PDE-N1200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN1200GR12A [Rated 1200A/1200V, Single-pack type] OUTLINE DRAWING * Low saturation voltage and high speed. * Low turn-OFF switching loss. * Low noise due to built-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) * High reliability structure. * Isolated heat sink (terminals to base). Unit in mm 130 110 4-6.5 E G 46.75 CIRCUIT DIAGRAM E C 13 19 36 2-M8 (8) 37 E G 30 C 44 E 130 19.5 27.5 2-M4 110 FEATURES Weight1300g ABSOLUTE MAXIMUM RATINGS (TC=25C) Item Symbol Collector-Emitter Voltage VCES Gate-Emitter Voltage VGES DC IC Collector Current 1ms ICP DC IF Forward Current 1ms IFM Collector Power Dissipation PC Junction Temperature Tj Storage Temperature Tstg Isolation Voltage Viso Terminals(M4/M8) Screw Torque Mounting Notes; *1 : RMS current of diode 360 Arms *2 : Recommended value 1.18 / 7.35 N*m *3 : Recommended value 2.45 N*m Unit V V A Value 1200 20 1200 2400 *1 A W C C VRMS N*m 1200 2400 8330 -40 ~ +150 -40 ~ +125 2500(AC 1 minute) 1.37 / 7.84 *3 2.94 *2 CHARACTERISTICS (TC=25C) Item Symbol Unit Min. Typ. Max. Test Conditions Collector-Emitter Cut-Off Current ICES mA 1.0 VCE=1200V, VGE=0V Gate-Emitter Leakage Current IGES nA 500 VGE=20V, VCE=0V Collector-Emitter Saturation Voltage VCE(sat) V 2.4 3.0 IC=1200A, VGE=15V Gate-Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC=1200mA Input Capacitance Cies nF 108 VCE=10V, VGE=0V, f=1MHz Rise Time tr 0.6 1.5 VCC=600V, IC=1200A *4 Turn-On Time ton 0.8 2.1 R G=3.3 Switching Times s Fall Time tf 0.2 0.4 VGE=15V Inductive Load Turn-Off Time toff 1.4 1.8 Peak Forward Voltage Drop VFM V 2.5 3.7 IF=1200A, VGE=0V Reverse Recovery Time trr 0.5 s IF=1200A, VGE=-10V,di/dt=1200A/s IGBT Rth(j-c) 0.015 Thermal Impedance Junction to case C/W FWD Rth(j-c) 0.035 Notes; *4 : RG value is the test condition's value for decision of the switching times, not recommended value, please determine the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. Remark; For actual application,please confirm this spec.sheet is the newest revision. http://store.iiic.cc/ VGE=15V 14V13V12V 2400 2400 2000 11V 1800 1600 Pc=8330W 1400 1200 1000 10V 800 600 11V 1800 Collector Current, Ic (A) Collector Current, Ic (A) 2000 1600 1400 1200 10V 1000 800 600 400 9V 400 9V 200 200 0 0 0 2 4 6 8 10 0 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage Collector to Emitter Voltage, VCE (V) 6 4 Ic=2400A Ic=1200A 2 4 6 8 10 TYPICAL 10 Tc=25C 8 2 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage TYPICAL 10 Collector to Emitter Voltage, VCE (V) TYPICAL Tc=125C 2200 2200 Tc=125C 8 6 Ic=2400A 4 Ic=1200A 2 0 0 0 5 10 15 20 0 Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage 5 10 15 20 Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage TYPICAL 20 TYPICAL 2400 Vcc=600V Ic =1200A Tc=25C VGE=0V Tc=25C Tc=125C 2200 2000 15 Forward Current, IF (A) Gate to Emitter Voltage, VGE (V) VGE=15V 14V13V12V TYPICAL Tc=25C 10 1800 1600 1400 1200 1000 5 800 600 400 200 0 0 2400 4800 7200 9600 12000 Gate Charge, QG (nC) Gate charge characteristics 0 0 1 2 3 4 5 Forward Voltage, VF (V) Forward voltage of free-wheeling diode PDE-N1200GR12A-0 http://store.iiic.cc/ TYPICAL TYPICAL 1000 Vcc=600V VGE=15V RG=3.3 TC=125C Inductive Load 350 300 Etoff 250 200 150 100 Eton 50 Err Switching Loss, Eton, Etoff, Err (mJ/pulse) Switching Loss, Eton,Etoff, Err (mJ/pulse) 400 Vcc=600V Etoff VGE=15V Eton IC=1200A TC=125C Inductive Load 100 Err 10 0 1 0 200 400 600 800 1000 1200 1400 1 100 1 Transient Thermal Impedance, Rth(j-c) (C/W) 10000 Collector Current, Ic (A) 10 Gate Resistance. RG () Switching loss vs. Gate resistance Collector Current. IC (A) Switching loss vs. Collector current VGE=15V RG=3.3 TC125C 1000 100 10 1 0 200 400 600 800 1000 1200 1400 0.1 Diode IGBT 0.01 0.001 0.001 0.01 0.1 1 10 Time, t (s) Transient thermal impedance Collector to Emitter Voltage, VCE (V) Reverse biased safe operating area PDE-N1200GR12A-0 http://store.iiic.cc/ HITACHI POWER SEMICONDUCTORS Notices 1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. 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