current gain; typical values.

2004 Mar 15 6

NXP Semiconductors Pr oduct data sheet

NPN high voltage transistors BSR19; BSR19A

PACKAGE OUTLINE

UNIT A

max. b

cDE e

Qwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT2

2004 Mar 15 7

NXP Semiconductors Pr oduct data sheet

NPN high voltage transistors BSR19; BSR19A

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document befor e initiating or completing a design.

2. The product s ta tus of device(s ) described in this do cument may have ch anged since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such informa tion.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereo f.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict between information

in this document an d such terms and conditio ns, the latter

will prevail.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, c onveyance or

implication of any license under any copyrights, patents or

other industr i al or inte llectual property rights.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

Contact information

For additional information p lease visit: http://www.nxp.com

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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information pr e sent ed in this document does not fo rm p art o f an y q uot ation or co ntract, is believed to be accurate a nd reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or in tellectual property rights.

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package o utline

drawings which were updated to the latest version.

Printed in The Netherlands R75/04/pp8 Date of release: 2004 Mar 15 Document orde r number: 9397 750 12911